IC GATE DRVR HALF-BRIDGE 8DIP
| Part | Voltage - Supply [Max] | Voltage - Supply [Min] | Logic Voltage - VIL, VIH | Package / Case | Package / Case | Package / Case | Number of Drivers | Mounting Type | Driven Configuration | High Side Voltage - Max (Bootstrap) [Max] | Rise / Fall Time (Typ) [custom] | Rise / Fall Time (Typ) [custom] | Supplier Device Package | Operating Temperature [Max] | Operating Temperature [Min] | Channel Type | Input Type | Gate Type | Current - Peak Output (Source, Sink) [custom] | Current - Peak Output (Source, Sink) [custom] | Package / Case [y] | Package / Case [x] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 20 V | 10 VDC | 0.8 V 2.5 V | 0.3 in | 8-DIP | 7.62 mm | 2 | Through Hole | Half-Bridge | 600 V | 20 ns | 40 ns | 8-PDIP | 150 °C | -40 °C | Independent | Inverting Non-Inverting | IGBT N-Channel MOSFET | 2.3 A | 1.9 A | ||
Infineon Technologies | 20 V | 10 VDC | 0.8 V 2.5 V | 8-SOIC | 2 | Surface Mount | Half-Bridge | 600 V | 20 ns | 40 ns | 8-SOIC | 150 °C | -40 °C | Independent | Inverting Non-Inverting | IGBT N-Channel MOSFET | 2.3 A | 1.9 A | 3.9 mm | 0.154 in | ||
Infineon Technologies | 20 V | 10 VDC | 0.8 V 2.5 V | 0.3 in | 8-DIP | 7.62 mm | 2 | Through Hole | Half-Bridge | 600 V | 20 ns | 40 ns | 8-PDIP | 150 °C | -40 °C | Independent | Inverting Non-Inverting | IGBT N-Channel MOSFET | 2.3 A | 1.9 A |