POWER MOSFET, N CHANNEL, 30 V, 21 A, 0.003 OHM, SOIC, SURFACE MOUNT
| Part | FET Type | Supplier Device Package | Mounting Type | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs [Max] | Package / Case | Package / Case [y] | Package / Case [x] | Vgs (Max) | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Technology | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | N-Channel | 8-SO | Surface Mount | 30 V | 2.35 V | -55 °C | 150 °C | 21 A | 45 nC | 8-SOIC | 3.9 mm | 0.154 in | 20 V | 2.5 W | 3.7 mOhm | MOSFET (Metal Oxide) | 4.5 V 10 V | 4090 pF |