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25 V, N-channel Trench MOSFET
Description
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N-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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25 V, N-channel Trench MOSFET
25 V, N-channel Trench MOSFET
| Part | Vgs (Max) | Vgs(th) (Max) | Input Capacitance (Ciss) (Max) | Rds On (Max) | Package / Case | Gate Charge (Max) | Current - Continuous Drain (Id) (Tc) | Current - Continuous Drain (Id) (Ta) | Technology | Power Dissipation (Max) | Package Name | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Drain to Source Voltage (Vdss) | Mounting Type | Operating Temperature (Min) | Operating Temperature (Max) | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 20 V | 2.2 V | 770 pF | 7.7 mOhm | 8-PowerVDFN | 16.6 nC | 32 A | 11.8 A | MOSFET (Metal Oxide) | 1.7 W 12.5 W | MLPAK33 | 10 V | 4.5 V | 25 V | Surface Mount | -55 °C | 150 °C | N-Channel |