IC GATE DRVR HIGH-SIDE 8SOIC
| Part | Supplier Device Package | Mounting Type | Grade | Input Type | Rise / Fall Time (Typ) [custom] | Rise / Fall Time (Typ) [custom] | Operating Temperature [Max] | Operating Temperature [Min] | Driven Configuration | Channel Type | Package / Case | Package / Case [y] | Package / Case [x] | Logic Voltage - VIL, VIH [Max] | Logic Voltage - VIL, VIH [Min] | Qualification | Number of Drivers | High Side Voltage - Max (Bootstrap) [Max] | Current - Peak Output (Source, Sink) [custom] | Current - Peak Output (Source, Sink) [custom] | Gate Type | Voltage - Supply [Max] | Voltage - Supply [Min] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 8-SOIC | Surface Mount | Automotive | Non-Inverting | 75 ns | 25 ns | 150 °C | -40 °C | High-Side | Single | 8-SOIC | 3.9 mm | 0.154 in | 9.5 V | 6 V | AEC-Q100 | 1 | 600 V | 290 mA | 600 mA | IGBT N-Channel MOSFET | 20 V | 10 VDC |
Infineon Technologies | 8-SOIC | Surface Mount | Automotive | Non-Inverting | 75 ns | 25 ns | 150 °C | -40 °C | High-Side | Single | 8-SOIC | 3.9 mm | 0.154 in | 9.5 V | 6 V | AEC-Q100 | 1 | 600 V | 290 mA | 600 mA | IGBT N-Channel MOSFET | 20 V | 10 VDC |