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20 V, P-channel Trench MOSFET
Description
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P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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20 V, P-channel Trench MOSFET
20 V, P-channel Trench MOSFET
| Part | Qualification | Vgs(th) (Max) | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Grade | Gate Charge (Max) | Mounting Type | Drive Voltage (Max Rds On) | Drive Voltage (Min Rds On) | Rds On (Max) | Technology | Input Capacitance (Ciss) (Max) | Package Name | Package / Case | FET Type | Current - Continuous Drain (Id) (Ta) | Vgs (Max) | Operating Temperature (Min) | Operating Temperature (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | AEC-Q101 | 1.3 V | 20 V | 7.5 W 660 mW | Automotive | 16 nC | Surface Mount | 2.5 V | 8 V | 46 mOhm | MOSFET (Metal Oxide) | 1025 pF | 6-TSOP | SC-74 SOT-457 | P-Channel | 4.7 A | 12 V | -55 °C | 175 °C |