IC EEPROM 1KBIT 1-WIRE 6TSOC
Part | Supplier Device Package | Operating Temperature [Max] | Operating Temperature [Min] | Memory Size | Memory Organization | Write Cycle Time - Word, Page | Memory Format | Memory Interface | Package / Case | Memory Type | Mounting Type | Voltage - Supply [Max] | Voltage - Supply [Min] | Technology | Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Analog Devices Inc./Maxim Integrated DS28E01P-W18+2T | 6-TSOC | 85 °C | -40 °C | 128 B | 256 x 4 | 10 ms | EEPROM | 1-Wire® | 6-SMD, J-Lead | Non-Volatile | Surface Mount | 5.25 V | 2.8 V | EEPROM | |
Analog Devices Inc./Maxim Integrated DS28E01PMOD+ | |||||||||||||||
Analog Devices Inc./Maxim Integrated DS28E01G-100+T&R | 2-SFN (6x6) | 85 °C | -40 °C | 128 B | 256 x 4 | EEPROM | 1-Wire® | 2-SFN | Non-Volatile | Surface Mount | 5.25 V | 2.85 V | EEPROM | 2 µs | |
Analog Devices Inc./Maxim Integrated DS28E01G-100+U | 2-SFN (6x6) | 85 °C | -40 °C | 128 B | 256 x 4 | EEPROM | 1-Wire® | 2-SFN | Non-Volatile | Surface Mount | 5.25 V | 2.85 V | EEPROM | 2 µs | |
Analog Devices Inc./Maxim Integrated DS28E01-100+ | TO-92-3 | 85 °C | -40 °C | 128 B | 256 x 4 | EEPROM | 1-Wire® | TO-226-3, TO-92-3 | Non-Volatile | Through Hole | 5.25 V | 2.8 V | EEPROM | 2 µs | |
Analog Devices Inc./Maxim Integrated DS28E01P-5A5-A5+2T | 6-TSOC | 85 °C | -40 °C | 128 B | 256 x 4 | EEPROM | 1-Wire® | 6-SMD, J-Lead | Non-Volatile | Surface Mount | 5.25 V | 2.85 V | EEPROM | 2 µs | |
Analog Devices Inc./Maxim Integrated DS28E01Q-W14+1T | 6-TDFN (3x3) | 85 °C | -40 °C | 128 B | 256 x 4 | 10 ms | EEPROM | 1-Wire® | Non-Volatile | Surface Mount | 5.25 V | 2.8 V | EEPROM | ||
Analog Devices Inc./Maxim Integrated DS28E01P-100+T | 6-TSOC | 85 °C | -40 °C | 128 B | 256 x 4 | EEPROM | 1-Wire® | 6-SMD, J-Lead | Non-Volatile | Surface Mount | 5.25 V | 2.85 V | EEPROM | 2 µs | |
Analog Devices Inc./Maxim Integrated DS28E01P-100+ | 6-TSOC | 85 °C | -40 °C | 128 B | 256 x 4 | EEPROM | 1-Wire® | 6-SMD, J-Lead | Non-Volatile | Surface Mount | 5.25 V | 2.85 V | EEPROM | 2 µs |