Beta
⌘K
IR MOSFET™ N-CHANNEL POWER MOSFET ; DIRECTFET™ L PACKAGE; 11 MOHM;
| Part | Rds On (Max) @ Id, Vgs | Package / Case | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Technology | Mounting Type | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) @ 25°C | FET Type | Vgs(th) (Max) @ Id | Operating Temperature [Min] | Operating Temperature [Max] | Vgs (Max) | Power Dissipation (Max) | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 11 mOhm | DirectFET™ Isometric L8 | 6660 pF | 150 nC | MOSFET (Metal Oxide) | Surface Mount | 150 V | 10 V | 67 A | N-Channel | 5 V | -55 °C | 175 ░C | 20 V | 3.3 W 125 W | DirectFET™ Isometric L8 |