DIODE GEN PURP 600V 6A R-6
| Part | Package / Case | Speed | Speed | Mounting Type | Qualification | Capacitance @ Vr, F | Voltage - Forward (Vf) (Max) @ If | Grade | Technology | Voltage - DC Reverse (Vr) (Max) [Max] | Current - Average Rectified (Io) | Supplier Device Package | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Current - Reverse Leakage @ Vr |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Taiwan Semiconductor Corporation | R-6 Axial | Standard Recovery >500ns | 200 mA | Through Hole | AEC-Q101 | 60 pF | 1 V | Automotive | Standard | 600 V | 6 A | R-6 | 150 °C | -55 °C | 10 µA |
Taiwan Semiconductor Corporation | R-6 Axial | Standard Recovery >500ns | 200 mA | Through Hole | 60 pF | 1 V | Standard | 600 V | 6 A | R-6 | 150 °C | -55 °C | 10 µA | ||
Taiwan Semiconductor Corporation | R-6 Axial | Standard Recovery >500ns | 200 mA | Through Hole | 60 pF | 1 V | Standard | 600 V | 6 A | R-6 | 150 °C | -55 °C | 10 µA |