Catalog
Complementary Pair Enhancement Mode MOSFET
Description
AI
This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP.
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Complementary Pair Enhancement Mode MOSFET
Complementary Pair Enhancement Mode MOSFET
| Part | Power - Max [Max] | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Qualification | Package / Case | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | Grade | Operating Temperature [Min] | Operating Temperature [Max] | Rds On (Max) @ Id, Vgs | Configuration | Mounting Type | Technology | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | 580 mW | 1.25 V 2.5 V | 2.9 A 390 mA | 0.4 pC 7.3 nC | AEC-Q101 | 6-UDFN Exposed Pad | 41 pF 443 pF | 20 V 60 V | Automotive | -55 °C | 150 °C | 0.072 Ohm 4 Ohm | N and P-Channel Complementary | Surface Mount | MOSFET (Metal Oxide) | U-DFN2020-6 (Type B) |