MOSFET N-CH 60V 200MA SC59
| Part | Rds On (Max) @ Id, Vgs | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Technology | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Package / Case | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature | Vgs (Max) | FET Type | Vgs(th) (Max) @ Id | Operating Temperature [Min] | Operating Temperature [Max] | Power Dissipation (Max) [Max] | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 2.1 Ohm | SC-59 | 200 mA | MOSFET (Metal Oxide) | Surface Mount | 4.5 V 10 V | 200 mW | 60 V | SC-59 SOT-23-3 TO-236-3 | 17 pF | 150 °C | 20 V | N-Channel | |||||
Toshiba Semiconductor and Storage | 2.1 Ohm | S-Mini | 200 mA | MOSFET (Metal Oxide) | Surface Mount | 4.5 V 10 V | 200 mW | 60 V | SC-59 SOT-23-3 TO-236-3 | 17 pF | 150 °C | 20 V | N-Channel | 2.5 V | ||||
Toshiba Semiconductor and Storage | 1.5 Ohm | S-Mini | 400 mA | MOSFET (Metal Oxide) | Surface Mount | 4.5 V 10 V | 60 V | SC-59 SOT-23-3 TO-236-3 | 40 pF | 20 V | N-Channel | 2.1 V | -55 °C | 150 °C | 270 mW | 0.6 nC | ||
Toshiba Semiconductor and Storage | 1.5 Ohm | USM | 400 mA | MOSFET (Metal Oxide) | Surface Mount | 4.5 V 10 V | 60 V | SC-70 SOT-323 | 40 pF | 150 °C | 20 V | N-Channel | 2.1 V | 150 mW | 0.6 nC | |||
Toshiba Semiconductor and Storage | 2.1 Ohm | USM | 200 mA | MOSFET (Metal Oxide) | Surface Mount | 4.5 V 10 V | 60 V | SC-70 SOT-323 | 17 pF | 150 °C | 20 V | N-Channel | 3.1 V | 150 mW |