IR MOSFET™ N-CHANNEL POWER MOSFET ; I2PAK TO-262 PACKAGE; 3 MOHM;
| Part | Vgs(th) (Max) @ Id | Supplier Device Package | Rds On (Max) @ Id, Vgs [Max] | Technology | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Vgs (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds [Max] | Power Dissipation (Max) [Max] | Package / Case | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 4 V | TO-262 | 3 mOhm | MOSFET (Metal Oxide) | 10 V | Through Hole | 20 V | -55 °C | 175 ░C | 170 nC | 6540 pF | 300 W | I2PAK TO-262-3 Long Leads TO-262AA | 120 A | 60 V | N-Channel |