IMZA65R015 Series
Manufacturer: INFINEON
Beta
⌘K
SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 103 A, 650 V, 0.0132 OHM, TO-247
| Part | Package Name | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Power Dissipation (Max) | Gate Charge (Max) | Rds On (Max) | Package / Case | Drain to Source Voltage (Vdss) | Mounting Type | Technology | Vgs (Max) Positive | Vgs (Max) Negative | Current - Continuous Drain (Id) (Tc) | Operating Temperature (Min) | Operating Temperature (Max) | Vgs(th) (Max) | FET Type | Input Capacitance (Ciss) (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 INFINEON | PG-TO247-4-8 | 20 V | 15 V | 341 W | 79 nC | 13.2 mOhm | TO-247-4 | 650 V | Through Hole | SiC (Silicon Carbide Junction Transistor) SiCFET (Silicon Carbide) | 23 V | -7 V | 103 A | -55 °C | 175 °C | 5.6 V | N-Channel | 2792 pF |