IXTT220 Series

Discrete MOSFET 220A 200V X4 TO268HV

Catalog

Discrete MOSFET 220A 200V X4 TO268HV

Part	Current - Continuous Drain (Id) (Tc)	Mounting Type	Input Capacitance (Ciss) (Max)	FET Type	Vgs (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Vgs(th) (Max)	Gate Charge (Max)	Drain to Source Voltage (Vdss)	Technology	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Package Name	Package / Case	Rds On (Max)
LITTELFUSE IXTT220N20X4HV	220 A	Surface Mount	12300 pF	N-Channel	20 V	-55 °C	175 °C	4.5 V	157 nC	200 V	MOSFET (Metal Oxide)	10 V	800 W	TO-268HV (IXTT)	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA	5.5 mOhm
LITTELFUSE IXTT220N20X4HV	220 A	Surface Mount	12300 pF	N-Channel	20 V	-55 °C	175 °C	4.5 V	157 nC	200 V	MOSFET (Metal Oxide)	10 V	800 W	TO-268HV (IXTT)	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA	5.5 mOhm

Catalog

Discrete MOSFET 220A 200V X4 TO268HV

Description

The new 200V X4 Ultra Junction MOSFETs are designed with the latest Ultra Junction technology for high efficiency power applications. They are available in TO-247 and TO-268HV Packages. They offer lower RDS(on) simultaneously with reduced gate and output charges, which allows for more efficient switching at given frequency.