ISL89165 Series

Manufacturer: Renesas Electronics Corporation

Catalog

HIGH SPEED, DUAL CHANNEL, 6A, POWER MOSFET DRIVER WITH ENABLE INPUTS

Part	Gate Type	Current - Peak Output (Source)	Current - Peak Output (Sink)	Number of Drivers	Package / Case	Operating Temperature (Max)	Operating Temperature (Min)	Logic Voltage - VIL	Logic Voltage - VIH	Package Width	Package Name	Package Length	Gate Channel	Channel Type	Mounting Type	Input Type	Voltage - Supply (Minimum)	Voltage - Supply (Maximum)	Rise Time (Typ)	Fall Time (Typ)	Driven Configuration	Package Features
Renesas Electronics Corporation ISL89165FRTAZ	MOSFET N-Channel MOSFET	6 A	6 A	2	8-WDFN Exposed Pad	125 °C	-40 °C	1.22 V	2.08 V	3 mm	8-TDFN	3 mm	N-Channel	Independent	Surface Mount	Inverting Non-Inverting	4.5 V	16 V	20 ns	20 ns	Low-Side
Renesas Electronics Corporation ISL89165FBEAZ-T	MOSFET	6 A	6 A	2		125 °C	-40 °C	1.22 V	2.08 V	3.9 mm	8-SOIC 8-SOIC-EP	0.154 in	N-Channel	Independent	Surface Mount	Inverting Non-Inverting	4.5 V	16 V	20 ns	20 ns	Low-Side	Exposed Pad
Renesas Electronics Corporation ISL89165FBEBZ-T	MOSFET N-Channel MOSFET	6 A	6 A	2		125 °C	-40 °C	1.85 V	3.15 V	3.9 mm	8-SOIC 8-SOIC-EP	0.154 in	N-Channel	Independent	Surface Mount	Inverting Non-Inverting	4.5 V	16 V	20 ns	20 ns	Low-Side	Exposed Pad
Renesas Electronics Corporation ISL89165FRTAZ-T	MOSFET N-Channel MOSFET	6 A	6 A	2	8-WDFN Exposed Pad	125 °C	-40 °C	1.22 V	2.08 V	3 mm	8-TDFN	3 mm	N-Channel	Independent	Surface Mount	Inverting Non-Inverting	4.5 V	16 V	20 ns	20 ns	Low-Side
Renesas Electronics Corporation ISL89165FRTBZ	MOSFET	6 A	6 A	2	8-WDFN Exposed Pad	125 °C	-40 °C	1.85 V	3.15 V	3 mm	8-TDFN	3 mm	N-Channel	Independent	Surface Mount	Inverting Non-Inverting	4.5 V	16 V	20 ns	20 ns	Low-Side
Renesas Electronics Corporation ISL89165FBEAZ	MOSFET	6 A	6 A	2		125 °C	-40 °C	1.22 V	2.08 V	3.9 mm	8-SOIC 8-SOIC-EP	0.154 in	N-Channel	Independent	Surface Mount	Inverting Non-Inverting	4.5 V	16 V	20 ns	20 ns	Low-Side	Exposed Pad
Renesas Electronics Corporation ISL89165FBEBZ	MOSFET N-Channel MOSFET	6 A	6 A	2		125 °C	-40 °C	1.85 V	3.15 V	3.9 mm	8-SOIC 8-SOIC-EP	0.154 in	N-Channel	Independent	Surface Mount	Inverting Non-Inverting	4.5 V	16 V	20 ns	20 ns	Low-Side	Exposed Pad
Renesas Electronics Corporation ISL89165FRTBZ-T	MOSFET N-Channel MOSFET	6 A	6 A	2	8-WDFN Exposed Pad	125 °C	-40 °C	1.85 V	3.15 V	3 mm	8-TDFN	3 mm	N-Channel	Independent	Surface Mount	Inverting Non-Inverting	4.5 V	16 V	20 ns	20 ns	Low-Side