OPTIMOS™ 3 N-CHANNEL POWER MOSFET 60 V ; I2PAK TO-262 PACKAGE; 3.2 MOHM;
| Part | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature [Min] | Operating Temperature [Max] | FET Type | Package / Case | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 3.2 mOhm | 188 W | 165 nC | 20 V | 13000 pF | 60 V | 4 V | 120 A | Through Hole | PG-TO262-3 | 10 V | -55 °C | 175 ░C | N-Channel | I2PAK TO-262-3 Long Leads TO-262AA | MOSFET (Metal Oxide) |