POWER MOSFET, P CHANNEL, 40 V, 10.5 A, 0.015 OHM, SOIC, SURFACE MOUNT
| Part | Technology | Mounting Type | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Supplier Device Package | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) | FET Type | Operating Temperature [Min] | Operating Temperature [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Package / Case | Package / Case [y] | Package / Case [x] | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | MOSFET (Metal Oxide) | Surface Mount | 15 mOhm | 10.5 A | 40 V | 8-SO | 20 V | 9250 pF | 4.5 V 10 V | 2.5 W | P-Channel | -55 °C | 150 °C | 110 nC | 8-SOIC | 3.9 mm | 0.154 in | 3 V |