YQ5LAM10DTF Series

Trench MOS Structure, 100V, 5A, PMDTM, Highly Efficient SBD for Automotive

Catalog

Trench MOS Structure, 100V, 5A, PMDTM, Highly Efficient SBD for Automotive

Part	Current - Reverse Leakage @ Vr	Technology	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Grade	Operating Temperature - Junction	Current - Average Rectified (Io)	Package / Case	Qualification	Capacitance @ Vr, F
Rohm Semiconductor YQ5LAM10DTFTR	30 µA	Schottky	200 mA, 500 ns	100 V	PMDTM	730 mV	Surface Mount	Automotive	175 °C	5 A	SOD-128	AEC-Q101	140 pF

Catalog

Trench MOS Structure, 100V, 5A, PMDTM, Highly Efficient SBD for Automotive

Key Features

• High reliability, Small power mold type, Low VFand low IR, Low capacitance

Description

The YQ5LAM10DTF is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VFand low IR. While its low VFit achieves stable operation at high temperatures. Ideal for switching power supplies, freewheel diodes, and reverse polarity protection applications.