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MOSFET N-CH 20V 800MA UFM
| Part | Vgs(th) (Max) @ Id | Operating Temperature | Vgs (Max) | Rds On (Max) @ Id, Vgs | Mounting Type | Supplier Device Package | FET Type | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 1 V | 150 °C | 8 V | 57 mOhm | Surface Mount | UFM | N-Channel | 1 W | 2 nC | MOSFET (Metal Oxide) | 20 V | 800 mA | 1.2 V 4.5 V | 177 pF |