PMBT3906 Series

Low-current voltage regulator diodes Voltage regulator diodes Single Zener diodes General-purpose Schottky diode Voltage regulator diodes Single Zener diodes NPN/NPN general-purpose double transistor 45 V, 1 A PNP medium power transistors Voltage regulator diodes 45 V, 100 mA NPN/NPN general-purpose double transistor Voltage regulator diodes Low-current voltage regulator diodes 20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFET 45 V, 10 A extremely low VF MEGA Schottky barrier rectifier Voltage regulator diodes Single Zener diodes Voltage regulator diodes 45 V, 500 mA PNP general-purpose transistors 60 V, 1 A NPN medium power transistors Single Zener diodes in a SOD123 package Dual supply translating transceiver; 3-state 45 V, 100 mA NPN/NPN matched double transistor Voltage regulator diodes High-speed switching diode 20 V, P-channel Trench MOSFET 50 V, 100 mA NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ 8-channel analog multiplexer/demultiplexer Adjustable precision shunt regulators Voltage regulator diodes Voltage regulator diodes Low-power configurable gate with voltage-level translator 80 V, 100 mA PNP resistor-equipped transistors Voltage regulator diodes Voltage regulator diodes Single 3-input AND gate 50 V, 100 mA NPN/PNP Resistor-Equipped Transistor; R1 = 4.7 kΩ, R2 = open Voltage regulator diodes 45 V, 1 A PNP medium power transistors Voltage regulator diodes Low-power 2-input OR-gate Low-current voltage regulator diodes Voltage regulator diodes Single Zener diodes in a SOD123 package Voltage regulator diodes Voltage regulator diodes 100 V, 1 A NPN low VCEsat transistor Double high-speed switching diode Voltage regulator diodes Dual high-voltage switching diodes 45 V, 100 mA NPN general-purpose transistors 4-bit dual supply translating transceiver; 3-state Voltage regulator diodes 60 V, 360 mA N-channel Trench MOSFET Voltage regulator diodes 500 mA, 50 V NPN/PNP double resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ 45 V, 800 mA PNP general-purpose transistor Zener voltage regulator diodes in a SOD323F package Ultra low capacitance double rail-to-rail ESD protection diode Voltage regulator diodes 60 V, 1 A PNP medium power transistor 65 V, 100 mA PNP general-purpose transistors Voltage regulator diodes Schottky barrier dual diode Voltage regulator diodes Voltage regulator diodes 65 V, 100 mA PNP general-purpose transistors Voltage regulator diodes Single Zener diodes in a SOD123 package Voltage regulator diodes 30 V, 350 mA dual N-channel Trench MOSFET Dual-supply voltage level translator/transceiver; 3-state Low-power X-tal driver with enable and internal resistor Low-power configurable multiple function gate Single 3-input OR gate 20 V, 1 A low VF Schottky barrier diode 20 V, 2 A PNP medium power transistors Voltage regulator diodes 45 V, 500 mA NPN general-purpose transistors 2-input NAND gate; open drain 45 V, 5 A low VF MEGA Schottky barrier rectifier 50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 10 kΩ, R2 = 10 kΩ PNP general purpose transistors 65 V, 100 mA NPN general-purpose transistors 40 V, 1 A low VF MEGA Schottky barrier rectifier Single Zener diodes 40 V, 200 mA Schottky barrier diode Voltage regulator diodes 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET High-voltage switching diode Voltage regulator diodes Schottky barrier diode Voltage regulator diodes 65 V, 100 mA NPN general-purpose transistors Single D-type flip-flop with reset; positive-edge trigger 50 V low VCEsat NPN transistor Low-current voltage regulator diodes Voltage regulator diodes Voltage regulator diodes PNP/PNP general purpose double transistor NPN 500 mA, 50 V resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ 65 V, 100 mA NPN/NPN matched double transistor 65 V, 100 mA PNP general-purpose transistors Voltage regulator diodes 80 V, 1 A NPN power bipolar transistors 65 V, 100 mA NPN general-purpose transistors NPN switching transistor Common-mode EMI filter for differential channels with integrated ESD protection N-channel 40 V, 3.5 mΩ, 120 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology ESD protection diode in SOD523 package PNP general purpose transistors High-speed diodes 400 W Transient Voltage Suppressor NPN/PNP general purpose transistor Adjustable precision shunt regulators Single Zener diodes 50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 4.7 kΩ, R2 = 4.7 kΩ ESD protection for differential data lines 45 V, 1 A NPN medium power transistors Single Zener diodes Voltage regulator diodes 60 V, 1 A NPN medium power transistor 50 V, 500 mA PNP general-purpose transistor 50 V, 100 mA NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 22 kΩ Voltage regulator diodes 50 V, 100 mA NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 47 kΩ Low-current voltage regulator diodes 60 V, 4.7 A NPN low VCEsat transistor Single Zener diodes 80 V, 1 A PNP medium power transistors 45 V, 500 mA PNP general-purpose transistors PNP general purpose double transistor 65 V, 100 mA PNP general-purpose transistors Single 2-input NAND gate General-purpose dual Schottky diode Dual Zener diodes Voltage regulator diodes Voltage regulator diodes Voltage regulator diodes High-speed switching diode 60 V, N-channel Trench MOSFET Voltage regulator diodes 80 V, 100 mA PNP/PNP resistor-equipped double transistors PNP general purpose transistors NPN general purpose transistor Voltage regulator diodes General-purpose dual Schottky diode Low-current voltage regulator diodes Voltage regulator diodes Voltage regulator diodes Single Zener diodes 50 V, 100 mA NPN/NPN resistor-equipped double transistor; R1 = 47 kΩ, R2 = 47 kΩ High-speed switching double diode Voltage regulator diodes Voltage regulator diodes Voltage regulator diodes Low-leakage double diode 20 V, 2 A very low VF Schottky barrier rectifier Low-power 2-input multiplexer ESD protection for high-speed interfaces 50 V, 100 mA PNP/PNP resistor-equipped double transistor; R1 = 47 kΩ, R2 = 47 kΩ 80 V, 100 mA NPN resistor-equipped transistors Low capacitance unidirectional fivefold ESD protection diode arrays 45 V, 500 mA NPN general-purpose transistors Low-power 1-of-2 demultiplexer with 3-state deselected output Voltage regulator diodes PNP general purpose double transistor NPN general purpose transistors 45 V, 800 mA NPN general-purpose transistor 50 V, 500 mA PNP resistor-equipped transistor Voltage regulator diodes Voltage regulator diodes ESD protection for high-speed interfaces 50 V, 100 mA PNP/PNP Resistor-Equipped double Transistor; R1 = 4.7 kΩ, R2 = open 50 V, 100 mA NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 22 kΩ 45 V, 500 mA NPN general-purpose transistors Single Zener diodes Single Zener diodes Low-current voltage regulator diodes 80 V, 1 A NPN medium power transistors 45 V, 100 mA PNP general-purpose transistor N-channel 30 V, 1.4 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology NPN medium frequency transistor Medium power Schottky barrier single diode 80 V, 1 A PNP medium power transistor Low-current voltage regulator diodes 50 V, 500 mA NPN general-purpose transistor NPN high-voltage transistor Schottky barrier diode Voltage regulator diodes 65 V, 100 mA PNP/PNP matched double transistors Voltage regulator diodes NPN general purpose transistor 100 V, 1 A NPN low VCEsat transistor Voltage regulator diodes Single Zener diodes Dual high-voltage switching diodes Single Zener diodes in a SOD123 package Single Zener diodes Voltage regulator diodes 45 V, 100 mA PNP/PNP matched double transistor Voltage regulator diodes Voltage regulator diodes 45 V, 500 mA NPN general-purpose transistors Voltage regulator diodes Low-current voltage regulator diodes 60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET 20 V, 1.2 A P-channel Trench MOSFET 45 V, 500 mA NPN general-purpose transistors General-purpose dual Schottky diode Single Zener diodes in a SOD123 package Voltage regulator diodes Dual inverting Schmitt trigger with 5 V tolerant input Low-power 2-input NOR gate 80 V, 500 mA PNP general-purpose transistors 50 V, 100 mA NPN/NPN resistor-equipped double transistor; R1 = 10 kΩ, R2 = 47 kΩ General-purpose dual Schottky diode Single Zener diodes Single Zener diodes Single Zener diodes Hex unbuffered inverter 20 V, 2 A PNP medium power transistors 45 V, 500 mA PNP general-purpose transistors Single Zener diodes 45 V, 100 mA NPN general-purpose transistors 60 V, N-channel Trench MOSFET 50 V, 500 mA NPN resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ Double ESD protection diode for transient overvoltage suppression 40 V; 2 A PNP low VCEsat transistor Schottky barrier diode Voltage regulator diodes 60 V, single N-channel Trench MOSFET 2-input EXCLUSIVE-OR gate Low-current voltage regulator diodes Single Zener diodes in a SOD123 package 40 V, 200 mA PNP switching transistor 20 V, 2 A very low VF Schottky barrier rectifier Single Zener diodes in a SOD123 package Single Zener diodes Voltage regulator diodes ESD protection for differential data lines Low-power dual inverter with open-drain output Voltage regulator diodes 80 V, 100 mA PNP resistor-equipped transistors Low-power dual supply translating buffer Voltage regulator diodes Voltage regulator diodes Ultra compact transient voltage suppressor Single Zener diodes in a SOD123 package Voltage regulator diodes Voltage regulator diodes Voltage regulator diodes 20 V, 2 A P-channel Trench MOSFET Low-leakage diode General purpose diode Voltage regulator diodes Low-current voltage regulator diodes 40 V, 600 mA NPN switching transistor 50 V, 15 A low VF MEGA Schottky barrier rectifier Low capacitance bidirectional ESD protection diode in SOD323 NPN general purpose transistor 100 V, 10 A low leakage current Schottky barrier rectifier Voltage regulator diodes PNP general purpose transistor General-purpose dual Schottky diode Voltage regulator diodes Quadruple bidirectional ESD transient voltage suppressor Dual-supply voltage level translator/transceiver; 3-state Voltage regulator diodes 20 V, 3.5 A P-channel Trench MOSFET 50 V, 2 A NPN low VCEsat transistor Voltage regulator diodes Voltage regulator diodes Single Zener diodes Voltage regulator diodes Low-current voltage regulator diodes Single Zener diodes in a SOD123 package 45 V, 1 A NPN medium power transistors Voltage regulator diodes Voltage regulator diodes Voltage regulator diodes 30 V, 0.1 A low VF MEGA Schottky barrier rectifier 50 V, 150 mA NPN general-purpose transistors ESD protection for high-speed interfaces Voltage regulator diodes Voltage regulator diodes 50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = open 50 V, 100 mA PNP/PNP resistor-equipped double transistors; R1 = 10 kΩ, R2 = 10 kΩ Single Zener diodes in a SOD123 package NPN Darlington transistor Voltage regulator diodes Voltage regulator diodes High-voltage switching diode 20 V, 2 A NPN medium power transistor Voltage regulator diodes High-speed switching double diode Low capacitance bidirectional ESD protection diode Single Zener diodes 30 V, N-channel Trench MOSFET Low-power configurable multiple function gate ESD protection for high-speed interfaces 45 V, 1 A PNP medium power transistors Single Zener diodes in a SOD123 package General-purpose Schottky diode 400 W Transient Voltage Suppressor Voltage regulator diodes 50 V, 100 mA PNP/PNP resistor-equipped double transistor; R1 = 10 kΩ, R2 = 47 kΩ Single Zener diodes 45 V, 500 mA NPN general-purpose transistors Low-current voltage regulator diodes Voltage regulator diodes ESD protection for in-vehicle networks 40 V, 4 A NPN low VCEsat transistor 45 V, 500 mA NPN general-purpose transistors Voltage regulator diodes 60 V, N-channel Trench MOSFET Bus buffer/line driver; 3-state Voltage regulator diodes Low-current voltage regulator diodes Schottky barrier diode 80 V, 1 A PNP medium power transistors Voltage regulator diodes 650 V, 10 A SiC Schottky diode in bare die Zener voltage regulator diodes Low-current voltage regulator diodes Bus buffer/line driver; 3-state Single 2-input OR gate Single Zener diodes in a SOD123 package Unidirectional ESD protection for transient voltage suppression Low-current voltage regulator diodes Unbuffered inverter Voltage regulator diodes Dual high-voltage switching diodes 400 V, 0.5 A PNP high-voltage low VCEsa transistor Single Zener diodes 40 V, 100 mA PNP general-purpose transistor Low-current voltage regulator diodes Schottky barrier diode High-speed switching double diode 100 V, 6 A low leakage current Schottky barrier rectifier Voltage regulator diodes NPN high-voltage transistor Quadruple ESD transient voltage suppressor High-voltage switching diode High-speed switching diode Voltage regulator diodes 50 V, 100 mA PNP resistor-equipped transistor; R1 = 22 kΩ, R2 = 22 kΩ 40 V low VCEsat NPN/PNP transistor Voltage regulator diodes Voltage regulator diodes 60 V, 5 A low VF MEGA Schottky barrier rectifier ESD protection for high-speed interfaces High-speed switching diode 50 V, 2 A PNP low VCEsat transistor Voltage regulator diodes Voltage regulator diodes PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ Voltage regulator diodes Voltage regulator diodes Voltage regulator diodes 45 V, 100 mA NPN/NPN general-purpose transistor Zener voltage regulator diodes 65 V, 100 mA PNP general-purpose transistors High-speed switching double diode 40 V, 0.5 A very low VF MEGA Schottky barrier rectifier 50 V, 500 mA PNP resistor-equipped transistor Voltage regulator diodes Low capacitance bidirectional ESD protection diode 50 V, 100 mA PNP resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 10 kΩ Voltage regulator diodes 65 V, 100 mA NPN general-purpose transistors 300 V, 100 mA NPN high-voltage transistor 65 V, 100 mA NPN/NPN general-purpose double transistor 50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 22 kΩ, R2 = 22 kΩ Voltage regulator diodes 80 V, 1 A NPN medium power transistors 50 V, 100 mA PNP resistor-equipped transistor; R1 = 22 kΩ, R2 = 22 kΩ Low-current voltage regulator diodes Voltage regulator diodes Adjustable precision shunt regulators Single Zener diodes in a SOD123 package Voltage regulator diodes Single Zener diodes Low-current voltage regulator diodes Voltage regulator diodes 40 V, N-channel Trench MOSFET Voltage regulator diodes Low-voltage avalanche regulator diodes 20 V, 1 A PNP medium power transistor Voltage regulator diodes N-channel vertical D-MOS logic level FET N-channel vertical D-MOS logic level FET General-purpose dual Schottky diode 80 V, 4 A NPN low VCEsat transistor Voltage regulator diodes NPN general-purpose transistor Voltage regulator diodes Low-current voltage regulator diodes 45 V, 1 A PNP medium power transistors 80 V, 1 A NPN medium power transistors Dual high-voltage switching diodes Voltage regulator diodes NPN switching transistor High-voltage switching diodes Voltage regulator diodes 20 V, single P-channel Trench MOSFET N-channel 40 V, 2.6 mΩ, 160 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology 80 V, 1 A NPN medium power transistors 60 V / 50 V, 170 mA / 160 mA N/P-channel Trench MOSFET 50 V, 100 mA NPN/NPN resistor-equipped double transistor; R1 = 47 kΩ, R2 = 47 kΩ ESD protection for high-speed interfaces Low-power D-type flip-flop; positive-edge trigger Voltage regulator diodes 50 V, 500 mA NPN resistor-equipped transistor 30 V, P-channel Trench MOSFET Low-power inverter 50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 4.7 kΩ 40 V; 2 A PNP low VCEsat transistor 400 W Transient Voltage Suppressor Low-current voltage regulator diodes General-purpose dual Schottky diode Low-power 3-input AND-OR gate 80 V, 500 mA NPN general-purpose transistors Voltage regulator diodes Single D-type flip-flop; positive-edge trigger Schottky barrier diode 45 V, 100 mA NPN general-purpose transistors NPN general purpose transistor 20 V, P-channel Trench MOSFET Voltage regulator diodes Single Zener diodes Extremely low capacitance bidirectional ESD protection diode array High-speed switching diode 80 V, 100 mA NPN resistor-equipped transistors 45 V, 100 mA NPN/NPN matched double transistor 45 V, 10 A low VF MEGA Schottky barrier rectifier Voltage regulator diodes Voltage regulator diodes Voltage regulator diodes 80 V, 100 mA NPN/PNP resistor-equipped double transistors Single Zener diodes in a SOD123 package Voltage regulator diodes N-channel 30 V, 6.