IR MOSFET™ N-CHANNEL POWER MOSFET ; I2PAK TO-262 PACKAGE; 2.5 MOHM;
| Part | Supplier Device Package | Rds On (Max) @ Id, Vgs | Vgs (Max) | FET Type | Mounting Type | Power Dissipation (Max) [Max] | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Technology | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | TO-262 | 2.5 mOhm | 20 V | N-Channel | Through Hole | 375 W | 60 V | -55 °C | 175 ░C | 4 V | 195 A | MOSFET (Metal Oxide) | 10 V | I2PAK TO-262-3 Long Leads TO-262AA | 8970 pF | 300 nC |