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MOSFET P-CH 20V 9.4A 8TSON
| Part | Operating Temperature | Power Dissipation (Max) | Technology | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs [Max] | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Mounting Type | Supplier Device Package | Drain to Source Voltage (Vdss) | Package / Case | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 150 °C | 18 W 700 mW | MOSFET (Metal Oxide) | 36 nC | 1.2 V | 9.4 A | 16 mOhm | 1.8 V 4.5 V | P-Channel | Surface Mount | 8-TSON Advance (3.1x3.1) | 20 V | 8-PowerVDFN | 12 V |