CY62177 Series

Catalog

IC SRAM 32MBIT PARALLEL 48FBGA

Part	Memory Organization [custom]	Memory Organization [custom]	Technology	Voltage - Supply [Min]	Voltage - Supply [Max]	Memory Type	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package [y]	Supplier Device Package [x]	Supplier Device Package	Package / Case	Memory Format	Memory Interface	Memory Size	Access Time	Write Cycle Time - Word, Page [custom]	Write Cycle Time - Word, Page [custom]	Package / Case [y]	Package / Case [y]	Memory Organization
Infineon Technologies CY62177EV18LL-70BAXIT	8 16	2 M 4 M	SRAM - Asynchronous	1.65 V	2.25 V	Volatile	Surface Mount	85 °C	-40 °C	9.5	8	48-FBGA (8x9.5)	48-TFBGA	SRAM	Parallel	32 Gbit	70 ns
Infineon Technologies CY62177GE30-55ZXIT			SRAM - Asynchronous	2.2 V	3.6 V	Volatile	Surface Mount	85 °C	-40 °C			48-TSOP I	48-TFSOP	SRAM	Parallel	32 Gbit	55 ns	55 ns	55 ns	18.4 mm	0.724 in	2 M
Infineon Technologies CY62177EV30LL-55ZXI	8 16	2 M 4 M	SRAM - Asynchronous	2.2 V	3.7 V	Volatile	Surface Mount	85 °C	-40 °C			48-TSOP I	48-TFSOP	SRAM	Parallel	32 Gbit	55 ns	55 ns	55 ns	18.4 mm	0.724 in
Infineon Technologies CY62177EV30LL-55ZXI	8 16	2 M 4 M	SRAM - Asynchronous	2.2 V	3.7 V	Volatile	Surface Mount	85 °C	-40 °C			48-TSOP I	48-TFSOP	SRAM	Parallel	32 Gbit	55 ns	55 ns	55 ns	18.4 mm	0.724 in
Infineon Technologies CY62177G30-55BAXIT			SRAM - Asynchronous	2.2 V	3.6 V	Volatile	Surface Mount	85 °C	-40 °C	9.5	8	48-FBGA (8x9.5)	48-TFBGA	SRAM	Parallel	32 Gbit	55 ns	55 ns	55 ns			2 M
Infineon Technologies CY62177G30-55BAXI	8 16	2 M 4 M	SRAM - Asynchronous	2.2 V	3.6 V	Volatile	Surface Mount	85 °C	-40 °C	9.5	8	48-FBGA (8x9.5)	48-TFBGA	SRAM	Parallel	32 Gbit	55 ns	55 ns	55 ns
Infineon Technologies CY62177G30-55BKXI			SRAM - Asynchronous	2.2 V	3.6 V	Volatile	Surface Mount	85 °C	-40 °C			48-FBGA (6x8)	48-TFBGA	SRAM	Parallel	32 Gbit	55 ns	55 ns	55 ns			2 M