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology 80 V, 100 mA NPN resistor-equipped transistors 50 V, 100 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ Voltage regulator diodes Voltage regulator diodes Single Zener diodes in a SOD123 package PNP general purpose transistor Voltage regulator diodes Voltage regulator diodes Voltage regulator diodes 45 V, 500 mA PNP general-purpose transistors 80 V, 1 A PNP medium power transistors Low capacitance bidirectional ESD protection diode 80 V, 100 mA PNP resistor-equipped transistors 50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 22 kΩ, R2 = 22 kΩ Voltage regulator diodes 65 V, 100 mA NPN/NPN general-purpose double transistor Single Zener diodes in a SOD123 package 500 V, 250 mA PNP high-voltage low VCEsat transistor Voltage regulator diodes 40 V, 2 A NPN low VCEsat (BISS) transistor Voltage regulator diodes 30 V, 1 A low VF Schottky barrier rectifier Voltage regulator diodes 50 V, 100 mA NPN/PNP Resistor-Equipped double Transistor; R1 = 4.7 kΩ, R2 = open Voltage regulator diodes Voltage regulator diodes Low-leakage switching diode Single 2-input NOR gate 30 V, single N-channel Trench MOSFET 400 W Transient Voltage Suppressor NPN/NPN matched double transistor Low-leakage double diode 65 V, 100 mA PNP general-purpose transistors Voltage regulator diodes Single Zener diodes in a SOD123 package Voltage regulator diodes Voltage regulator diodes PNP/PNP matched double transistor Transient Voltage Suppressor 50 V, 100 mA NPN/NPN resistor-equipped double transistor; R1 = 10 kΩ, R2 = 10 kΩ 20 V, 0.5 A very low VF Schottky barrier rectifier Voltage regulator diodes Low-current voltage regulator diodes Single Zener diodes Single Zener diodes Low-current voltage regulator diodes 45 V, 1 A NPN medium power transistors Voltage regulator diodes 45 V, 500 mA NPN general-purpose transistors 40 V, 2 A PNP low VCEsat (BISS) transistor 30 V, 0.5 A low VF MEGA Schottky barrier rectifier Voltage regulator diodes 80 V, 100 mA PNP resistor-equipped transistors Voltage regulator diodes Voltage regulator diodes Schottky barrier diode 60 V, 300 mA N-channel Trench MOSFET 50 V, 3 A NPN low VCEsat transistor 45 V, 500 mA NPN general-purpose transistors PNP high voltage transistor 60 V, 3 A NPN low VCEsat transistor 400 V, 0.5 A PNP high-voltage low VCEsa transistor Common-mode EMI filter for differential channels with integrated ESD protection 45 V, 500 mA PNP general-purpose transistors 45 V, 15 A low VF Trench MEGA Schottky barrier rectifier N-channel 40 V, 1.5 mΩ, 240 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology 40 V, 200 mA NPN switching transistor Voltage regulator diodes 40 V, 1 A low VF Schottky barrier rectifier 4-bit dual supply translating transceiver with configurable voltage translation; 3-state Low-power configurable gate with voltage-level translator Voltage regulator diodes Voltage regulator diodes Bilateral switch Voltage regulator diodes Voltage regulator diodes NPN switching transistor Schottky barrier diode 45 V, 100 mA PNP/PNP matched double transistor 30 V, N-channel Trench MOSFET Voltage regulator diodes Voltage regulator diodes Single 2-input multiplexer 45 V, 100 mA NPN/PNP general-purpose transistor Adjustable precision shunt regulators Voltage regulator diodes Voltage regulator diodes Voltage regulator diodes Voltage regulator diodes High-voltage switching diode High-voltage switching diode Single Zener diodes 60 V, 1 A PNP low VCEsat transistor 45 V, 500 mA PNP general-purpose transistors Voltage regulator diodes Voltage regulator diodes 45 V, 10 A low VF MEGA Schottky barrier rectifier Voltage regulator diodes Voltage regulator diodes Voltage regulator diodes 50 V, 100 mA NPN/NPN resistor-equipped double transistor; R1 = 47 kΩ, R2 = 47 kΩ PNP general-purpose transistor Voltage regulator diodes 45 V, 100 mA NPN general-purpose transistors 150 mA LED driver in SOT223 Single 3-input NAND gate Voltage regulator diodes 45 V, 500 mA PNP general-purpose transistors 30 V, N-channel Trench MOSFET NPN/NPN matched double transistor 80 V, 500 mA PNP general-purpose transistors Transient Voltage Suppressor Voltage regulator diodes 4-bit dual supply translating transceiver with configurable voltage translation; 3-state 40 V, 1 A very low VF Schottky barrier rectifier 65 V, 100 mA PNP general-purpose transistors 500 mA, 50 V NPN/PNP double resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ Voltage regulator diodes 65 V, 100 mA NPN general-purpose transistors 45 V, 100 mA PNP/PNP matched double transistor General-purpose Schottky diode Low-current voltage regulator diodes 50 V, 500 mA PNP resistor-equipped transistor 45 V, 100 mA NPN general-purpose transistors 60 V, 320 mA dual N-channel Trench MOSFET 20 V, 800 mA dual N-channel Trench MOSFET 400 W Transient Voltage Suppressor Voltage regulator diodes 20 V, P-channel Trench MOSFET 30 V, N-channel Trench MOSFET 30 V, N-channel Trench MOSFET PNP/PNP matched double transistor Schottky barrier diode 80 V, 1 A NPN medium power transistors Voltage regulator diodes Single Zener diodes in a SOD123 package Schottky barrier diode Single Zener diodes in a SOD123 package Schottky barrier diode NPN general purpose transistors Voltage regulator diodes Single Zener diodes Single Zener diodes in a SOD123 package Single Zener diodes Voltage regulator diodes 40 V, 200 mA NPN switching transistor High-speed switching diode NPN/NPN general purpose double transistor Voltage regulator diodes Voltage regulator diodes 20 V, N-channel Trench MOSFET Bidirectional ESD protection diode Voltage regulator diodes 40 V, 200 mA NPN switching transistor Voltage regulator diodes Voltage regulator diodes 80 V, 100 mA NPN/PNP resistor-equipped double transistors Low-current voltage regulator diodes Single Zener diodes Schottky barrier diode 400 W Transient Voltage Suppressor General purpose switching diode Voltage regulator diodes Voltage regulator diodes PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ Voltage regulator diodes Adjustable precision shunt regulators High-speed switching diode High-speed switching diode NPN switching transistor 45 V, 500 mA PNP general-purpose transistors Single Zener diodes in a SOD123 package Voltage regulator diodes 45 V, 1 A NPN medium power transistors Inverter 40 V, 2 A PNP low VCEsat transistor Dual inverter Voltage regulator diodes 300 V, 100 mA NPN high-voltage transistor Single Zener diodes in a SOD123 package Voltage regulator diodes Low-power dual supply translating transceiver; 3-state Voltage regulator diodes Voltage regulator diodes Femtofarad bidirectional ESD protection diode 40 V, 100 mA NPN general-purpose transistor 50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 10 kΩ, R2 = 47 kΩ 20 V, single P-channel Trench MOSFET 65 V, 100 mA PNP general-purpose transistors Low-power D-type flip-flop; positive-edge trigger; 3-state 80 V, 100 mA PNP resistor-equipped transistors High-voltage switching diode PNP medium frequency transistor Voltage regulator diodes Extremely low capacitance unidirectional ESD protection diode array Low-current voltage regulator diodes Voltage regulator diodes Extremely low capacitance unidirectional ESD protection diode array 50 V, 100 mA NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ Voltage regulator diodes Voltage regulator diodes Unidirectional ESD protection diode Voltage regulator diodes 50 V, 15 A low VF Trench MEGA Schottky barrier rectifier NPN high-voltage transistor PNP high-voltage transistor Voltage regulator diodes 50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 47 kΩ, R2 = 47 kΩ and R1 = 2.2 kΩ, R2 = 47 kΩ Low capacitance unidirectional double ESD protection diode Voltage regulator diodes High-speed switching diode Low-power buffer/line driver; 3-state 45 V, 500 mA PNP general-purpose transistors 60 V, P-channel Trench MOSFET Single Zener diodes 80 V, 500 mA PNP general-purpose transistors 20 V NPN low VCEsat transistor Voltage regulator diodes Single Zener diodes 50 V, 100 mA PNP resistor-equipped transistor; R1 = 22 kΩ, R2 = 22 kΩ Single Zener diodes 80 V, 1 A PNP medium power transistors 500 V, 0.25 A PNP high-voltage low VCEsat transistor Voltage regulator diodes PNP high-voltage transistor 50 V, 500 mA PNP resistor-equipped transistor Adjustable precision shunt regulator 20 V, 1 A PNP medium power transistor 45 V, 500 mA NPN general-purpose transistors Low-current voltage regulator diodes ESD protection for high-speed interfaces ESD protection for high-speed interfaces 50 V, 500 mA NPN resistor-equipped transistor 65 V, 100 mA PNP general-purpose transistors Voltage regulator diodes Voltage regulator diodes Zener voltage regulator diodes in a SOD323F package 65 V, 100 mA NPN general-purpose transistors 80 V, 500 mA NPN general-purpose transistors Voltage regulator diodes Medium power Schottky barrier single diode 30 V, 100 mA NPN general-purpose transistor Voltage regulator diodes Voltage regulator diodes NPN Darlington transistor 80 V, 100 mA NPN resistor-equipped transistors 20 V, 1 A low VF Schottky barrier diode 20 V, 2 A P-channel Trench MOSFET Voltage regulator diodes Voltage regulator diodes 65 V, 100 mA PNP general-purpose transistors NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ Voltage regulator diodes Voltage regulator diodes NPN general purpose transistors 100 V, 250 mA Schottky barrier diode High-speed switching diode Voltage regulator diodes Voltage regulator diodes NPN general-purpose transistor 80 V, 100 mA PNP resistor-equipped transistors Voltage regulator diodes Voltage regulator diodes PNP resistor-equipped transistors; R1 = 2.2 kOhm, R2 = open Single USB 2.0 ESD protection to IEC 61000-4-2 level 4 Voltage regulator diodes 400 W Transient Voltage Suppressor ESD protection for high-speed interfaces Voltage regulator diodes Voltage regulator diodes Voltage regulator diodes Voltage regulator diodes High-speed switching diode Voltage regulator diodes Single Zener diodes Voltage regulator diodes Voltage regulator diodes 300 V, 100 mA NPN high-voltage transistor Voltage regulator diodes 45 V, 100 mA NPN/NPN matched double transistor Low-power D-type flip-flop with reset; positive-edge trigger Low-current voltage regulator diodes Quadruple ESD transient voltage suppressor Voltage regulator diodes 40 V; 2 A NPN low VCEsat transistor 40 V low VCEsat NPN/PNP transistor 80 V, 100 mA NPN resistor-equipped transistors 40 V, 2 A PNP low VCEsat transistor 45 V, 100 mA PNP general-purpose transistor PNP high voltage transistor Single Zener diodes 45 V, 500 mA NPN general-purpose transistors Voltage regulator diodes Schottky barrier diode Voltage regulator diodes 45 V, 500 mA NPN general-purpose transistors Single Zener diodes in a SOD123 package NPN high-voltage transistor 20 V, N-channel Trench MOSFET Single Zener diodes in a SOD123 package 45 V, 800 mA NPN general-purpose transistor Single Zener diodes in a SOD123 package Low-current voltage regulator diodes 60 V, 1 A PNP low VCEsat transistor NPN/NPN resistor-equipped transistors; R1 = 47 kOhm, R2 = 22 kOhm 40 V, 200 mA Schottky barrier dual diode Low capacitance bidirectional ESD protection diode in SOD323 Single Zener diodes 100 V, 250 mA Schottky barrier diode Voltage regulator diodes PNP general purpose transistors 45 V, 10 A low VF Trench MEGA Schottky barrier rectifier 45 V, 100 mA NPN/NPN matched double transistor Voltage regulator diodes 80 V, 100 mA NPN resistor-equipped transistors Voltage regulator diodes N-channel 25 V, 0.72 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology Voltage regulator diodes 50 V, 100 mA PNP resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 47 kΩ Voltage regulator diodes 65 V, 100 mA PNP general-purpose transistors 45 V, 15 A low VF Trench MEGA Schottky barrier rectifier Single Zener diodes Voltage regulator diodes Low-current voltage regulator diodes Voltage regulator diodes Voltage regulator diodes Adjustable precision shunt regulators 50 V, 100 mA NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 22 kΩ 60 V, dual N-channel Trench MOSFET Voltage regulator diodes Schottky barrier diode PNP general-purpose double transistors Voltage regulator diodes General-purpose dual Schottky diode Voltage regulator diodes 45 V, 100 mA NPN general-purpose transistors NPN general purpose transistor Voltage regulator diodes 200 mA low Vf MEGA Schottky barrier rectifier Adjustable precision shunt regulators 45 V, 100 mA NPN general-purpose transistors 400 W Transient Voltage Suppressor 80 V, 100 mA NPN resistor-equipped transistors 400 W Transient Voltage Suppressor Voltage regulator diodes Bilateral switch 65 V, 100 mA PNP/PNP general-purpose double transistor Voltage regulator diodes Voltage regulator diodes High-voltage switching diode NPN/PNP resistor-equipped double transistor; R1 = 4.7 kΩ, R2 = 47 kΩ High-speed switching diode Voltage regulator diodes 12 V, P-channel Trench MOSFET Voltage regulator diodes Voltage regulator diodes Adjustable precision shunt regulators 80 V, 1 A NPN medium power transistors Low-current voltage regulator diodes Voltage regulator diodes NPN/PNP general-purpose double transistor 45 V, 500 mA PNP general-purpose transistors NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ 40 V, 200 mA Schottky barrier dual diode Low-power 2-input NAND gate (open drain) 45 V, 1 A NPN medium power transistors 80 V, 1 A PNP power bipolar transistors Single Zener diodes Dual unbuffered inverter 65 V, 100 mA PNP general-purpose transistors Very low VF MEGA Schottky barrier rectifier Voltage regulator diodes 200 mA low VF Schottky barrier rectifier Voltage regulator diodes 40 V, 4 A PNP low VCEsat transistor High-speed switching diode 40 V; 2 A NPN low VCEsat transistor High-speed switching diode Voltage regulator diodes Unidirectional ESD protection diode 30 V, 400 mA N-channel Trench MOSFET Single Zener diodes Voltage regulator diodes Voltage regulator diodes NPN/PNP double Resistor-Equipped Transistor; R1 = 2.2 kΩ, R2 = 47 kΩ 40 V, 1 A NPN low VCEsat transistor Single Zener diodes Extremely low capacitance bidirectional ESD protection diode array Low capacitance bidirectional ESD protection diode in SOD323 45 V, 1 A PNP medium power transistors 45 V, 500 mA NPN general-purpose transistors Voltage regulator diodes Voltage regulator diodes Adjustable precision shunt regulators Voltage regulator diodes Single buffer NPN Darlington transistor Low-current voltage regulator diodes Voltage regulator diodes Single Zener diodes in a SOD123 package Low-current voltage regulator diodes Voltage regulator diodes Voltage regulator diodes Single Zener diodes Voltage regulator diodes 80 V, 100 mA PNP/PNP resistor-equipped double transistors 20 V, single P-channel Trench MOSFET Low leakage switching diode 40 V, 0.5 A low VF MEGA Schottky barrier rectifier 65 V, 100 mA PNP general-purpose transistors N-channel 40 V, 6.7 mΩ, logic level MOSFET in LFPAK33 using NextPower-S3 technology PNP general-purpose transistor Single Zener diodes Single Zener diodes in a SOD123 package 45 V, 500 mA NPN general-purpose transistors NPN Darlington transistor Single Zener diodes in a SOD123 package NPN medium frequency transistor Voltage regulator diodes PNP general purpose transistors Single Zener diodes Voltage regulator diodes High-speed double diode High-speed switching diode 80 V, 100 mA PNP/PNP resistor-equipped double transistors Voltage regulator diodes Voltage regulator diodes Low capacitance bidirectional ESD protection diode 50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 47 kΩ, R2 = 47 kΩ ESD protection for high-speed interfaces Low-current voltage regulator diodes Bidirectional ESD protection diode Voltage regulator diodes PNP general-purpose transistor Single Zener diodes Single Zener diodes in a SOD123 package Single Zener diodes Voltage regulator diodes Voltage regulator diodes 65 V, 100 mA PNP general-purpose transistors 45 V, 800 mA PNP general-purpose transistor 65 V, 100 mA PNP general-purpose transistors Low-current voltage regulator diodes Extremely low capacitance unidirectional ESD protection diode array NPN general-purpose double transistors 50 V, 500 mA PNP resistor-equipped transistor 40 V, 600 mA NPN/PNP general-purpose transistors 20 V, P-channel Trench MOSFET Low capacitance bidirectional ESD protection diode P-channel vertical D-MOS intermediate level FET Single Zener diodes in a SOD123 package Low-power dual Schmitt trigger inverter 80 V, 500 mA NPN general-purpose transistors Single Zener diodes 200 mA very low VF MEGA Schottky barrier rectifier Dual Zener diodes N-channel 30 V, 0.87 mOhm, 300 A level Application Specific MOSFET in SOT1023A enhanced package for UL2595 NPN switching transistor Low-leakage double diode 60 V, N-channel Trench MOSFET 45 V, 100 mA PNP general-purpose transistor NPN/PNP double Resistor-Equipped Transistor; R1 = 2.2 kΩ, R2 = 47 kΩ 65 V, 100 mA NPN/NPN general-purpose transistor 80 V, 100 mA NPN/NPN resistor-equipped double transistor Voltage regulator diodes Single Zener diodes NPN BISS transistor Voltage regulator diodes Voltage regulator diodes 50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 10 kΩ, R2 = 10 kΩ Voltage regulator diodes 40 V, 200 mA PNP switching transistor 80 V, 4 A NPN low VCEsat transistor 50 V, 100 mA PNP resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ 45 V, 500 mA PNP general-purpose transistors High-speed switching diode Voltage regulator diodes High-speed switching double diode Single Zener diodes Schottky barrier diode Low capacitance unidirectional double ESD protection diode 80 V, single N-channel Trench MOSFET 50 V, 100 mA NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 47 kΩ High-speed diode 80 V, 1 A NPN medium power transistors 60 V, N-channel Trench MOSFET NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ Low-leakage double diode Voltage regulator diodes NPN switching transistor Low-current voltage regulator diodes Low-current voltage regulator diodes 20 V, P-channel Trench MOSFET NPN general purpose double transistor Single Zener diodes in a SOD123 package Voltage regulator diodes 20 V, 2 A NPN medium power transistors Single Zener diodes Voltage regulator diodes Voltage regulator diodes PNP general purpose transistors 60 V, 1 A PNP medium power transistors Low-power dual unbuffered inverter General-purpose dual Schottky diode 40 V, 200 mA Schottky barrier diode PNP Darlington transistor 30 V, 200 mA low VF Schottky barrier diode 65 V, 100 mA PNP general-purpose transistors 50 V, 100 mA PNP resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ 80 V, 100 mA NPN/PNP resistor-equipped double transistors Voltage regulator