SI9926 Series

Catalog

MOSFET 2N-CH 20V 8A 8SOIC

Part	Rds On (Max)	Channel Count	Configuration	Configuration - Features	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max)	Package Length	Package Name	Package Width	FET Feature	Current - Continuous Drain (Id)	Technology	Vgs(th) (Max)	Gate Charge (Max)	Power - Max	Mounting Type	Operating Temperature (Min)	Operating Temperature (Max)
Vishay Dale SI9926CDY-T1-E3	18 mOhm	2	N-Channel	Dual	20 V	1200 pF	0.154 in	8-SOIC	3.9 mm	Logic Level Gate	8 A	MOSFET (Metal Oxide)	1.5 V	33 nC	3.1 W	Surface Mount	-55 °C	150 °C
Vishay Dale SI9926BDY-T1-GE3	20 mOhm	2	N-Channel	Dual	20 V		0.154 in	8-SOIC	3.9 mm	Logic Level Gate	6.2 A	MOSFET (Metal Oxide)	1.5 V	20 nC	1.14 W	Surface Mount	-55 °C	150 °C
Vishay Dale SI9926BDY-T1-E3	20 mOhm	2	N-Channel	Dual	20 V		0.154 in	8-SOIC	3.9 mm	Logic Level Gate	6.2 A	MOSFET (Metal Oxide)	1.5 V	20 nC	1.14 W	Surface Mount	-55 °C	150 °C
Vishay Dale SI9926CDY-T1-GE3	18 mOhm	2	N-Channel	Dual	20 V	1200 pF	0.154 in	8-SOIC	3.9 mm	Logic Level Gate	8 A	MOSFET (Metal Oxide)	1.5 V	33 nC	3.1 W	Surface Mount	-55 °C	150 °C