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P-Channel Enhancement Mode MOSFET
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P-Channel Enhancement Mode MOSFET
P-Channel Enhancement Mode MOSFET
| Part | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Package / Case | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | Technology | Power Dissipation (Max) | Vgs (Max) | FET Type | Gate Charge (Qg) (Max) @ Vgs | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | 20 V | 214 pF | 1 V | 2.5 A | DFN2015H4-3 | 3-XFDFN | Surface Mount | -55 °C | 150 °C | MOSFET (Metal Oxide) | 530 mW | 8 V | P-Channel | 9.1 nC | 54 mOhm | 1.8 V 4.5 V |