diodes 60 V, dual N-channel Trench MOSFET Voltage regulator diodes NPN general purpose transistor Voltage regulator diodes 65 V, 100 mA PNP/PNP matched double transistor ESD protection for in-vehicle networks Low-current voltage regulator diodes Low-current voltage regulator diodes 80 V, 1 A PNP medium power transistors Schottky barrier diode 30 V, 200 mA Schottky barrier diode Single Zener diodes Single Zener diodes General-purpose dual Schottky diode 45 V, 100 mA PNP/PNP matched double transistor Voltage regulator diodes Voltage regulator diodes Inverter with open-drain output Voltage regulator diodes 240 V, P-channel vertical D-MOS transistor 20 V, 2 A NPN medium power transistors 50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 10 kΩ, R2 = 47 kΩ Voltage regulator diodes Voltage regulator diodes 45 V, 500 mA PNP general-purpose transistors Voltage regulator diodes Voltage regulator diodes NPN general purpose transistors PNP general purpose transistors 45 V, 1 A NPN medium power transistors Voltage regulator diodes Buffer with open-drain output NPN high voltage transistor 50 V, 500 mA PNP resistor-equipped transistor Voltage regulator diodes 45 V, 800 mA PNP general-purpose transistor Transient voltage suppressor in DSN1608-2 for mobile applications Low-power 3-input OR-AND gate Adjustable precision shunt regulator 30 V, 0.5 A very low VF MEGA Schottky barrier rectifier Single Zener diodes 65 V, 100 mA PNP/PNP general-purpose transistor Low-current voltage regulator diodes CAN bus ESD protection diode NPN switching transistor Voltage regulator diodes Voltage regulator diodes Voltage regulator diodes 50 V, 500 mA PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ Single Zener diodes in a SOD123 package 80 V, 1 A NPN medium power transistors Voltage regulator diodes PNP/PNP general purpose double transistor High-voltage switching diode Low-current voltage regulator diodes 80 V, 1 A PNP medium power transistors Voltage regulator diodes Ultra low capacitance unidirectional double ESD protection diode Adjustable precision shunt regulators 50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 47 kΩ, R2 = 47 kΩ 80 V, 4 A PNP low VCEsat (BISS) transistor 60 V, 1 A NPN medium power transistors General-purpose Schottky diode NPN general purpose transistor General-purpose Schottky diode Zener voltage regulator diodes in a SOD323F package Voltage regulator diodes Low capacitance unidirectional fivefold ESD protection diode arrays NPN resistor-equipped transistors; R1 = 2.2 kOhm, R2 = open Voltage regulator diodes NPN/NPN general purpose double transistors 45 V, 500 mA NPN general-purpose transistors NPN/NPN general-purpose double transistor Voltage regulator diodes High-speed switching diode Low-current voltage regulator diodes 40 V, 0.2 A Schottky barrier diode Voltage regulator diodes 12 V, single P-channel Trench MOSFET 50 V, 100 mA NPN/NPN resistor-equipped double transistor; R1 = 2.2 kΩ, R2 = 47 kΩ 45 V, 500 mA PNP general-purpose transistors 80 V, 500 mA PNP general-purpose transistors Voltage regulator diodes Single Zener diodes Single Zener diodes in a SOD123 package 40 V, 0.2 A Schottky barrier diode Voltage regulator diodes PNP general purpose transistors 60 V, 1 A NPN medium power transistors Voltage regulator diodes 20 V, 1 A low VF MEGA Schottky barrier rectifier NPN Darlington transistor ESD protection for high-speed interfaces Voltage regulator diodes 45 V, 500 mA PNP general-purpose transistors Single Zener diodes in a SOD123 package Voltage regulator diodes 80 V, 100 mA NPN resistor-equipped transistors Low-voltage avalanche regulator diodes ESD protection for high-speed interfaces 1-of-2 decoder/demultiplexer Voltage regulator diodes Single Zener diodes Voltage regulator diodes Double ESD protection diode for transient overvoltage suppression High-speed switching diodes Low-current voltage regulator diodes N-channel 30 V, 1.0 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology Voltage regulator diodes 500 V, 0.25 A PNP high-voltage low VCEsat transistor Low-current voltage regulator diodes 50 V, 500 mA NPN general-purpose transistor 20 V, 0.5 A low VF MEGA Schottky barrier rectifier 45 V, 800 mA NPN general-purpose transistor Voltage regulator diodes Extremely low capacitance bidirectional ESD protection diode array Low-current voltage regulator diodes Schottky barrier diode 30 V, N-channel Trench MOSFET Voltage regulator diodes NPN Darlington transistor 30 V, N-channel Trench MOSFET Low-current voltage regulator diodes General purpose diode Single Zener diodes in a SOD123 package 50 V, 500 mA NPN resistor-equipped transistor 50 V, 500 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 4.7 kΩ General-purpose dual Schottky diode ESD protection for differential data lines 45 V, 100 mA NPN general-purpose transistors Single Zener diodes 20 V, 2 A NPN medium power transistor 80 V, 100 mA NPN/NPN resistor-equipped double transistors Voltage regulator diodes High-voltage switching diode 60 V, 1 A NPN/NPN low VCEsat transistor 45 V, 500 mA PNP general-purpose transistors Voltage regulator diodes High-speed switching diode Unidirectional ESD protection for transient voltage suppression Voltage regulator diodes Voltage regulator diodes NPN general purpose transistor 40 V, 200 mA NPN switching transistor 40 V, 0.5 A low VF MEGA Schottky barrier rectifier Voltage regulator diodes PNP general purpose transistors Schottky barrier diode Voltage regulator diodes Low-current voltage regulator diodes Low-current voltage regulator diodes Voltage regulator diodes Low-power 2-input NAND Schmitt trigger Voltage regulator diodes 80 V, 1 A NPN medium power transistors 60 V, 1 A Low VF Schottky barrier rectifier 80 V, 100 mA NPN/NPN resistor-equipped double transistor Voltage regulator diodes Voltage regulator diodes NPN general purpose transistors NPN Darlington transistor PNP general purpose transistors 50 V low VCEsat NPN transistor 60 V, 1 A NPN/NPN low VCEsat transistor Voltage regulator diodes 20 V, single N-channel Trench MOSFET 500 mA, 50 V NPN/NPN double resistor-equipped transistor; R1 = 1 kOhm, R2 = 10 kOhm 50 V, 100 mA NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ Voltage regulator diodes Voltage regulator diodes 60 V, 1 A NPN medium power transistors Voltage regulator diodes Voltage regulator diodes PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ Voltage regulator diodes 150 V, 1 A PNP high-voltage low VCEsat transistor 60 V, 360 mA N-channel Trench MOSFET 200 mA low VF Schottky barrier rectifier High-speed switching diode N-channel TrenchMOS intermediate level FET Low-current voltage regulator diodes 65 V, 100 mA PNP general-purpose transistor NPN/NPN resistor-equipped double transistor; R1 = 2.2 kΩ, R2 = 47 kΩ High-speed switching diode 50 V, 100 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ Single Zener diodes in a SOD123 package 50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 4.7 kΩ, R2 = 47 kΩ 50 V, 100 mA PNP resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ Low-power buffer 30 V, 3 A NPN low VCEsat (BISS) transistor 80 V, 100 mA PNP resistor-equipped transistors Low-leakage diode Adjustable precision shunt regulators Low-current voltage regulator diodes Low-power 2-input multiplexer; inverting Low capacitance bidirectional ESD protection diode 80 V, 1 A PNP power bipolar transistors Voltage regulator diodes Voltage regulator diodes Voltage regulator diodes Single Zener diodes Single Zener diodes Voltage regulator diodes 45 V, 100 mA PNP general-purpose transistor Single Zener diodes 40 V, 200 mA NPN/PNP general-purpose double transistor Voltage regulator diodes 65 V, 100 mA PNP general-purpose transistors 65 V, 100 mA NPN/NPN general-purpose transistor 30 V, N-channel Trench MOSFET NPN switching transistor Voltage regulator diodes Bidirectional ESD protection diode 60 V, 1 A PNP medium power transistor 60 V, 0.2 A very low VF MEGA Schottky barrier rectifier Voltage regulator diodes Schottky barrier single diode Schottky barrier diode Voltage regulator diodes 20 V, 4.1 A P-channel Trench MOSFET Voltage regulator diodes 50 V, 100 mA NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ Low-power D-type transparent latch; 3-state PNP general purpose transistors Extremely low capacitance bidirectional ESD protection diode array ESD protection for high-speed interfaces NPN high voltage transistor Voltage regulator diodes Single Zener diodes in a SOD123 package Bus buffer/line driver; 3-state 30 V, 1 A low VF Schottky barrier rectifier Low capacitance unidirectional double ESD protection diode 20 V, 1 A low VF MEGA Schottky barrier rectifier Voltage regulator diodes Schottky barrier diode Adjustable precision shunt regulator Adjustable precision shunt regulators 50 V, 500 mA PNP resistor-equipped transistor PNP general-purpose double transistors Adjustable precision shunt regulators 45 V, 500 mA PNP general-purpose transistors Voltage regulator diodes NPN/NPN resistor-equipped transistors; R1 = 4.7 kOhm, R2 = open 65 V, 100 mA PNP/PNP general-purpose double transistor Triple high-voltage switching diodes 45 V, 100 mA NPN general-purpose transistors Low-current voltage regulator diodes Voltage regulator diodes Voltage regulator diodes High-speed switching diode Ultra low capacitance unidirectional ESD protection diode Voltage regulator diodes Voltage regulator diodes Single Zener diodes in a SOD123 package 200 mA low VF Schottky barrier rectifier Low-current voltage regulator diodes High-speed switching diode Single Zener diodes in a SOD123 package Single 2-input AND gate High-speed switching diode Single Zener diodes in a SOD123 package 80 V, 1 A NPN medium power transistors 150 V, 1 A PNP high-voltage low VCEsat transistor Voltage regulator diodes 80 V, 500 mA PNP general-purpose transistors Adjustable precision shunt regulators Quadruple ESD transient voltage suppressor Single Zener diodes 40 V, 600 mA PNP switching transistor Low-power 3-input AND gate Low-power 3-input EXCLUSIVE-OR gate Voltage regulator diodes Transient Voltage Suppressor Voltage regulator diodes 50 V, 3 A PNP low VCEsat transistor Schottky barrier diode 20 V, dual N-channel Trench MOSFET Voltage regulator diodes Voltage regulator diodes 500 V, 0.25 A PNP high-voltage low VCEsat transistor NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ Single Zener diodes Voltage regulator diodes Voltage regulator diodes 65 V, 100 mA NPN general-purpose transistors 45 V, 500 mA PNP general-purpose transistors 80 V, 1 A PNP power bipolar transistors 30 V, 2 A low VF Schottky barrier rectifier NPN general-purpose double transistors 4-bit dual supply translating transceiver; 3-state Voltage regulator diodes 45 V, 100 mA NPN general-purpose transistors Voltage regulator diodes Voltage regulator diodes 400 W Transient Voltage Suppressor Single Zener diodes Single 3-input NOR gate Single D-type flip-flop; positive-edge trigger 45 V, 500 mA PNP general-purpose transistors Voltage regulator diodes 30 V, 0.5 A low VF Schottky barrier rectifier Voltage regulator diodes NPN general-purpose transistor 400 W Transient Voltage Suppressor Voltage regulator diodes Voltage regulator diodes Ultra low capacitance double rail-to-rail ESD protection diode Voltage regulator diodes Ultra low capacitance bidirectional ESD protection diode Voltage regulator diodes Single Zener diodes Bus buffer/line driver; 3-state 80 V, 1 A PNP medium power transistor Single Zener diodes in a SOD123 package NPN/PNP resistor-equipped double transistor; R1 = 47 kΩ, R2 = 47 kΩ ESD protection for high-speed interfaces Low-current voltage regulator diodes 50 V, 100 mA NPN general-purpose transistor 50 V, 100 mA NPN/NPN resistor-equipped double transistor; R1 = 10 kΩ, R2 = 47 kΩ General-purpose Schottky diode Voltage regulator diodes Inverter 50 V, 100 mA NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 22 kΩ PNP/PNP matched double transistor 45 V, 100 mA NPN/PNP general-purpose transistor Voltage regulator diodes Voltage regulator diodes Voltage regulator diodes Low-current voltage regulator diodes Single Zener diodes High-speed switching diode NPN high voltage transistor Voltage regulator diodes Voltage regulator diodes 80 V, 100 mA PNP resistor-equipped transistors Voltage regulator diodes High-speed switching diode Voltage regulator diodes 50 V; 3 A NPN low VCEsat transistor Single Schmitt trigger buffer Voltage regulator diodes Voltage regulator diodes Voltage regulator diodes Voltage regulator diodes 1 A very low VF MEGA Schottky barrier rectifier NPN general purpose transistor 50 V, 500 mA NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ Low-leakage switching diode 45 V, 500 mA NPN general-purpose transistors Single Zener diodes in a SOD123 package 40 V low VCEsat PNP transistor Single Schmitt-trigger inverter High-voltage switching diode Voltage regulator diodes N-channel 40 V, 1.4 mΩ, 240 A logic level MOSFET in LFPAK56 using NextPower-S3 technology High-voltage switching diode Voltage regulator diodes Low-current voltage regulator diodes Voltage regulator diodes Voltage regulator diodes Voltage regulator diodes 45 V, 100 mA NPN general-purpose transistors Voltage regulator diodes 40 V; 2 A PNP low VCEsat transistor Low-current voltage regulator diodes 45 V, 500 mA NPN general-purpose transistors 50 V, 500 mA NPN general-purpose transistor Single Zener diodes 50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 47 kΩ 30 V, 100 mA NPN general-purpose transistor 20 V, single N-channel Trench MOSFET Low-leakage double diode Low capacitance bidirectional ESD protection diode Low-power configurable gate with voltage-level translator Low-power dual buffer with open-drain output 45 V, 500 mA NPN general-purpose transistors NPN/PNP general purpose double transistor 80 V, 1 A PNP medium power transistors 45 V, 500 mA NPN general-purpose transistors 60 V, 0.2 A very low VF Schottky barrier rectifier Low-power dual Schmitt trigger Single Zener diodes ESD protection diode in SOD523 package 80 V, 1 A PNP medium power transistors Voltage regulator diodes 80 V, 1 A PNP medium power transistors ESD protection for in-vehicle networks 50 V, 100 mA NPN general-purpose transistors 45 V, 500 mA NPN general-purpose transistors Single Zener diodes in a SOD123 package Single Zener diodes 50 V, 100 mA PNP resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ 50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 10 kΩ, R2 = 10 kΩ Bus buffer/line driver; 3-state Single Zener diodes in a SOD123 package General-purpose dual Schottky diode Voltage regulator diodes Extremely low capacitance unidirectional ESD protection diode array Double ESD protection diode in SOT23 package Voltage regulator diodes Low-current voltage regulator diodes PNP switching transistor High-voltage switching diode Voltage regulator diodes N-channel 30 V, 0.87 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology Low-power 3-input OR-gate Voltage regulator diodes 45 V, 500 mA PNP general-purpose transistors 45 V, 500 mA NPN general-purpose transistors Low-current voltage regulator diodes Single Zener diodes 80 V, 100 mA NPN/NPN resistor-equipped double transistor 45 V, 500 mA PNP general-purpose transistors Low-current voltage regulator diodes NPN resistor-equipped transistors; R1 = 10 kOhm, R2 = open 80 V, 1 A PNP medium power transistors Single Zener diodes in a SOD123 package PNP general purpose transistor Voltage regulator diodes Voltage regulator diodes 50 V, 100 mA PNP/PNP resistor-equipped double transistors; R1 = 10 kΩ, R2 = 10 kΩ Common-mode EMI filter for differential channels with integrated ESD protection Voltage regulator diodes 1 A low VF MEGA Schottky barrier rectifier Voltage regulator diodes Voltage regulator diodes 60 V, 1 A NPN low VCEsat (BISS) transistor Single Zener diodes Voltage regulator diodes Voltage regulator diodes Voltage regulator diodes 80 V, 100 mA PNP resistor-equipped transistors 65 V, 100 mA PNP general-purpose transistors 200 mA low VF Schottky barrier rectifier Low-current voltage regulator diodes High-voltage switching diode Single Zener diodes in a SOD123 package Voltage regulator diodes Single Zener diodes 50 V, 100 mA NPN/NPN resistor-equipped double transistor; R1 = 10 kΩ, R2 = 10 kΩ NPN general purpose transistors Low-power Schmitt trigger 500 V, 250 mA PNP high-voltage low VCEsat transistor 45 V, 500 mA NPN general-purpose transistors 60 V, 1 A NPN medium power transistors Single Zener diodes in a SOD123 package 20 V, N-channel Trench MOSFET 80 V, 100 mA NPN/PNP resistor-equipped double transistors 45 V, 100 mA PNP/PNP general-purpose double transistor Voltage regulator diodes 60 V, 2 A low VF Schottky barrier rectifier Voltage regulator diodes Low-power D-type flip-flop; positive-edge trigger Adjustable precision shunt regulators 40 V, 0.5 A very low VF MEGA Schottky barrier rectifier Buffers with open-drain outputs 80 V, 500 mA NPN general-purpose transistors Voltage regulator diodes 80 V, 500 mA NPN general-purpose transistors General-purpose Schottky diode 45 V, 100 mA NPN general-purpose transistors Low-current voltage regulator diodes 45 V, 1 A PNP medium power transistors Low-current voltage regulator diodes 100 V, 8 A low leakage current Schottky barrier rectifier Voltage regulator diodes Voltage regulator diodes 40 V low VCEsat PNP transistor 30 V, 0.5 A low VF Schottky barrier rectifier 40 V, 0.5 A very low VF Schottky barrier rectifier 50 V, 100 mA NPN general-purpose transistors Voltage regulator diodes