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60 V, N-channel Trench MOSFET
Description
AI
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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60 V, N-channel Trench MOSFET
60 V, N-channel Trench MOSFET
| Part | Current - Continuous Drain (Id) (Ta) | Qualification | Grade | Package Name | Power Dissipation (Max) | Gate Charge (Max) | Vgs(th) (Max) | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Drain to Source Voltage (Vdss) | FET Type | Operating Temperature (Min) | Operating Temperature (Max) | Mounting Type | Input Capacitance (Ciss) (Max) | Technology | Rds On (Max) | Package / Case | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 350 mA | AEC-Q101 | Automotive | SOT-883 | 3.1 W 710 mW | 315 pC | 1.5 V | 10 V | 2.5 V | 60 V | N-Channel | -55 °C | 150 °C | Surface Mount | 9 pF | MOSFET (Metal Oxide) | 3 Ohm | SC-101 SOT-883 | 20 V |