Catalog
NPN, 120V, 1A, SOT23
Key Features
• BVCEO > 120V
• IC = 1A Continuous Collector Current
• ICM = 2A Peak Pulse Current
• 500mW Power Dissipation
• hFE characterised up to 1A for high current gain hold up
Description
AI
This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications.