Catalog
30 V, P-channel Trench MOSFET
Description
AI
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Beta
⌘K
30 V, P-channel Trench MOSFET
30 V, P-channel Trench MOSFET
| Part | Grade | Vgs(th) (Max) | Drain to Source Voltage (Vdss) | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Package Name | Gate Charge (Max) | Qualification | Mounting Type | Operating Temperature (Min) | Operating Temperature (Max) | Technology | Power Dissipation (Max) | Rds On (Max) | FET Type | Input Capacitance (Ciss) (Max) | Current - Continuous Drain (Id) (Ta) | Package / Case | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | Automotive | 3 V | 30 V | 10 V | 4.5 V | TO-236AB | 19.2 nC | AEC-Q101 | Surface Mount | -55 °C | 150 °C | MOSFET (Metal Oxide) | 310 mW 455 mW | 45 mOhm | P-Channel | 793 pF | 4.2 A | SC-59 SOT-23-3 TO-236-3 | 20 V |