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MOSFET N-CH 80V 34A 8TSON
| Part | Vgs(th) (Max) @ Id | Operating Temperature | Gate Charge (Qg) (Max) @ Vgs [Max] | Package / Case | Input Capacitance (Ciss) (Max) @ Vds | FET Type | Drain to Source Voltage (Vdss) | Supplier Device Package | Power Dissipation (Max) | Mounting Type | Vgs (Max) | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) @ 25°C | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 3.5 V | 175 °C | 16 nC | 8-PowerVDFN | 1400 pF | N-Channel | 80 V | 8-TSON Advance (3.1x3.1) | 57 W 630 mW | Surface Mount | 20 V | 19 mOhm | 6 V 10 V | 34 A | MOSFET (Metal Oxide) |