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IR MOSFET™ N-CHANNEL POWER MOSFET ; SO-8 PACKAGE; 30 MOHM;
| Part | Mounting Type | Vgs (Max) | Technology | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs [Max] | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | FET Type | Package / Case | Package / Case [y] | Package / Case [x] | Rds On (Max) @ Id, Vgs | Operating Temperature [Min] | Operating Temperature [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | Surface Mount | 20 V | MOSFET (Metal Oxide) | 30 V | 1 V | 7.3 A | 4.5 V 10 V | 28 nC | 8-SO | 550 pF | 2.5 W | N-Channel | 8-SOIC | 3.9 mm | 0.154 in | 30 mOhm | -55 °C | 150 °C |