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30 V, N-channel Trench MOSFET
Description
AI
N-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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30 V, N-channel Trench MOSFET
30 V, N-channel Trench MOSFET
| Part | Package / Case | Input Capacitance (Ciss) (Max) | Mounting Type | Vgs (Max) | Gate Charge (Max) | Package Name | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Drain to Source Voltage (Vdss) | Operating Temperature (Min) | Operating Temperature (Max) | Rds On (Max) | FET Type | Vgs(th) (Max) | Power Dissipation (Max) | Technology | Current - Continuous Drain (Id) (Ta) | Current - Continuous Drain (Id) (Tc) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 8-PowerVDFN | 2100 pF | Surface Mount | 20 V | 46.2 nC | MLPAK33 | 10 V | 4.5 V | 30 V | -55 °C | 150 °C | 4.7 mOhm | N-Channel | 2.5 V | 1.8 W 42 W | MOSFET (Metal Oxide) | 15 A | 74 A |