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Dual N-Channel Enhancement Mode MOSFET
Description
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This MOSFET has been designed to minimize the on-state resistance
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Dual N-Channel Enhancement Mode MOSFET
Dual N-Channel Enhancement Mode MOSFET
| Part | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Technology | Operating Temperature [Min] | Operating Temperature [Max] | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | FET Type | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs [Max] | Mounting Type | Package / Case | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | FET Feature | Power - Max [Max] | Gate Charge (Qg) (Max) @ Vgs | Configuration |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | 532 pF | 20 V | 12 V | 5.9 A | MOSFET (Metal Oxide) | -55 °C | 150 °C | 29 mOhm | 1.4 V | N-Channel | SOT-23-3 | 6.7 nC | Surface Mount | SC-59 SOT-23-3 TO-236-3 | 1.4 W | 2 V | 4.5 V | ||||
Diodes Inc | 389 pF | 20 V | 3.3 A | MOSFET (Metal Oxide) | -55 °C | 150 °C | 45 mOhm | 1 V | U-DFN2020-6 (Type B) | Surface Mount | 6-UDFN Exposed Pad | Logic Level Gate | 730 mW | 12 nC | 2 N-Channel (Dual) |