NPN medium frequency transistor 80 V, 1 A NPN/NPN matched double transistors Single Zener diodes Voltage regulator diodes 10 Ω single-pole double-throw analog switch Adjustable precision shunt regulator Voltage regulator diodes Schottky barrier diode Single Zener diodes in a SOD123 package 80 V, 1 A PNP/PNP matched double transistors 40 V, 200 mA Schottky barrier dual diode 80 V, 100 mA NPN/NPN resistor-equipped double transistors Inverters with open-drain outputs Voltage regulator diodes Voltage regulator diodes Voltage regulator diodes 50 V, 100 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ Voltage regulator diodes Voltage regulator diodes 50 V, 100 mA PNP/PNP resistor-equipped double transistor; R1 = 2.2 kΩ, R2 = 47 kΩ Adjustable precision shunt regulator Voltage regulator diodes Low-power configurable multiple function gate 80 V, 100 mA PNP/PNP resistor-equipped double transistors Voltage regulator diodes Voltage regulator diodes 80 V, 100 mA NPN resistor-equipped transistors 30 V, N-channel Trench MOSFET Bus buffer/line driver; 3-state Single Zener diodes in a SOD123 package Voltage regulator diodes Voltage regulator diodes 60 V, 1 A NPN medium power transistors PNP general purpose transistors Voltage regulator diodes 65 V, 100 mA PNP general-purpose transistors 80 V, 100 mA NPN resistor-equipped transistors N-channel LFPAK 40 V 2.8 mΩ standard level MOSFET Bidirectional ESD protection diode Single Zener diodes in a SOD123 package Voltage regulator diodes Low capacitance bidirectional ESD protection diode 50 V, 500 mA NPN resistor-equipped transistor Bus buffer/line driver; 3-state 45 V, 500 mA NPN general-purpose transistors Single Zener diodes Schottky barrier diode Low-leakage diode 45 V, 100 mA PNP general-purpose transistor High-speed switching double diode Single Zener diodes Voltage regulator diodes Dual Schottky barrier diode 65 V, 100 mA PNP general-purpose transistors Single Zener diodes in a SOD123 package Single high-speed switching diode Very low capacitance bidirectional ESD protection diode 40 V, 600 mA NPN switching transistor 60 V, 300 mA dual N-channel Trench MOSFET Low-power configurable multiple function gate NPN/PNP resistor-equipped double transistor; R1 = 47 kΩ, R2 = 47 kΩ and R1 = 2.2 kΩ, R2 = 47 kΩ PNP/PNP double Resistor-Equipped Transistor; R1 = 10 kΩ, R2 = 47 kΩ Voltage regulator diodes 20 V, single P-channel Trench MOSFET Voltage regulator diodes Voltage regulator diodes 40 V N-channel Trench MOSFET Single Zener diodes 50 V, 3 A PNP low VCEsat transistor 80 V, 1 A NPN power bipolar transistors Voltage regulator diodes NPN general purpose transistors 50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 22 kΩ, R2 = 22 kΩ 45 V, 500 mA NPN general-purpose transistors 80 V, 500 mA PNP general-purpose transistors General-purpose dual Schottky diode PNP switching transistor PNP general purpose transistors 20 V, 0.5 A low VF MEGA Schottky barrier rectifier Schottky barrier single diode Single Zener diodes in a SOD123 package 50 V, 180 mA P-channel Trench MOSFET Single Zener diodes in a SOD123 package 30 V, 230 mA P-channel Trench MOSFET 30 V, 4.7 A NPN low VCEsat transistor Zener voltage regulator diodes NPN general purpose transistors Voltage regulator diodes 30 V, 3 A PNP low VCEsat (BISS) transistor Voltage regulator diodes Voltage regulator diodes N-channel 30 V, 2.4 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology Voltage regulator diodes Voltage regulator diodes Low-current voltage regulator diodes Schottky barrier diode 45 V, 100 mA NPN/NPN general-purpose transistor 50 V, 100 mA PNP resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ 45 V, 500 mA PNP general-purpose transistors High-speed switching diode 80 V, 1 A NPN medium power transistors Voltage regulator diodes 40 V, 4 A NPN low VCEsat transistor Voltage regulator diodes Voltage regulator diodes Voltage regulator diodes 50 V, 500 mA PNP resistor-equipped transistor Voltage regulator diodes Voltage regulator diodes Voltage regulator diodes Low-current voltage regulator diodes 60 V, 3 A PNP low VCEsat (BISS) transistor Low capacitance unidirectional ESD protection diodes Low-power configurable gate with voltage-level translator 40 V, 1 A NPN low VCEsat transistor 65 V, 100 mA NPN general-purpose transistors Voltage regulator diodes PNP general purpose transistor 80 V, 1 A NPN medium power transistors Voltage regulator diodes Low-current voltage regulator diodes Voltage regulator diodes Voltage regulator diodes 50 V, 500 mA NPN resistor-equipped transistor N-channel 40 V, 1.1 mΩ, 280 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology High-voltage switching diode 80 V, 1 A NPN medium power transistors NPN high-voltage transistor N-channel 40 V, 2.8 mΩ, 160 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology Single Zener diodes 65 V, 100 mA NPN general-purpose transistors Ultra low capacitance double rail-to-rail ESD protection diode 40 V, 200 mA NPN/PNP general-purpose double transistor Very low capacitance bidirectional ESD protection diode 50 V, 100 mA NPN/NPN Resistor-Equipped double Transistor; R1 = 4.7 kΩ, R2 = open Voltage regulator diodes Low-current voltage regulator diodes 40 V, 4 A PNP low VCEsat transistor Voltage regulator diodes 50 V, 500 mA NPN resistor-equipped transistor 65 V, 100 mA NPN general-purpose transistors Voltage regulator diodes Schottky barrier diode Voltage regulator diodes NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ Schottky barrier diode Single Zener diodes in a SOD123 package 50 V, 100 mA NPN general-purpose transistor 80 V, 100 mA NPN resistor-equipped transistors Single Zener diodes Low-power buffer/line driver; 3-state 45 V, 500 mA PNP general-purpose transistors Voltage regulator diodes PNP general purpose transistors Voltage regulator diodes NPN general purpose transistors Single Zener diodes in a SOD123 package Voltage regulator diodes Voltage regulator diodes 50 V, 100 mA PNP resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ 30 V, 3 A PNP low VCEsat (BISS) transistor Voltage regulator diodes Single Zener diodes High surge current unidirectional double ESD protection diodes Single Zener diodes in a SOD123 package 30 V, N-channel Trench MOSFET 60 V, 1 A PNP medium power transistors 300 V, 100 mA NPN high-voltage transistor Voltage regulator diodes Voltage regulator diodes Voltage regulator diodes Voltage regulator diodes Voltage regulator diodes NPN general purpose transistor 40 V, 200 mA Schottky barrier dual diode Low-power inverting buffer/line driver; 3-state Voltage regulator diodes Low-power dual buffer Single Zener diodes in a SOD123 package Voltage regulator diodes 50 V, 100 mA PNP resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ 50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 22 kΩ, R2 = 22 kΩ Voltage regulator diodes ESD protection for high-speed interfaces 45 V, 100 mA NPN general-purpose transistors High-voltage switching diode 80 V, 1 A PNP medium power transistors Voltage regulator diodes Voltage regulator diodes NPN/NPN matched double transistor Voltage regulator diodes Single Zener diodes Voltage regulator diodes N-channel 30 V, 4.2 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology N-channel 30 V, 3.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology Single inverter 65 V, 100 mA PNP/PNP general-purpose transistor Voltage regulator diodes 40 V low VCEsat PNP transistor 80 V, 100 mA PNP/PNP resistor-equipped double transistors Voltage regulator diodes Voltage regulator diodes 50 V, 100 mA NPN/NPN resistor-equipped double transistor; R1 = 10 kΩ, R2 = 47 kΩ Single Zener diodes Voltage regulator diodes 65 V, 100 mA PNP general-purpose transistors 50 V, 100 mA PNP/PNP resistor-equipped double transistor; R1 = 47 kΩ, R2 = 47 kΩ NPN general purpose transistor Single Zener diodes Low-current voltage regulator diodes Single Zener diodes in a SOD123 package 60 V, 1 A Low VF Schottky barrier rectifier Low-current voltage regulator diodes Low-power X-tal driver with enable and internal resistor; 3-state 60 V, 10 A low VF MEGA Schottky barrier rectifier Voltage regulator diodes Voltage regulator diodes Single Zener diodes Low capacitance bidirectional ESD protection diode 80 V, 1 A NPN power bipolar transistors 65 V, 100 mA PNP/PNP general-purpose transistor 40V Low VCEsat NPN Transistor Voltage regulator diodes NPN/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 4.7 kΩ 45 V, 15 A low VF MEGA Schottky barrier rectifier 45 V, 1 A PNP medium power transistors 80 V, 1 A PNP medium power transistors Voltage regulator diodes NPN high-voltage transistor 45 V, 100 mA NPN general-purpose transistors 60 V, N-channel Trench MOSFET 50 V, 100 mA PNP resistor-equipped transistor; R1 = 22 kΩ, R2 = 22 kΩ Dual non-inverting Schmitt trigger with 5 V tolerant input Schottky barrier diodes 80 V, 100 mA PNP resistor-equipped transistors Triple high-voltage switching diodes PNP medium frequency transistor 50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 2.2 kΩ, R2 = open 20 V, 2 A PNP medium power transistors Voltage regulator diodes Voltage regulator diodes Low-current voltage regulator diodes Voltage regulator diodes LIN-bus ESD protection diode Voltage regulator diodes Voltage regulator diodes 45 V, 500 mA PNP general-purpose transistors Single Zener diodes Voltage regulator diodes High-speed switching diode Single Zener diodes 80 V, 100 mA NPN resistor-equipped transistors Voltage regulator diodes Voltage regulator diodes Voltage regulator diodes Voltage regulator diodes NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ Voltage regulator diodes Voltage regulator diodes Voltage regulator diodes Voltage regulator diodes Voltage regulator diodes Single Zener diodes Single Zener diodes 50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 10 kΩ, R2 = 47 kΩ PNP high-voltage transistor Voltage regulator diodes Voltage regulator diodes 60 V, single N-channel Trench MOSFET Schottky barrier double diode NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ Single Zener diodes in a SOD123 package 50 V, 500 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 10 kΩ PNP general purpose transistor Voltage regulator diodes 60 V, 320 mA dual N-channel Trench MOSFET 65 V, 100 mA PNP general-purpose transistors 50 V, 100 mA NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ Voltage regulator diodes 80 V, 100 mA PNP resistor-equipped transistors 60 V, 1 A NPN medium power transistors Ultra low capacitance bidirectional ESD protection diode High surge current unidirectional double ESD protection diodes 60V, 600 mA, PNP switching transistor High-speed double diode Single Zener diodes General-purpose Schottky diode 45 V, 500 mA NPN general-purpose transistors 60 V, 1 A NPN low VCEsat BISS transistor General-purpose Schottky diode 50 V, 500 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 4.7 kΩ Voltage regulator diodes 60 V, 350 mA N-channel Trench MOSFET 50 V; 3 A NPN low VCEsat transistor Voltage regulator diodes Voltage regulator diodes PNP general purpose transistor NPN general purpose double transistor Voltage regulator diodes 60 V, 1 A NPN low VCEsat (BISS) transistor 60 V, 1 A NPN medium power transistors General-purpose Schottky diode Voltage regulator diodes High-voltage switching diode Single Zener diodes in a SOD123 package Voltage regulator diodes Single Zener diodes in a SOD123 package Voltage regulator diodes Adjustable precision shunt regulators Low capacitance bidirectional ESD protection diode 60 V, 1 A very low VF Schottky barrier rectifier NPN general purpose double transistor 500 V, 0.25 A PNP high-voltage low VCEsat transistor Voltage regulator diodes 45 V, 1 A NPN medium power transistors Single Zener diodes General-purpose dual Schottky diode Voltage regulator diodes Voltage regulator diodes Low-power Schmitt trigger inverter N-channel 30 V, 2.4 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology Dual USB 2.0 integrated ESD protection Low-current voltage regulator diodes 50V, 15 A low VF Trench MEGA Schottky barrier rectifier Voltage regulator diodes Voltage regulator diodes Voltage regulator diodes 80 V, 100 mA NPN/PNP resistor-equipped double transistors N-channel TrenchMOS standard level FET Voltage regulator diodes 30 V, 2 A low VF Schottky barrier rectifier Voltage regulator diodes 20 V, 1 A PNP medium power transistor 45 V, 500 mA PNP general-purpose transistors N-channel LFPAK 40 V 3.3 mΩ standard level MOSFET 65 V, 100 mA PNP general-purpose transistors Single Zener diodes Voltage regulator diodes ESD protection for high-speed interfaces 30 V, 200 mA dual N-channel Trench MOSFET Low-power 1-of-2 decoder/demultiplexer Voltage regulator diodes 45 V, 100 mA NPN general-purpose transistors 80 V, 500 mA NPN general-purpose transistors 60 V, 3 A NPN low VCEsat transistor Voltage regulator diodes 80 V, 1 A NPN medium power transistors 30 V, N-channel Trench MOSFET Voltage regulator diodes Voltage regulator diodes Voltage regulator diodes Voltage regulator diodes Voltage regulator diodes Schottky barrier diode NPN/NPN double Resistor-Equipped Transistor (RET); R1= 4.7 kΩ, R2 = 47 kΩ Low-current voltage regulator diodes 60 V, 1 A NPN medium power transistor Low-power 2-input NAND gate N-channel TrenchMOS intermediate level FET 50 V, 100 mA NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open 20 mA LED driver in SOT457 80 V, 100 mA NPN/PNP resistor-equipped double transistors 50 V, 20 mA NPN resistor-equipped transistor; R1 = 100 kΩ, R2 = 100 kΩ 50 V, 3 A PNP low VCEsat transistor Low-power inverter with open-drain output High-speed double diode 45 V, 500 mA PNP general-purpose transistors Voltage regulator diodes 60 V, 2 A low VF Schottky barrier rectifier 45 V, 100 mA NPN general-purpose transistors Low-current voltage regulator diodes Voltage regulator diodes 80 V, 1 A NPN medium power transistors Voltage regulator diodes Voltage regulator diodes Voltage regulator diodes 80 V, 100 mA PNP resistor-equipped transistors Single Zener diodes in a SOD123 package Voltage regulator diodes 20 V low VCEsat PNP transistor 80 V, 1 A PNP medium power transistors Voltage regulator diodes Low-current voltage regulator diodes PNP resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ Voltage regulator diodes Single high-speed switching diode Voltage regulator diodes Voltage regulator diodes Single Zener diodes in a SOD123 package Voltage regulator diodes Voltage regulator diodes Single Zener diodes in a SOD123 package Single Zener diodes Low-power configurable multiple function gate Single Zener diodes 65 V, 100 mA NPN/PNP general-purpose double transistor PNP general purpose transistor 1 A low VF MEGA Schottky barrier rectifier 50 V, 500 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 4.7 kΩ General-purpose Schottky diode Voltage regulator diodes Schottky barrier diode 50 V, 500 mA PNP general-purpose transistor Dual buffer gate 50 V, 100 mA NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 47 kΩ Low-current voltage regulator diodes Voltage regulator diodes Voltage regulator diodes NPN/PNP general-purpose double transistor Voltage regulator diodes Voltage regulator diodes 60 V, 1 A very low VF Schottky barrier rectifier 400 W Transient Voltage Suppressor 40 V, 1 A low VF Schottky barrier rectifier 45 V, 500 mA PNP general-purpose transistors Voltage regulator diodes Fivefold ESD protection diode arrays Voltage regulator diodes NPN general purpose transistors N-channel 30 V, 2.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology 80 V, 100 mA NPN/NPN resistor-equipped double transistors High-voltage switching diodes Single Zener diodes in a SOD123 package Voltage regulator diodes General-purpose dual Schottky diode 80 V, 1 A PNP medium power transistors 80 V, 1 A NPN medium power transistors Low capacitance unidirectional double ESD protection diode 30 V, N-channel Trench MOSFET Low-current voltage regulator diodes 50 V, 100 mA NPN/NPN resistor-equipped double transistor; R1 = 4.7 kΩ, R2 = 47 kΩ 20 V, N-channel Trench MOSFET 80 V, 1 A NPN medium power transistors Low-power dual inverter 80 V, 1 A NPN medium power transistors Ultra low capacitance double rail-to-rail ESD protection diode Unidirectional ESD protection for transient voltage suppression 50 V, 500 mA PNP resistor-equipped transistor Voltage regulator diodes 80 V, 1 A NPN/NPN matched double transistors 50 V, 500 mA PNP resistor-equipped transistor PNP BISS transistor High-speed switching diodes High-speed switching diode Voltage regulator diodes Voltage regulator diodes Voltage regulator diodes 40 V, 200 mA NPN switching transistor 45 V, 100 mA PNP/PNP matched double transistor 50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 4.7 kΩ N-channel 30 V, 1.2 mΩ, 250 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology 50 V, 100 mA NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 47 kΩ 30 V, 100 mA NPN general-purpose transistor PNP/PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = 22 kΩ 80 V, 1 A PNP medium power transistors Voltage regulator diodes Voltage regulator diodes 45 V, 100 mA NPN/PNP general-purpose double transistor Low capacitance unidirectional double ESD protection diode NPN general-purpose transistor 65 V, 100 mA PNP general-purpose transistors 50 V, 100 mA NPN/NPN resistor-equipped double transistor; R1= 4.7 kΩ, R2 = 47 kΩ 50 V, 100 mA NPN/NPN resistor-equipped double transistor; R1 = 10 kΩ, R2 = 10 kΩ Single Zener diodes 40 V, 1 A low VF MEGA Schottky barrier rectifier

