IC GATE DRVR HALF-BRIDGE 28DIP
| Part | Package / Case | Package / Case | Package / Case | Supplier Device Package | Gate Type | Input Type | Driven Configuration | Operating Temperature [Max] | Operating Temperature [Min] | Logic Voltage - VIL, VIH | High Side Voltage - Max (Bootstrap) [Max] | Number of Drivers | Channel Type | Mounting Type | Voltage - Supply [Max] | Voltage - Supply [Min] | Rise / Fall Time (Typ) [custom] | Rise / Fall Time (Typ) [custom] | Package / Case [x] | Package / Case [y] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 28-DIP | 0.6 in | 15.24 mm | 28-PDIP | IGBT MOSFET N-Channel MOSFET | Inverting Non-Inverting | Half-Bridge | 150 °C | -40 °C | 0.8 V 3 V | 600 V | 6 | 3-Phase | Through Hole | 20 V | 11.5 V | 125 ns | 50 ns | ||
Infineon Technologies | 28-SOIC | 28-SOIC | IGBT N-Channel MOSFET | Inverting Non-Inverting | Half-Bridge | 150 °C | -40 °C | 0.8 V 3 V | 600 V | 6 | 3-Phase | Surface Mount | 20 V | 11.5 V | 125 ns | 50 ns | 0.295 in | 7.5 mm | ||
Infineon Technologies | 28-DIP | 0.6 in | 15.24 mm | 28-PDIP | IGBT N-Channel MOSFET | Inverting Non-Inverting | Half-Bridge | 150 °C | -40 °C | 0.8 V 3 V | 600 V | 6 | 3-Phase | Through Hole | 20 V | 11.5 V | 125 ns | 50 ns |