IMW65R015 Series
Manufacturer: INFINEON
Beta
⌘K
SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 93 A, 650 V, 0.0132 OHM, TO-247
| Part | Package / Case | FET Type | Package Name | Mounting Type | Technology | Input Capacitance (Ciss) (Max) | Drain to Source Voltage (Vdss) | Vgs(th) (Max) | Power Dissipation (Max) | Rds On (Max) | Vgs (Max) Positive | Vgs (Max) Negative | Gate Charge (Max) | Operating Temperature (Min) | Operating Temperature (Max) | Current - Continuous Drain (Id) (Tc) | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 INFINEON | TO-247-3 | N-Channel | PG-TO247-3-40 | Through Hole | SiC (Silicon Carbide Junction Transistor) SiCFET (Silicon Carbide) | 2792 pF | 650 V | 5.6 V | 341 W | 13.2 mOhm | 23 V | -7 V | 79 nC | -55 °C | 175 °C | 93 A | 20 V | 15 V |