Manufacturer: Nexperia

Catalog

Part	Package / Case	Mounting Type	Grade	Frequency - Transition	Operating Temperature	Supplier Device Package	Qualification	Current - Collector (Ic) (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Power - Max [Max]	Transistor Type
Nexperia PMBT3906,235	SC-59, SOT-23-3, TO-236-3	Surface Mount	Automotive	250 MHz	150 °C	TO-236AB	AEC-Q101	200 mA	400 mV	100	50 nA	40 V	250 mW	PNP

Catalog

Key Features

• Total power dissipation: ≤ 250 mW

• Two tolerance series: ± 2 % and approximately ± 5 %

• Working voltage range: nominal 1.8 V to 51 V

• Specified at a low test current (50 μA), ideal for low bias and portable battery-powered applications

• BZX8450-B11-Q to -C51-Q: Intentional minor rise of leakage current for optimized fast switching and noise reduction [AN90031]

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: Ptot≤ 400 mW

• Small plastic package suitable for surface mounted design

• Wide variety of voltage ranges: nominal 2.4 V to 36 V (E24 range)

• Tolerance approximately ± 2 %

• PDZ5.1B - 10B: Very low dynamic impedances at low currents, very low leakage current, hard breakdown knee

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: Ptot≤ 590 mW

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Small plastic package suitable for surface-mounted design

• Low differential resistance

• Tight tolerance: ± 2 %

• High current

• Three current gain selections

• High power dissipation capability

• Exposed heatsink for excellent thermal and electrical conductivity

• AEC-Q101 qualified

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: ≤ 250 mW

• Two tolerance series: ± 2 % and approximately ± 5 %

• Working voltage range: nominal 1.8 V to 51 V

• Specified at a low test current (50 μA), ideal for low bias and portable battery-powered applications

• BZX8450-B11 to -C51: Intentional minor rise of leakage current for optimized fast switching and noise reduction [AN90031].

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: Ptot≤ 590 mW

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Small plastic package suitable for surface-mounted design

• Low differential resistance

• Tight tolerance: ± 2 %

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Wide supply voltage range:

• VCC(A): 1.2 V to 5.5 V

• VCC(B): 1.2 V to 5.5 V

• High noise immunity

• Maximum data rates:

• 420 Mbps (3.3 V to 5.0 V translation)

• 210 Mbps (translate to 3.3 V))

• 140 Mbps (translate to 2.5 V)

• 75 Mbps (translate to 1.8 V)

• 60 Mbps (translate to 1.5 V)

• Suspend mode

• Latch-up performance exceeds 100 mA per JESD 78 Class II

• ±24 mA output drive (VCC= 3.0 V)

• Inputs accept voltages up to 5.5 V

• Low power consumption: 16 μA maximum ICC

• IOFFcircuitry provides partial Power-down mode operation

• Complies with JEDEC standards:

• JESD8-7 (1.2 V to 1.95 V)

• JESD8-5 (1.8 V to 2.7 V)

• JESD8C (2.7 V to 3.6 V)

• JESD36 (4.5 V to 5.5 V)

• ESD protection:

• HBM: ANSI/ESDA/JEDEC JS-001 class 3A exceeds 4000 V

• CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

• Multiple package options

• Specified from -40 °C to +85 °C and -40 °C to +125 °C

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

• CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• JESD8-12 (0.8 V to 1.3 V)

• JESD8-11 (0.9 V to 1.65 V)

• JESD8-7 (1.65 V to 1.95 V)

• JESD8-5 (2.3 V to 2.7 V)

• JESD8C (2.7 V to 3.6 V)

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Total power dissipation: ≤ 300 mW

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Low differential resistance

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• JESD8-7 (1.65 V to 1.95 V)

• JESD8-5 (2.3 V to 2.7 V)

• JESD8C (2.7 V to 3.6 V)

• JESD36 (4.5 V to 5.5 V)

• High current

• Three current gain selections

• High power dissipation capability

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Wide supply voltage range from 0.8 V to 3.6 V

• CMOS low power dissipation

• High noise immunity

• Overvoltage tolerant inputs to 3.6 V

• Low noise overshoot and undershoot < 10 % of VCC

• IOFFcircuitry provides partial power-down mode operation

• Latch-up performance exceeds 100 mA per JESD 78 Class II Level B

• Low static power consumption; ICC= 0.9 µA (maximum)

• Complies with JEDEC standards:

• JESD8-12 (0.8 V to 1.3 V)

• JESD8-11 (0.9 V to 1.65 V)

• JESD8-7 (1.2 V to 1.95 V)

• JESD8-5 (1.8 V to 2.7 V)

• JESD8-B (2.7 V to 3.6 V)

• ESD protection:

• HBM: ANSI/ESDA/JEDEC JS-001 class 3A exceeds 5000 V

• CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

• Multiple package options

• Specified from -40 °C to +85 °C and -40 °C to +125 °C

• Total power dissipation: ≤ 250 mW

• Two tolerance series: ± 2 % and approximately ± 5 %

• Working voltage range: nominal 1.8 V to 51 V

• Specified at a low test current (50 μA), ideal for low bias and portable battery-powered applications

• BZX8450-B11-Q to -C51-Q: Intentional minor rise of leakage current for optimized fast switching and noise reduction [AN90031]

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: ≤300 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• General-purpose transistors

• SMD plastic packages

• Three different gain selections

• Specified from -40 °C to +85 °C and from -40 °C to +125 °C

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Low current (max. 100 mA)

• Low voltage (max. 65 V)

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Low current (max. 100 mA)

• Low voltage (max. 65 V)

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Total power dissipation: ≤ 300 mW

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Low differential resistance

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• HBM: ANSI/ESDA/JEDEC JS-001 class 3B exceeds 8000 V

• CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

• JESD8-7 (1.65 V to 1.95 V)

• JESD8-5 (2.3 V to 2.7 V)

• JESD8B/JESD36 (2.7 V to 3.6 V).

• JESD8-7 (1.65 V to 1.95 V)

• JESD8-5 (2.3 V to 2.7 V)

• JESD8C (2.7 V to 3.6 V)

• JESD36 (4.5 V to 5.5 V)

• High current

• Three current gain selections

• High power dissipation capability

• Exposed heatsink for excellent thermal and electrical conductivity

• Leadless very small SMD plastic package with medium power capability

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• JESD8-7 (1.65 V to 1.95 V)

• JESD8-5 (2.3 V to 2.7 V)

• JESD8-B/JESD36 (2.7 V to 3.6 V).

