IRFH4210 Series

Catalog

IR MOSFET™ N-CHANNEL POWER MOSFET ; PQFN 5 X 6 B PACKAGE; 1.1 MOHM; SCHOTTKY

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Mounting Type	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Package / Case	FET Type	Technology	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package
Infineon Technologies IRFH4210DTRPBF	77 nC	25 V	1.1 mOhm	-55 °C	150 °C	3.5 W 125 W	Surface Mount	2.1 V	4.5 V 10 V	44 A	20 V	8-PowerTDFN	N-Channel	MOSFET (Metal Oxide)	4812 pF	PQFN (5x6)
Infineon Technologies IRFH4210DTRPBF	77 nC	25 V	1.1 mOhm	-55 °C	150 °C	3.5 W 125 W	Surface Mount	2.1 V	4.5 V 10 V	44 A	20 V	8-PowerTDFN	N-Channel	MOSFET (Metal Oxide)	4812 pF	PQFN (5x6)