POWER MOSFET, N CHANNEL, 21 A, 600 V, 0.15 OHM, 10 V, 3 V ROHS COMPLIANT: YES
| Part | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Drain to Source Voltage (Vdss) | Package / Case | Rds On (Max) @ Id, Vgs | Mounting Type | Gate Charge (Qg) (Max) @ Vgs | Power Dissipation (Max) | Technology | Operating Temperature [Min] | Operating Temperature [Max] | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 3.5 V | 21 A | 20 V | 600 V | TO-220-3 | 165 mOhm | Through Hole | 52 nC | 192 W | MOSFET (Metal Oxide) | -55 °C | 150 °C | 10 V | PG-TO220-3 | 2000 pF | N-Channel |