• Forward current: IF≤ 1 A

• Reverse voltage: VR≤ 40 V

• Low forward voltage typ. VF= 540 mV

• Low reverse current typ. IR= 30 µA

• Small SMD plastic package

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: Ptot≤ 400 mW

• Small plastic package suitable for surface mounted design

• Wide variety of voltage ranges: nominal 2.4 V to 36 V (E24 range)

• Tolerance approximately ± 2 %

• PDZ5.1B-Q - 10B-Q: Very low dynamic impedances at low currents, very low leakage current, hard breakdown knee

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• JESD8-7 (1.65 V to 1.95 V)

• JESD8-5 (2.3 V to 2.7 V)

• JESD8C (2.7 V to 3.6 V)

• JESD36 (4.5 V to 5.5 V)

• Total power dissipation: ≤ 300 mW

• Two tolerance series: ± 2 % and approximately ± 5 %

• Working voltage range: nominal 1.8 V to 51 V

• Specified at a low test current (50 μA), ideal for low bias and portable battery-powered applications

• BZX38450-B11 to -C51: Intentional minor rise of leakage current for optimized fast switching and noise reduction [AN90031]

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Low current (max. 100 mA)

• Low voltage (max. 65 V)

• High current (max. 600 mA)

• Low voltage (max. 40 V)

• Total power dissipation: Ptot≤ 400 mW

• Small plastic package suitable for surface mounted design

• Wide variety of voltage ranges: nominal 2.4 V to 36 V (E24 range)

• Tolerance approximately ± 2 %

• PDZ5.1B - 10B: Very low dynamic impedances at low currents, very low leakage current, hard breakdown knee

• High collector current capability ICand ICM

• Three current gain selections

• High power dissipation capability

• AEC-Q101 qualified

• Total power dissipation: Ptot≤ 400 mW

• Small plastic package suitable for surface mounted design

• Wide variety of voltage ranges: nominal 2.4 V to 36 V (E24 range)

• Tolerance approximately ± 2 %

• PDZ5.1B-Q - 10B-Q: Very low dynamic impedances at low currents, very low leakage current, hard breakdown knee

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: ≤ 250 mW

• Two tolerance series: ± 2 % and approximately ± 5 %

• Working voltage range: nominal 1.8 V to 51 V

• Specified at a low test current (50 μA), ideal for low bias and portable battery-powered applications

• BZX8450-B11-Q to -C51-Q: Intentional minor rise of leakage current for optimized fast switching and noise reduction [AN90031]

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: Ptot≤ 400 mW

• Small plastic package suitable for surface mounted design

• Wide variety of voltage ranges: nominal 2.4 V to 36 V (E24 range)

• Tolerance approximately ± 2 %

• PDZ5.1B-Q - 10B-Q: Very low dynamic impedances at low currents, very low leakage current, hard breakdown knee

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Low current (max. 100 mA)

• Low voltage (max. 65 V)

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• JESD8-7 (1.65 V to 1.95 V)

• JESD8-5 (2.3 V to 2.7 V)

• JESD8C (2.7 V to 3.6 V)

• JESD36 (4.5 V to 5.5 V)

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: ≤ 250 mW

• Two tolerance series: ± 2 % and approximately ± 5 %

• Working voltage range: nominal 1.8 V to 51 V

• Specified at a low test current (50 μA), ideal for low bias and portable battery-powered applications

• BZX8450-B11-Q to -C51-Q: Intentional minor rise of leakage current for optimized fast switching and noise reduction [AN90031]

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Total power dissipation: Ptot≤ 400 mW

• Small plastic package suitable for surface mounted design

• Wide variety of voltage ranges: nominal 2.4 V to 36 V (E24 range)

• Tolerance approximately ± 2 %

• PDZ5.1B - 10B: Very low dynamic impedances at low currents, very low leakage current, hard breakdown knee

• Wide supply voltage range from 0.8 V to 3.6 V

• CMOS low power dissipation

• High noise immunity

• Overvoltage tolerant inputs to 3.6 V

• Low noise overshoot and undershoot < 10 % of VCC

• IOFFcircuitry provides partial Power-down mode operation

• Low static power consumption; ICC= 0.9 µA (maximum)

• Latch-up performance exceeds 100 mA per JESD 78 Class II

• Complies with JEDEC standards:

• JESD8-12 (0.8 V to 1.3 V)

• JESD8-11 (0.9 V to 1.65 V)

• JESD8-7 (1.65 V to 1.95 V)

• JESD8-5 (2.3 V to 2.7 V)

• JESD8C (2.7 V to 3.6 V)

• ESD protection:

• HBM: ANSI/ESDA/JEDEC JS-001 class 3A exceeds 5000 V

• CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

• Multiple package options

• Specified from -40 °C to +85 °C and -40 °C to +125 °C

• HBM: ANSI/ESDA/JEDEC JS-001 class 3A exceeds 5000 V

• CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

• Total power dissipation: ≤ 590 mW

• Two tolerance series: ±2 % and approximately ±5 %

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Small plastic package suitable for surface-mounted design

• Low differential resistance

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: ≤300 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: Ptot≤ 400 mW

• Small plastic package suitable for surface mounted design

• Wide variety of voltage ranges: nominal 2.4 V to 36 V (E24 range)

• Tolerance approximately ± 2 %

• PDZ5.1B-Q - 10B-Q: Very low dynamic impedances at low currents, very low leakage current, hard breakdown knee

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: Ptot≤ 590 mW

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Small plastic package suitable for surface-mounted design

• Low differential resistance

• Tight tolerance: ± 2 %

• Total power dissipation: ≤ 300 mW

• Two tolerance series: ± 2 % and approximately ± 5 %

• Working voltage range: nominal 1.8 V to 51 V

• Specified at a low test current (50 μA), ideal for low bias and portable battery-powered applications

• BZX38450-B11-Q to -C51-Q: Intentional minor rise of leakage current for optimized fast switching and noise reduction [AN90031]

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• High collector current capability ICand ICM

• Three current gain selections

• High power dissipation capability

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: ≤ 300 mW

• Two tolerance series: ± 2 % and approximately ± 5 %

• Working voltage range: nominal 1.8 V to 51 V

• Specified at a low test current (50 μA), ideal for low bias and portable battery-powered applications

• BZX38450-B11 to -C51: Intentional minor rise of leakage current for optimized fast switching and noise reduction [AN90031]

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Total power dissipation: Ptot≤ 400 mW

• Small plastic package suitable for surface mounted design

• Wide variety of voltage ranges: nominal 2.4 V to 36 V (E24 range)

• Tolerance approximately ± 2 %

• PDZ5.1B - 10B: Very low dynamic impedances at low currents, very low leakage current, hard breakdown knee

• Total power dissipation: Ptot≤ 400 mW

• Small plastic package suitable for surface mounted design

• Wide variety of voltage ranges: nominal 2.4 V to 36 V (E24 range)

• Tolerance approximately ± 2 %

• PDZ5.1B - 10B: Very low dynamic impedances at low currents, very low leakage current, hard breakdown knee

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Total power dissipation: ≤300 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: ≤ 300 mW

• Two tolerance series: ± 2 % and approximately ± 5 %

• Working voltage range: nominal 1.8 V to 51 V

• Specified at a low test current (50 μA), ideal for low bias and portable battery-powered applications

• BZX38450-B11-Q to -C51-Q: Intentional minor rise of leakage current for optimized fast switching and noise reduction [AN90031]

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Wide supply voltage range from 1.65 V to 5.5 V

• High noise immunity

• ±24 mA output drive (VCC= 3.0 V)

• CMOS low power dissipation

• Direct interface with TTL levels

• Unlimited rise and fall times

• Overvoltage tolerant inputs to 5.5 V

• IOFFcircuitry provides partial Power-down mode operation

• Latch-up performance exceeds 250 mA

• Complies with JEDEC standard:

• JESD8-7 (1.65 V to 1.95 V)

• JESD8-5 (2.3 V to 2.7 V)

• JESD8C (2.7 V to 3.6 V)

• JESD36 (4.5 V to 5.5 V)

• ESD protection:

• HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

• CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

• Multiple package options

• Specified from -40 °C to +85 °C and -40 °C to +125 °C.

• 100 mA output current capability

• Built-in bias resistors

• Simplifies circuit design

• Reduces component count

• Reduces pick and place costs

• Total power dissipation: Ptot≤ 400 mW

• Small plastic package suitable for surface mounted design

• Wide variety of voltage ranges: nominal 2.4 V to 36 V (E24 range)

• Tolerance approximately ± 2 %

• PDZ5.1B - 10B: Very low dynamic impedances at low currents, very low leakage current, hard breakdown knee

• Total power dissipation: Ptot≤ 590 mW

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Small plastic package suitable for surface-mounted design

• Low differential resistance

• Tight tolerance: ± 2 %

• Total power dissipation: Ptot≤ 590 mW

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Small plastic package suitable for surface-mounted design

• Low differential resistance

• Tight tolerance: ± 2 %

• HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

• CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

• High current

• Three current gain selections

• High power dissipation capability

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: Ptot≤ 590 mW

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Small plastic package suitable for surface-mounted design

• Low differential resistance

• Tight tolerance: ± 2 %

• General-purpose transistors

• SMD plastic packages

• Three different gain selections

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Wide supply voltage range from 1.65 V to 5.5 V

• High noise immunity

• Overvoltage tolerant inputs to 5.5 V

• Complies with JEDEC standard:

• JESD8-7 (1.65 V to 1.95 V)

• JESD8-5 (2.3 V to 2.7 V)

• JESD8C (2.7 V to 3.6 V)

• JESD36 (4.5 V to 5.5 V)

• ±24 mA output drive (VCC= 3.0 V)

• CMOS low power dissipation

• Latch-up performance exceeds 250 mA

• IOFFcircuitry provides partial Power-down mode operation

• Direct interface with TTL levels

• ESD protection:

• HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

• CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

• Multiple package options

• Specified from -40 °C to +85 °C and -40 °C to +125 °C

• Total power dissipation: ≤ 250 mW

• Two tolerance series: ± 2 % and approximately ± 5 %

• Working voltage range: nominal 1.8 V to 51 V

• Specified at a low test current (50 μA), ideal for low bias and portable battery-powered applications

• BZX8450-B11 to -C51: Intentional minor rise of leakage current for optimized fast switching and noise reduction [AN90031].

• Total power dissipation: Ptot≤ 400 mW

• Small plastic package suitable for surface mounted design

• Wide variety of voltage ranges: nominal 2.4 V to 36 V (E24 range)

• Tolerance approximately ± 2 %

• PDZ5.1B-Q - 10B-Q: Very low dynamic impedances at low currents, very low leakage current, hard breakdown knee

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• JESD8-12 (0.8 V to 1.3 V)

• JESD8-11 (0.9 V to 1.65 V)

• JESD8-7 (1.2 V to 1.95 V)

• JESD8-5 (1.8 V to 2.7 V)

• JESD8-B (2.7 V to 3.6 V)

• Wide supply voltage range from 1.1 V to 3.6 V

• CMOS low power dissipation

• High noise immunity

• Complies with JEDEC standards:

• JESD8-7 (1.2 V to 1.95 V)

• JESD8-5 (1.8 V to 2.7 V)

• JESD8-B (2.7 V to 3.6 V)

• Wide supply voltage range:

• VCC(A): 1.1 V to 3.6 V

• VCC(Y): 1.1 V to 3.6 V

• Low static power consumption; ICC= 0.9 µA (maximum)

• Each port operates over the full 1.1 V to 3.6 V power supply range

• Latch-up performance exceeds 100 mA per JESD 78 Class II Level B

• Overvoltage tolerant inputs to 3.6 V

• Low noise overshoot and undershoot < 10 % of VCC

• IOFFcircuitry provides partial Power-down mode operation

• ESD protection:

• HBM: ANSI/ESDA/JEDEC JS-001 class 3A exceeds 5000 V

• CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

• Multiple package options

• Specified from -40 °C to +85 °C and -40 °C to +125 °C

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: ≤ 300 mW

• Two tolerance series: ± 2 % and approximately ± 5 %

• Working voltage range: nominal 1.8 V to 51 V

• Specified at a low test current (50 μA), ideal for low bias and portable battery-powered applications

• BZX38450-B11-Q to -C51-Q: Intentional minor rise of leakage current for optimized fast switching and noise reduction [AN90031]

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• 500 Mbit/s (1.8 V to 3.3 V translation)

• 320 Mbit/s (< 1.8 V to 3.3 V translation)

• 320 Mbit/s (translate to 2.5 V or 1.8 V)

• 280 Mbit/s (translate to 1.5 V)

• 240 Mbit/s (translate to 1.2 V)

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: Ptot≤ 400 mW

• Small plastic package suitable for surface mounted design

• Wide variety of voltage ranges: nominal 2.4 V to 36 V (E24 range)

• Tolerance approximately ± 2 %

• PDZ5.1B - 10B: Very low dynamic impedances at low currents, very low leakage current, hard breakdown knee

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Total power dissipation: ≤ 250 mW

• Two tolerance series: ± 2 % and approximately ± 5 %

• Working voltage range: nominal 1.8 V to 51 V

• Specified at a low test current (50 μA), ideal for low bias and portable battery-powered applications

• BZX8450-B11 to -C51: Intentional minor rise of leakage current for optimized fast switching and noise reduction [AN90031].

• High collector current capability ICand ICM

• Three current gain selections

• High power dissipation capability

• AEC-Q101 qualified

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Total power dissipation: Ptot≤ 400 mW

• Small plastic package suitable for surface mounted design

• Wide variety of voltage ranges: nominal 2.4 V to 36 V (E24 range)

• Tolerance approximately ± 2 %

• PDZ5.1B-Q - 10B-Q: Very low dynamic impedances at low currents, very low leakage current, hard breakdown knee

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• HBM: ANSI/ESDA/JEDEC JS-001 class 3A exceeds 5000 V

• CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

• High current

• Three current gain selections

• High power dissipation capability

• Exposed heatsink for excellent thermal and electrical conductivity

• AEC-Q101 qualified

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Total power dissipation: Ptot≤ 590 mW

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Small plastic package suitable for surface-mounted design

• Low differential resistance

• Tight tolerance: ± 2 %

• Total power dissipation: ≤ 300 mW

• Two tolerance series: ± 2 % and approximately ± 5 %

• Working voltage range: nominal 1.8 V to 51 V

• Specified at a low test current (50 μA), ideal for low bias and portable battery-powered applications

• BZX38450-B11-Q to -C51-Q: Intentional minor rise of leakage current for optimized fast switching and noise reduction [AN90031]

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: ≤ 250 mW

• Two tolerance series: ± 2 % and approximately ± 5 %

• Working voltage range: nominal 1.8 V to 51 V

• Specified at a low test current (50 μA), ideal for low bias and portable battery-powered applications

• BZX8450-B11-Q to -C51-Q: Intentional minor rise of leakage current for optimized fast switching and noise reduction [AN90031]

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• High current

• Three current gain selections

• High power dissipation capability

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• B: approximately ±5 %

• B1, B2, B3: approximately ±2 %

• Total power dissipation: ≤ 250 mW

• Two tolerance series: ± 2 % and approximately ± 5 %

• Working voltage range: nominal 1.8 V to 51 V

• Specified at a low test current (50 μA), ideal for low bias and portable battery-powered applications

• BZX8450-B11 to -C51: Intentional minor rise of leakage current for optimized fast switching and noise reduction [AN90031].

• Wide supply voltage range from 1.65 V to 5.5 V

• Overvoltage tolerant inputs to 5.5 V

• High noise immunity

• CMOS low power dissipation

• IOFFcircuitry provides partial Power-down mode operation

• ±24 mA output drive (VCC= 3.0 V)

• Latch-up performance exceeds 250 mA

• Direct interface with TTL levels

• Complies with JEDEC standard:

• JESD8-7 (1.65 V to 1.95 V)

• JESD8-5 (2.3 V to 2.7 V)

• JESD8-B/JESD36 (2.7 V to 3.6 V)

• ESD protection:

• HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

• CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

• Multiple package options

• Specified from -40 °C to +85 °C and -40 °C to +125 °C.

• Total power dissipation: ≤ 250 mW

• Two tolerance series: ± 2 % and approximately ± 5 %

• Working voltage range: nominal 1.8 V to 51 V

• Specified at a low test current (50 μA), ideal for low bias and portable battery-powered applications

• BZX8450-B11-Q to -C51-Q: Intentional minor rise of leakage current for optimized fast switching and noise reduction [AN90031]

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

• CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Total power dissipation: Ptot≤ 400 mW

• Small plastic package suitable for surface mounted design

• Wide variety of voltage ranges: nominal 2.4 V to 36 V (E24 range)

• Tolerance approximately ± 2 %

• PDZ5.1B-Q - 10B-Q: Very low dynamic impedances at low currents, very low leakage current, hard breakdown knee

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: ≤ 250 mW

• Two tolerance series: ± 2 % and approximately ± 5 %

• Working voltage range: nominal 1.8 V to 51 V

• Specified at a low test current (50 μA), ideal for low bias and portable battery-powered applications

• BZX8450-B11-Q to -C51-Q: Intentional minor rise of leakage current for optimized fast switching and noise reduction [AN90031]

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• B: approximately ±5 %

• B1, B2, B3: approximately ±2 %

• Low current (max. 100 mA)

• Low voltage (max. 65 V)

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Total power dissipation: ≤300 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• High collector current capability ICand ICM

• Three current gain selections

• High power dissipation capability

• Total power dissipation: ≤ 250 mW

• Two tolerance series: ± 2 % and approximately ± 5 %

• Working voltage range: nominal 1.8 V to 51 V

• Specified at a low test current (50 μA), ideal for low bias and portable battery-powered applications

• BZX8450-B11-Q to -C51-Q: Intentional minor rise of leakage current for optimized fast switching and noise reduction [AN90031]

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Total power dissipation: Ptot≤ 590 mW

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Small plastic package suitable for surface-mounted design

• Low differential resistance

• Tight tolerance: ± 2 %

• Total power dissipation: ≤ 300 mW

• Two tolerance series: ± 2 % and approximately ± 5 %

• Working voltage range: nominal 1.8 V to 51 V

• Specified at a low test current (50 μA), ideal for low bias and portable battery-powered applications

• BZX38450-B11-Q to -C51-Q: Intentional minor rise of leakage current for optimized fast switching and noise reduction [AN90031]

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Very low dynamic impedance at low currents: approximately 5 % of conventional series

• Hard breakdown knee

• Low noise: approximately 10 % of conventional series

• Total power dissipation: max. 250 mW

• Small tolerances of VZ

• Working voltage range: nominal 5.00 to 6.80 V

• Non-repetitive peak reverse power dissipation: maximal 30 W at 150 °C

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: ≤ 300 mW

• Two tolerance series: ± 2 % and approximately ± 5 %

• Working voltage range: nominal 1.8 V to 51 V

• Specified at a low test current (50 μA), ideal for low bias and portable battery-powered applications

• BZX38450-B11-Q to -C51-Q: Intentional minor rise of leakage current for optimized fast switching and noise reduction [AN90031]

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• High current

• Three current gain selections

• High power dissipation capability

• AEC-Q101 qualified

• High collector current capability ICand ICM

• Three current gain selections

• High power dissipation capability

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• High collector current capability ICand ICM

• Three current gain selections

• High power dissipation capability

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• HBM: ANSI/ESDA/JEDEC JS-001 class 3A exceeds 5000 V

• CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• HBM: ANSI/ESDA/JEDEC JS-001 class 3A exceeds 5000 V

• CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

• Total power dissipation: ≤ 250 mW

• Two tolerance series: ± 2 % and approximately ± 5 %

• Working voltage range: nominal 1.8 V to 51 V

• Specified at a low test current (50 μA), ideal for low bias and portable battery-powered applications

• BZX8450-B11 to -C51: Intentional minor rise of leakage current for optimized fast switching and noise reduction [AN90031].

