DIODE SIC 650V TO247
| Part | Qualification | Current - Average Rectified (Io) | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Reverse Recovery Time (trr) | Capacitance @ Vr, F | Package / Case | Voltage - DC Reverse (Vr) (Max) [Max] | Supplier Device Package | Technology | Grade | Speed | Current - Reverse Leakage @ Vr | Mounting Type | Voltage - Forward (Vf) (Max) @ If | Diode Configuration | Current - Average Rectified (Io) (per Diode) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Wolfspeed E6D30065H | AEC-Q101 | 84 A | 175 ░C | -55 C | 0 ns | 1850 pF | TO-247-2 | 650 V | TO-247-2 | SiC (Silicon Carbide) Schottky | Automotive | No Recovery Time | 100 µA | Through Hole | 1.5 V | ||
Wolfspeed E6D30065A | AEC-Q101 | 92.5 A | 175 ░C | -55 C | 0 ns | 1864 pF | TO-220-2 | 650 V | TO-220-2 | SiC (Silicon Carbide) Schottky | Automotive | No Recovery Time | 100 µA | Through Hole | 1.5 V | ||
Wolfspeed E6D30065D | 175 ░C | -55 C | 0 ns | TO-247-3 | 650 V | TO-247-3 | SiC (Silicon Carbide) Schottky | No Recovery Time | 50 µA | Through Hole | 1.5 V | 1 Pair Common Cathode | 50 A | ||||
Wolfspeed E6D30065G | 95 A | 175 ░C | -55 C | 0 ns | 1841 pF | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB | 650 V | TO-263-2 | SiC (Silicon Carbide) Schottky | No Recovery Time | 100 µA | Surface Mount | 1.5 V |