SIC, SCHOTTKY DIODE
| Part | Capacitance @ Vr, F | Qualification | Package / Case | Speed | Reverse Recovery Time (trr) | Mounting Type | Technology | Voltage - Forward (Vf) (Max) @ If | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Grade | Supplier Device Package | Current - Average Rectified (Io) | Voltage - DC Reverse (Vr) (Max) [Max] | Current - Reverse Leakage @ Vr |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Wolfspeed E6D16065A | 1026 pF | AEC-Q101 | TO-220-2 | No Recovery Time | 0 ns | Through Hole | SiC (Silicon Carbide) Schottky | 1.5 V | 175 ░C | -55 C | Automotive | TO-220-2 | 54 A | 650 V | 50 µA |
Wolfspeed E6D16065G | 1017 pF | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB | No Recovery Time | 0 ns | Surface Mount | SiC (Silicon Carbide) Schottky | 1.5 V | 175 ░C | -55 C | TO-263-2 | 51 A | 650 V | 50 µA | ||
Wolfspeed E6D16065H | 1017 pF | AEC-Q101 | TO-247-2 | No Recovery Time | 0 ns | Through Hole | SiC (Silicon Carbide) Schottky | 1.5 V | 175 ░C | -55 C | Automotive | TO-247-2 | 51 A | 650 V | 50 µA |
Wolfspeed E6D16065D1 | 1017 pF | TO-247-3 | No Recovery Time | 0 ns | Through Hole | SiC (Silicon Carbide) Schottky | 1.5 V | 175 ░C | -55 C | TO-247-3 | 51 A | 650 V | 50 µA |