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• JESD8-7 (1.65 V to 1.95 V)

• JESD8-5 (2.3 V to 2.7 V)

• JESD8C (2.7 V to 3.6 V)

• JESD36 (4.5 V to 5.5 V)

• General-purpose transistors

• SMD plastic packages

• Three different gain selections

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: Ptot≤ 590 mW

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Small plastic package suitable for surface-mounted design

• Low differential resistance

• Tight tolerance: ± 2 %

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• High collector current capability ICand ICM

• Three current gain selections

• High power dissipation capability

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Low current (max. 100 mA)

• Low voltage (max. 65 V)

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Total power dissipation: ≤ 250 mW

• Two tolerance series: ± 2 % and approximately ± 5 %

• Working voltage range: nominal 1.8 V to 51 V

• Specified at a low test current (50 μA), ideal for low bias and portable battery-powered applications

• BZX8450-B11 to -C51: Intentional minor rise of leakage current for optimized fast switching and noise reduction [AN90031].

• Total power dissipation: Ptot≤ 400 mW

• Small plastic package suitable for surface mounted design

• Wide variety of voltage ranges: nominal 2.4 V to 36 V (E24 range)

• Tolerance approximately ± 2 %

• PDZ5.1B - 10B: Very low dynamic impedances at low currents, very low leakage current, hard breakdown knee

• Total power dissipation: Ptot≤ 590 mW

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Small plastic package suitable for surface-mounted design

• Low differential resistance

• Tight tolerance: ± 2 %

• Total power dissipation: ≤ 300 mW

• Two tolerance series: ± 2 % and approximately ± 5 %

• Working voltage range: nominal 1.8 V to 51 V

• Specified at a low test current (50 μA), ideal for low bias and portable battery-powered applications

• BZX38450-B11 to -C51: Intentional minor rise of leakage current for optimized fast switching and noise reduction [AN90031]

• High collector current capability ICand ICM

• Three current gain selections

• High power dissipation capability

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• HBM: ANSI/ESDA/JEDEC JS-001 class 3B exceeds 8000 V

• CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

• JESD8-12 (0.8 V to 1.3 V)

• JESD8-11 (0.9 V to 1.65 V)

• JESD8-7 (1.65 V to 1.95 V)

• JESD8-5 (2.3 V to 2.7 V)

• JESD8C (2.7 V to 3.6 V)

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Total power dissipation: ≤300 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• JESD8-7 (1.65 V to 1.95 V)

• JESD8-5 (2.3 V to 2.7 V)

• JESD8C (2.7 V to 3.6 V)

• JESD36 (4.5 V to 5.5 V)

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: Ptot≤ 590 mW

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Small plastic package suitable for surface-mounted design

• Low differential resistance

• Tight tolerance: ± 2 %

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• General-purpose transistors

• SMD plastic packages

• Three different gain selections

• JESD8-7 (1.65 V to 1.95 V)

• JESD8-5 (2.3 V to 2.7 V)

• JESD8C (2.7 V to 3.6 V)

• JESD36 (4.5 V to 5.5 V)

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Specified from -40 °C to +85 °C and from -40 °C to +125 °C

• Low current (max. 100 mA)

• Low voltage (max. 65 V)

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: ≤ 250 mW

• Two tolerance series: ± 2 % and approximately ± 5 %

• Working voltage range: nominal 1.8 V to 51 V

• Specified at a low test current (50 μA), ideal for low bias and portable battery-powered applications

• BZX8450-B11 to -C51: Intentional minor rise of leakage current for optimized fast switching and noise reduction [AN90031].

• General-purpose transistors

• SMD plastic packages

• Three different gain selections

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• High collector current capability ICand ICM

• Three current gain selections

• High power dissipation capability

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: Ptot≤ 400 mW

• Small plastic package suitable for surface mounted design

• Wide variety of voltage ranges: nominal 2.4 V to 36 V (E24 range)

• Tolerance approximately ± 2 %

• PDZ5.1B - 10B: Very low dynamic impedances at low currents, very low leakage current, hard breakdown knee

• Total power dissipation: Ptot≤ 400 mW

• Small plastic package suitable for surface mounted design

• Wide variety of voltage ranges: nominal 2.4 V to 36 V (E24 range)

• Tolerance approximately ± 2 %

• PDZ5.1B-Q - 10B-Q: Very low dynamic impedances at low currents, very low leakage current, hard breakdown knee

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: ≤ 300 mW

• Two tolerance series: ± 2 % and approximately ± 5 %

• Working voltage range: nominal 1.8 V to 51 V

• Specified at a low test current (50 μA), ideal for low bias and portable battery-powered applications

• BZX38450-B11-Q to -C51-Q: Intentional minor rise of leakage current for optimized fast switching and noise reduction [AN90031]

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: Ptot≤ 400 mW

• Small plastic package suitable for surface mounted design

• Wide variety of voltage ranges: nominal 2.4 V to 36 V (E24 range)

• Tolerance approximately ± 2 %

• PDZ5.1B-Q - 10B-Q: Very low dynamic impedances at low currents, very low leakage current, hard breakdown knee

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• High collector current capability ICand ICM

• Three current gain selections

• High power dissipation capability

• AEC-Q101 qualified

• For 74AHC1G04: CMOS level

• For 74AHCT1G04: TTL level

• Wide supply voltage range from 1.65 V to 5.5 V

• Overvoltage tolerant inputs to 5.5 V

• High noise immunity

• ±24 mA output drive (VCC= 3.0 V)

• CMOS low power dissipation

• Direct interface with TTL levels

• IOFFcircuitry provides partial Power-down mode operation

• Latch-up performance exceeds 250 mA

• Complies with JEDEC standard:

• JESD8-7 (1.65 V to 1.95 V)

• JESD8-5 (2.3 V to 2.7 V)

• ESD protection:

• HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

• CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

• Multiple package options

• Specified from −40 °C to +85 °C and −40 °C to +125 °C.

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• JESD8-7 (1.2 V to 1.95 V)

• JESD8-5 (1.8 V to 2.7 V)

• JESD8-B (2.7 V to 3.6 V)

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Low current (max. 100 mA)

• Low voltage (max. 65 V)

• HBM: ANSI/ESDA/JEDEC JS-001 class 3A exceeds 5000 V

• CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Total power dissipation: ≤ 250 mW

• Two tolerance series: ± 2 % and approximately ± 5 %

• Working voltage range: nominal 1.8 V to 51 V

• Specified at a low test current (50 μA), ideal for low bias and portable battery-powered applications

• BZX8450-B11 to -C51: Intentional minor rise of leakage current for optimized fast switching and noise reduction [AN90031].

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Average forward current: IF(AV)≤ 15 A

• Reverse voltage: VR≤ 50 V

• Low forward voltage

• Low leakage current due to Trench MEGA Schottky technology

• High power capability due to clip-bonding technology and heat sink

• Small and thin SMD plastic package, typical height 0.78 mm

• AEC-Q101 qualified

• HBM: ANSI/ESDA/JEDEC JS-001 class 3A exceeds 5000 V

• CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

• Total power dissipation: Ptot≤ 400 mW

• Small plastic package suitable for surface mounted design

• Wide variety of voltage ranges: nominal 2.4 V to 36 V (E24 range)

• Tolerance approximately ± 2 %

• PDZ5.1B - 10B: Very low dynamic impedances at low currents, very low leakage current, hard breakdown knee

• Total power dissipation: Ptot≤ 590 mW

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Small plastic package suitable for surface-mounted design

• Low differential resistance

• Tight tolerance: ± 2 %

• Total power dissipation: Ptot≤ 590 mW

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Small plastic package suitable for surface-mounted design

• Low differential resistance

• Tight tolerance: ± 2 %

• High collector current capability ICand ICM

• Three current gain selections

• High power dissipation capability

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: ≤ 300 mW

• Two tolerance series: ± 2 % and approximately ± 5 %

• Working voltage range: nominal 1.8 V to 51 V

• Specified at a low test current (50 μA), ideal for low bias and portable battery-powered applications

• BZX38450-B11 to -C51: Intentional minor rise of leakage current for optimized fast switching and noise reduction [AN90031]

• Low current (max. 100 mA)

• Low voltage (max. 65 V)

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Low current (max. 100 mA)

• Low voltage (max. 65 V)

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Total power dissipation: ≤300 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• HBM: ANSI/ESDA/JEDEC JS-001 class 3A exceeds 5000 V

• CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

• Total power dissipation: ≤ 300 mW

• Two tolerance series: ± 2 % and approximately ± 5 %

• Working voltage range: nominal 1.8 V to 51 V

• Specified at a low test current (50 μA), ideal for low bias and portable battery-powered applications

• BZX38450-B11 to -C51: Intentional minor rise of leakage current for optimized fast switching and noise reduction [AN90031]

• Total power dissipation: Ptot≤ 400 mW

• Small plastic package suitable for surface mounted design

• Wide variety of voltage ranges: nominal 2.4 V to 36 V (E24 range)

• Tolerance approximately ± 2 %

• PDZ5.1B-Q - 10B-Q: Very low dynamic impedances at low currents, very low leakage current, hard breakdown knee

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Total power dissipation: ≤ 300 mW

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Low differential resistance

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: ≤ 250 mW

• Two tolerance series: ± 2 % and approximately ± 5 %

• Working voltage range: nominal 1.8 V to 51 V

• Specified at a low test current (50 μA), ideal for low bias and portable battery-powered applications

• BZX8450-B11 to -C51: Intentional minor rise of leakage current for optimized fast switching and noise reduction [AN90031].

• Total power dissipation: Ptot≤ 400 mW

• Small plastic package suitable for surface mounted design

• Wide variety of voltage ranges: nominal 2.4 V to 36 V (E24 range)

• Tolerance approximately ± 2 %

• PDZ5.1B - 10B: Very low dynamic impedances at low currents, very low leakage current, hard breakdown knee

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Low current (max. 100 mA)

• Low voltage (max. 65 V)

• Total power dissipation: Ptot≤ 590 mW

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Small plastic package suitable for surface-mounted design

• Low differential resistance

• Tight tolerance: ± 2 %

• Total power dissipation: ≤ 250 mW

• Two tolerance series: ± 2 % and approximately ± 5 %

• Working voltage range: nominal 1.8 V to 51 V

• Specified at a low test current (50 μA), ideal for low bias and portable battery-powered applications

• BZX8450-B11-Q to -C51-Q: Intentional minor rise of leakage current for optimized fast switching and noise reduction [AN90031]

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• General-purpose transistors

• SMD plastic packages

• Three different gain selections

• General-purpose transistors

• SMD plastic packages

• Three different gain selections

• Total power dissipation: ≤300 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

• CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Total power dissipation: ≤300 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• High collector current capability ICand ICM

• Three current gain selections

• High power dissipation capability

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: ≤ 250 mW

• Two tolerance series: ± 2 % and approximately ± 5 %

• Working voltage range: nominal 1.8 V to 51 V

• Specified at a low test current (50 μA), ideal for low bias and portable battery-powered applications

• BZX8450-B11-Q to -C51-Q: Intentional minor rise of leakage current for optimized fast switching and noise reduction [AN90031]

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• HBM: ANSI/ESDA/JEDEC JS-001 class 3A exceeds 5000 V

• CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

• High collector current capability ICand ICM

• Three current gain selections

• High power dissipation capability

• AEC-Q101 qualified

• Total power dissipation: Ptot≤ 400 mW

• Small plastic package suitable for surface mounted design

• Wide variety of voltage ranges: nominal 2.4 V to 36 V (E24 range)

• Tolerance approximately ± 2 %

• PDZ5.1B-Q - 10B-Q: Very low dynamic impedances at low currents, very low leakage current, hard breakdown knee

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Wide supply voltage range from 1.65 V to 5.5 V

• Overvoltage tolerant inputs to 5.5 V

• High noise immunity

• ±24 mA output drive (VCC= 3.0 V)

• CMOS low power dissipation

• Latch-up performance exceeds 250 mA

• Complies with JEDEC standard no. 8-1A

• ESD protection:

• HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

• CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

• Multiple package options

• Specified from -40 °C to +85 °C and -40 °C to +125 °C

• Low current (max. 100 mA)

• Low voltage (max. 65 V)

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Total power dissipation: Ptot≤ 590 mW

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Small plastic package suitable for surface-mounted design

• Low differential resistance

• Tight tolerance: ± 2 %

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Total power dissipation: ≤ 300 mW

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Low differential resistance

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• High current

• Three current gain selections

• High power dissipation capability

• Exposed heatsink for excellent thermal and electrical conductivity

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Wide supply voltage range from 1.65 V to 5.5 V

• Overvoltage tolerant inputs to 5.5 V

• High noise immunity

• ±24 mA output drive (VCC= 3.0 V)

• CMOS low power dissipation

• Latch-up performance exceeds 250 mA

• IOFFcircuitry provides partial Power-down mode operation

• Direct interface with TTL levels

• Complies with JEDEC standard:

• JESD8-7 (1.65 V to 1.95 V)

• JESD8-5 (2.3 V to 2.7 V)

• JESD8C (2.7 V to 3.6 V)

• JESD36 (4.5 V to 5.5 V)

• ESD protection:

• HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

• CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

• Multiple package options

• Specified from -40 °C to +85 °C and -40 °C to +125 °C

• Total power dissipation: ≤ 300 mW

• Two tolerance series: ± 2 % and approximately ± 5 %

• Working voltage range: nominal 1.8 V to 51 V

• Specified at a low test current (50 μA), ideal for low bias and portable battery-powered applications

• BZX38450-B11-Q to -C51-Q: Intentional minor rise of leakage current for optimized fast switching and noise reduction [AN90031]

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: ≤ 250 mW

• Two tolerance series: ± 2 % and approximately ± 5 %

• Working voltage range: nominal 1.8 V to 51 V

• Specified at a low test current (50 μA), ideal for low bias and portable battery-powered applications

• BZX8450-B11 to -C51: Intentional minor rise of leakage current for optimized fast switching and noise reduction [AN90031].

