MOSFET N/P-CH 30V 5.8A/4.3A 8SO
| Part | Technology | Package / Case | Package / Case [y] | Package / Case [x] | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Power - Max [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Configuration | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Mounting Type | FET Feature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | MOSFET (Metal Oxide) | 8-SOIC | 3.9 mm | 0.154 in | 8-SO | 25 nC | 1 V | 30 V | 2.5 W | -55 °C | 150 °C | N and P-Channel | 520 pF | 4.3 A 5.8 A | Surface Mount | |
Infineon Technologies | MOSFET (Metal Oxide) | 8-SOIC | 3.9 mm | 0.154 in | 8-SO | 25 nC | 1 V | 30 V | 2.5 W | -55 °C | 150 °C | N and P-Channel | 520 pF | 4.3 A 5.8 A | Surface Mount | |
Infineon Technologies | MOSFET (Metal Oxide) | 8-SOIC | 3.9 mm | 0.154 in | 8-SO | 25 nC | 1 V | 30 V | 2.5 W | -55 °C | 150 °C | N and P-Channel | 520 pF | 4.3 A 5.8 A | Surface Mount | |
Infineon Technologies | MOSFET (Metal Oxide) | 8-SOIC | 3.9 mm | 0.154 in | 8-SO | 25 nC | 1 V | 30 V | 2.5 W | -55 °C | 150 °C | N and P-Channel | 520 pF | 4.3 A 5.8 A | Surface Mount | |
Infineon Technologies | MOSFET (Metal Oxide) | 8-SOIC | 3.9 mm | 0.154 in | 8-SO | 25 nC | 1 V | 30 V | 2.5 W | N and P-Channel | 520 pF | 4.3 A 5.8 A | Surface Mount | Logic Level Gate |