MOSFET N-CH 20V 85A TO220AB
| Part | Mounting Type | Power Dissipation (Max) [Max] | Package / Case | Operating Temperature [Min] | Operating Temperature [Max] | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds | FET Type | Supplier Device Package | Vgs (Max) | Technology | Gate Charge (Qg) (Max) @ Vgs [Max] | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay Siliconix SUP85N02-03-E3 | Through Hole | 250 W | TO-220-3 | -55 °C | 175 ░C | 3 mOhm | 20 V | 85 A | 450 mV | 2.5 V, 4.5 V | 21250 pF | N-Channel | TO-220AB | 8 V | MOSFET (Metal Oxide) | ||
Vishay Siliconix SUP85N15-21-E3 | Through Hole | TO-220-3 | -55 °C | 175 ░C | 21 mOhm | 150 V | 85 A | 4 V | 10 V | 4750 pF | N-Channel | TO-220AB | 20 V | MOSFET (Metal Oxide) | 110 nC | 2.4 W, 300 W | |
Vishay Siliconix SUP85N10-10-GE3 | Through Hole | TO-220-3 | -55 °C | 175 ░C | 10.5 mOhm | 100 V | 85 A | 3 V | 4.5 V, 10 V | N-Channel | 20 V | MOSFET (Metal Oxide) | 160 nC | 3.75 W, 250 W | |||
Vishay Siliconix SUP85N04-03-E3 | Through Hole | TO-220-3 | -55 °C | 175 ░C | 3.5 mOhm | 40 V | 85 A | 3 V | 4.5 V, 10 V | 6860 pF | N-Channel | TO-220AB | 20 V | MOSFET (Metal Oxide) | 3.75 W, 250 W | ||
Vishay Siliconix SUP85N03-04P-E3 | Through Hole | TO-220-3 | -55 °C | 175 ░C | 4.3 mOhm | 30 V | 85 A | 3 V | 4.5 V, 10 V | 4500 pF | N-Channel | TO-220AB | 20 V | MOSFET (Metal Oxide) | 90 nC | 3.75 W, 166 W |