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80 V, P-channel Trench MOSFET
Description
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P-channel enhancement mode Field-Effect Transistor (FET) in an LFPAK56 (Power SO8) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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80 V, P-channel Trench MOSFET
80 V, P-channel Trench MOSFET
| Part | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Current - Continuous Drain (Id) (Tc) | Power Dissipation (Max) | Gate Charge (Max) | Rds On (Max) | Qualification | Package / Case | Mounting Type | Drain to Source Voltage (Vdss) | Package Name | Grade | Operating Temperature (Min) | Operating Temperature (Max) | FET Type | Input Capacitance (Ciss) (Max) | Technology | Vgs(th) (Max) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 10 V | 4.5 V | 35 A | 150 W | 60 nC | 55 mOhm | AEC-Q101 | SC-100 SOT-669 | Surface Mount | 80 V | LFPAK56 Power-SO8 | Automotive | -55 °C | 175 °C | P-Channel | 2217 pF 2217 pF | MOSFET (Metal Oxide) | 2.8 V | 20 V |