IMBG65R007 Series
Manufacturer: INFINEON
Beta
⌘K
SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 238 A, 650 V, 0.0061 OHM, TO-263 (D2PAK)
| Part | Power Dissipation (Max) | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Technology | Vgs(th) (Max) | Input Capacitance (Ciss) (Max) | Package Name | Gate Charge (Max) | Drain to Source Voltage (Vdss) | Vgs (Max) Positive | Vgs (Max) Negative | Rds On (Max) | Operating Temperature (Min) | Operating Temperature (Max) | Current - Continuous Drain (Id) (Tc) | FET Type | Mounting Type | Package Leads |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 INFINEON | 789 W | 20 V | 15 V | SiCFET (Silicon Carbide) | 5.6 V | 6359 pF | D2PAK PG-TO263-7-12 | 179 nC | 650 V | 23 V | -7 V | 8.5 mOhm | -55 °C | 175 °C | 238 A | N-Channel | Surface Mount | 7 Leads |