Catalog
1200V, 20A, THD, Silicon-carbide (SiC) SBD
Description
AI
Switching loss reduced, enabling high-speed switching . (2-pin package)
Beta
⌘K
1200V, 20A, THD, Silicon-carbide (SiC) SBD
1200V, 20A, THD, Silicon-carbide (SiC) SBD
| Part | Speed - Fast Recovery (Minimum) | Speed | Speed - Recovery Current | Current - Average Rectified (Io) | Package / Case | Package Name | Current - Reverse Leakage | Reverse Recovery Time (trr) | Mounting Type | Technology | Voltage - DC Reverse (Vr) (Max) | Capacitance | Voltage - Forward (Vf) (Max) | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | 500 mA | No Recovery Time | 500 mA 500 mA | 20 A | TO-220-2 | TO-220ACFP | 400 µA | 0 ns | Through Hole | SiC (Silicon Carbide) Schottky | 1200 V | 1050 pF | 1.6 V | 175 °C |