SIC 1200V 40M MOSFET SOT-227
| Part | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id | Technology | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Package / Case | FET Type | Operating Temperature [Min] | Operating Temperature [Max] | Gate Charge (Qg) (Max) @ Vgs | Mounting Type | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) [Min] | Vgs (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
SemiQ GCMX040B120S1-E1 | 242 W | 3185 pF | 4 V | SiC (Silicon Carbide Junction Transistor) | 1200 V | 52 mOhm | SOT-227-4, miniBLOC | N-Channel | -55 °C | 175 ░C | 121 nC | Chassis Mount | SOT-227 | 57 A | -10 V | 25 V |