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20 V, P-channel Trench MOSFET
Description
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P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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20 V, P-channel Trench MOSFET
20 V, P-channel Trench MOSFET
| Part | Rds On (Max) | Drive Voltage (Max Rds On) | Drive Voltage (Min Rds On) | Power Dissipation (Max) | Operating Temperature (Min) | Operating Temperature (Max) | Package Name | Vgs (Max) | Gate Charge (Max) | Technology | Mounting Type | Vgs(th) (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) (Ta) | Input Capacitance (Ciss) (Max) | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 90 mOhm | 2.5 V | 4.5 V | 2.1 W 340 mW | -55 °C | 150 °C | TO-236AB | 8 V | 6.3 nC | MOSFET (Metal Oxide) | Surface Mount | 1 V | P-Channel | 20 V | 1.8 A | 330 pF | SC-59 SOT-23-3 TO-236-3 |