DIODE GEN PURP 150V 1A TS-1
| Part | Capacitance @ Vr, F | Mounting Type | Current - Average Rectified (Io) | Package / Case | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Speed | Supplier Device Package | Current - Reverse Leakage @ Vr | Technology | Grade | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Taiwan Semiconductor Corporation | 20 pF | Through Hole | 1 A | T-18 Axial | 150 °C | -55 °C | 950 mV | 35 ns | 200 mA 500 ns | TS-1 | 5 µA | Standard | ||
Taiwan Semiconductor Corporation | 20 pF | Through Hole | 1 A | T-18 Axial | 150 °C | -55 °C | 950 mV | 35 ns | 200 mA 500 ns | TS-1 | 5 µA | Standard | Automotive | AEC-Q101 |
Taiwan Semiconductor Corporation | 20 pF | Through Hole | 1 A | T-18 Axial | 150 °C | -55 °C | 950 mV | 35 ns | 200 mA 500 ns | TS-1 | 5 µA | Standard | Automotive | AEC-Q101 |
Taiwan Semiconductor Corporation | 20 pF | Through Hole | 1 A | T-18 Axial | 150 °C | -55 °C | 950 mV | 35 ns | 200 mA 500 ns | TS-1 | 5 µA | Standard |