• Total power dissipation: Ptot≤ 400 mW

• Small plastic package suitable for surface mounted design

• Wide variety of voltage ranges: nominal 2.4 V to 36 V (E24 range)

• Tolerance approximately ± 2 %

• PDZ5.1B - 10B: Very low dynamic impedances at low currents, very low leakage current, hard breakdown knee

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Low current (max. 100 mA)

• Low voltage (max. 65 V)

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: Ptot≤ 400 mW

• Small plastic package suitable for surface mounted design

• Wide variety of voltage ranges: nominal 2.4 V to 36 V (E24 range)

• Tolerance approximately ± 2 %

• PDZ5.1B - 10B: Very low dynamic impedances at low currents, very low leakage current, hard breakdown knee

• Total power dissipation: Ptot≤ 400 mW

• Small plastic package suitable for surface mounted design

• Wide variety of voltage ranges: nominal 2.4 V to 36 V (E24 range)

• Tolerance approximately ± 2 %

• PDZ5.1B-Q - 10B-Q: Very low dynamic impedances at low currents, very low leakage current, hard breakdown knee

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Total power dissipation: ≤ 250 mW

• Two tolerance series: ± 2 % and approximately ± 5 %

• Working voltage range: nominal 1.8 V to 51 V

• Specified at a low test current (50 μA), ideal for low bias and portable battery-powered applications

• BZX8450-B11-Q to -C51-Q: Intentional minor rise of leakage current for optimized fast switching and noise reduction [AN90031]

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: Ptot≤ 400 mW

• Small plastic package suitable for surface mounted design

• Wide variety of voltage ranges: nominal 2.4 V to 36 V (E24 range)

• Tolerance approximately ± 2 %

• PDZ5.1B-Q - 10B-Q: Very low dynamic impedances at low currents, very low leakage current, hard breakdown knee

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: Ptot≤ 400 mW

• Small plastic package suitable for surface mounted design

• Wide variety of voltage ranges: nominal 2.4 V to 36 V (E24 range)

• Tolerance approximately ± 2 %

• PDZ5.1B - 10B: Very low dynamic impedances at low currents, very low leakage current, hard breakdown knee

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Low current (max. 100 mA)

• Low voltage (max. 65 V)

• Low current (max. 100 mA)

• Low voltage (max. 65 V)

• Total power dissipation: ≤ 250 mW

• Two tolerance series: ± 2 % and approximately ± 5 %

• Working voltage range: nominal 1.8 V to 51 V

• Specified at a low test current (50 μA), ideal for low bias and portable battery-powered applications

• BZX8450-B11 to -C51: Intentional minor rise of leakage current for optimized fast switching and noise reduction [AN90031].

• JESD8-12 (0.8 V to 1.3 V)

• JESD8-11 (0.9 V to 1.65 V)

• JESD8-7 (1.2 V to 1.95 V)

• JESD8-5 (1.8 V to 2.7 V)

• JESD8-B (2.7 V to 3.6 V)

• Total power dissipation: Ptot≤ 400 mW

• Small plastic package suitable for surface mounted design

• Wide variety of voltage ranges: nominal 2.4 V to 36 V (E24 range)

• Tolerance approximately ± 2 %

• PDZ5.1B - 10B: Very low dynamic impedances at low currents, very low leakage current, hard breakdown knee

• Total power dissipation: Ptot≤ 590 mW

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Small plastic package suitable for surface-mounted design

• Low differential resistance

• Tight tolerance: ± 2 %

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Total power dissipation: ≤ 300 mW

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Low differential resistance

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: Ptot≤ 590 mW

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Small plastic package suitable for surface-mounted design

• Low differential resistance

• Tight tolerance: ± 2 %

• High collector current capability ICand ICM

• Three current gain selections

• High power dissipation capability

• Total power dissipation: ≤ 250 mW

• Two tolerance series: ± 2 % and approximately ± 5 %

• Working voltage range: nominal 1.8 V to 51 V

• Specified at a low test current (50 μA), ideal for low bias and portable battery-powered applications

• BZX8450-B11 to -C51: Intentional minor rise of leakage current for optimized fast switching and noise reduction [AN90031].

• Total power dissipation: ≤ 300 mW

• Two tolerance series: ± 2 % and approximately ± 5 %

• Working voltage range: nominal 1.8 V to 51 V

• Specified at a low test current (50 μA), ideal for low bias and portable battery-powered applications

• BZX38450-B11 to -C51: Intentional minor rise of leakage current for optimized fast switching and noise reduction [AN90031]

• High collector current capability ICand ICM

• Two current gain selections

• High power dissipation capability

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: Ptot≤ 400 mW

• Small plastic package suitable for surface mounted design

• Wide variety of voltage ranges: nominal 2.4 V to 36 V (E24 range)

• Tolerance approximately ± 2 %

• PDZ5.1B - 10B: Very low dynamic impedances at low currents, very low leakage current, hard breakdown knee

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• High current

• Three current gain selections

• High power dissipation capability

• Exposed heatsink for excellent thermal and electrical conductivity

• AEC-Q101 qualified

• Wide supply voltage range from 0.8 V to 3.6 V

• CMOS low power dissipation

• High noise immunity

• Overvoltage tolerant inputs to 3.6 V

• Low noise overshoot and undershoot < 10 % of VCC

• Latch-up performance exceeds 100 mA per JESD 78 Class II

• Low static power consumption; ICC= 0.9 μA (maximum)

• Complies with JEDEC standards:

• JESD8-12 (0.8 V to 1.3 V)

• JESD8-11 (0.9 V to 1.65 V)

• JESD8-7 (1.2 V to 1.95 V)

• JESD8-5 (1.8 V to 2.7 V)

• JESD8-B (2.7 V to 3.6 V)

• ESD protection:

• HBM: ANSI/ESDA/JEDEC JS-001 class 3A exceeds 5000 V

• CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

• Multiple package options

• Specified from -40 °C to +85 °C and -40 °C to +125 °C

• Low current (max. 100 mA)

• Low voltage (max. 65 V)

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: ≤ 250 mW

• Two tolerance series: ± 2 % and approximately ± 5 %

• Working voltage range: nominal 1.8 V to 51 V

• Specified at a low test current (50 μA), ideal for low bias and portable battery-powered applications

• BZX8450-B11-Q to -C51-Q: Intentional minor rise of leakage current for optimized fast switching and noise reduction [AN90031]

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: ≤ 300 mW

• Two tolerance series: ± 2 % and approximately ± 5 %

• Working voltage range: nominal 1.8 V to 51 V

• Specified at a low test current (50 μA), ideal for low bias and portable battery-powered applications

• BZX38450-B11-Q to -C51-Q: Intentional minor rise of leakage current for optimized fast switching and noise reduction [AN90031]

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• High current

• Three current gain selections

• High power dissipation capability

• Exposed heatsink for excellent thermal and electrical conductivity

• AEC-Q101 qualified

• Total power dissipation: Ptot≤ 590 mW

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Small plastic package suitable for surface-mounted design

• Low differential resistance

• Tight tolerance: ± 2 %

• Total power dissipation: Ptot≤ 590 mW

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Small plastic package suitable for surface-mounted design

• Low differential resistance

• Tight tolerance: ± 2 %

• Wide supply voltage range from 1.65 V to 5.5 V

• High noise immunity

• Complies with JEDEC standard:

• JESD8-7 (1.65 V to 1.95 V)

• JESD8-5 (2.3 V to 2.7 V)

• JESD8C (2.7 V to 3.6 V)

• JESD36 (4.5 V to 5.5 V)

• ±24 mA output drive (VCC= 3.0 V)

• CMOS low power dissipation

• Latch-up performance exceeds 250 mA

• Direct interface with TTL levels

• Overvoltage tolerant inputs to 5.5 V

• IOFFcircuitry provides partial Power-down mode operation

• ESD protection:

• HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

• CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

• Multiple package options

• Specified from -40 °C to +125 °C

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• High collector current capability ICand ICM

• Two current gain selections

• High power dissipation capability

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• High collector current capability ICand ICM

• Three current gain selections

• High power dissipation capability

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• JESD8-7 (1.65 V to 1.95 V)

• JESD8-5 (2.3 V to 2.7 V)

• JESD8C (2.7 V to 3.6 V)

• JESD36 (4.5 V to 5.5 V)

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Wide supply voltage range from 0.8 V to 3.6 V

• High noise immunity

• Complies with JEDEC standards:

• JESD8-12 (0.8 V to 1.3 V)

• JESD8-11 (0.9 V to 1.65 V)

• JESD8-7 (1.65 V to 1.95 V)

• JESD8-5 (2.3 V to 2.7 V)

• JESD8C (2.7 V to 3.6 V)

• Low static power consumption; ICC= 0.9 μA (maximum)

• Latch-up performance exceeds 100 mA per JESD 78 Class II

• Overvoltage tolerant inputs to 3.6 V

• Low noise overshoot and undershoot < 10 % of VCC

• IOFFcircuitry provides partial Power-down mode operation

• ESD protection:

• HBM: ANSI/ESDA/JEDEC JS-001 class 3A exceeds 5000 V

• CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

• Multiple package options

• Specified from -40 °C to +85 °C and -40 °C to +125 °C

• Total power dissipation: Ptot≤ 400 mW

• Small plastic package suitable for surface mounted design

• Wide variety of voltage ranges: nominal 2.4 V to 36 V (E24 range)

• Tolerance approximately ± 2 %

• PDZ5.1B - 10B: Very low dynamic impedances at low currents, very low leakage current, hard breakdown knee

• Total power dissipation: ≤ 300 mW

• Two tolerance series: ± 2 % and approximately ± 5 %

• Working voltage range: nominal 1.8 V to 51 V

• Specified at a low test current (50 μA), ideal for low bias and portable battery-powered applications

• BZX38450-B11-Q to -C51-Q: Intentional minor rise of leakage current for optimized fast switching and noise reduction [AN90031]

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• High collector current capability ICand ICM

• Three current gain selections

• High power dissipation capability

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: ≤ 300 mW

• Two tolerance series: ± 2 % and approximately ± 5 %

• Working voltage range: nominal 1.8 V to 51 V

• Specified at a low test current (50 μA), ideal for low bias and portable battery-powered applications

• BZX38450-B11-Q to -C51-Q: Intentional minor rise of leakage current for optimized fast switching and noise reduction [AN90031]

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• High collector current capability ICand ICM

• Three current gain selections

• High power dissipation capability

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: ≤ 300 mW

• Two tolerance series: ± 2 % and approximately ± 5 %

• Working voltage range: nominal 1.8 V to 51 V

• Specified at a low test current (50 μA), ideal for low bias and portable battery-powered applications

• BZX38450-B11 to -C51: Intentional minor rise of leakage current for optimized fast switching and noise reduction [AN90031]

• Total power dissipation: Ptot≤ 590 mW

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Small plastic package suitable for surface-mounted design

• Low differential resistance

• Tight tolerance: ± 2 %

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Very low dynamic impedance at low currents: approximately 5 % of conventional series

• Hard breakdown knee

• Low noise: approximately 10 % of conventional series

• Total power dissipation: max. 250 mW

• Small tolerances of VZ

• Working voltage range: nominal 5.00 to 6.80 V

• Non-repetitive peak reverse power dissipation: maximal 30 W at 150 °C

• JESD8-7 (1.65 V to 1.95 V)

• JESD8-5 (2.3 V to 2.7 V)

• JESD8C (2.7 V to 3.6 V)

• JESD36 (4.5 V to 5.5 V)

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: Ptot≤ 590 mW

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Small plastic package suitable for surface-mounted design

• Low differential resistance

• Tight tolerance: ± 2 %

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: ≤ 300 mW

• Two tolerance series: ± 2 % and approximately ± 5 %

• Working voltage range: nominal 1.8 V to 51 V

• Specified at a low test current (50 μA), ideal for low bias and portable battery-powered applications

• BZX38450-B11 to -C51: Intentional minor rise of leakage current for optimized fast switching and noise reduction [AN90031]

• Total power dissipation: ≤ 300 mW

• Two tolerance series: ± 2 % and approximately ± 5 %

• Working voltage range: nominal 1.8 V to 51 V

• Specified at a low test current (50 μA), ideal for low bias and portable battery-powered applications

• BZX38450-B11-Q to -C51-Q: Intentional minor rise of leakage current for optimized fast switching and noise reduction [AN90031]

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: ≤ 300 mW

• Two tolerance series: ± 2 % and approximately ± 5 %

• Working voltage range: nominal 1.8 V to 51 V

• Specified at a low test current (50 μA), ideal for low bias and portable battery-powered applications

• BZX38450-B11 to -C51: Intentional minor rise of leakage current for optimized fast switching and noise reduction [AN90031]

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: ≤ 250 mW

• Two tolerance series: ± 2 % and approximately ± 5 %

• Working voltage range: nominal 1.8 V to 51 V

• Specified at a low test current (50 μA), ideal for low bias and portable battery-powered applications

• BZX8450-B11-Q to -C51-Q: Intentional minor rise of leakage current for optimized fast switching and noise reduction [AN90031]

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• General-purpose transistors

• SMD plastic packages

• Three different gain selections

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: Ptot≤ 590 mW

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Small plastic package suitable for surface-mounted design

• Low differential resistance

• Tight tolerance: ± 2 %

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Forward current: IF≤ 0.5 A

• Reverse voltage: VR≤ 40 V

• Low forward voltage typ. VF= 420 mV

• Low reverse current typ. IR= 30 µA

• Small SMD plastic package

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Total power dissipation: ≤ 300 mW

• Two tolerance series: ± 2 % and approximately ± 5 %

• Working voltage range: nominal 1.8 V to 51 V

• Specified at a low test current (50 μA), ideal for low bias and portable battery-powered applications

• BZX38450-B11-Q to -C51-Q: Intentional minor rise of leakage current for optimized fast switching and noise reduction [AN90031]

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: ≤ 300 mW

• Two tolerance series: ± 2 % and approximately ± 5 %

• Working voltage range: nominal 1.8 V to 51 V

• Specified at a low test current (50 μA), ideal for low bias and portable battery-powered applications

• BZX38450-B11 to -C51: Intentional minor rise of leakage current for optimized fast switching and noise reduction [AN90031]

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Wide supply voltage range from 0.8 V to 3.6 V

• CMOS low power dissipation

• High noise immunity

• Overvoltage tolerant inputs to 3.6 V

• Low static power consumption; ICC= 0.9 μA (maximum)

• Latch-up performance exceeds 100 mA per JESD 78 Class II

• Low noise overshoot and undershoot < 10 % of VCC

• IOFFcircuitry provides partial Power-down mode operation

• Complies with JEDEC standards:

• ESD protection:

• HBM: ANSI/ESDA/JEDEC JS-001 class 3A exceeds 5000 V

• CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

• Multiple package options

• Specified from -40 °C to +85 °C and -40 °C to +125 °C

• High collector current capability ICand ICM

• Three current gain selections

• High power dissipation capability

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Total power dissipation: ≤300 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: ≤ 250 mW

• Two tolerance series: ± 2 % and approximately ± 5 %

• Working voltage range: nominal 1.8 V to 51 V

• Specified at a low test current (50 μA), ideal for low bias and portable battery-powered applications

• BZX8450-B11-Q to -C51-Q: Intentional minor rise of leakage current for optimized fast switching and noise reduction [AN90031]

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• JESD8-12 (0.8 V to 1.3 V)

• JESD8-11 (0.9 V to 1.65 V)

• JESD8-7 (1.65 V to 1.95 V)

• JESD8-5 (2.3 V to 2.7 V)

• JESD8C (2.7 V to 3.6 V)

• Total power dissipation: ≤ 300 mW

• Two tolerance series: ± 2 % and approximately ± 5 %

• Working voltage range: nominal 1.8 V to 51 V

• Specified at a low test current (50 μA), ideal for low bias and portable battery-powered applications

• BZX38450-B11-Q to -C51-Q: Intentional minor rise of leakage current for optimized fast switching and noise reduction [AN90031]

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• JESD8-12 (0.8 V to 1.3 V)

• JESD8-11 (0.9 V to 1.65 V)

• JESD8-7 (1.65 V to 1.95 V)

• JESD8-5 (2.3 V to 2.7 V)

• JESD8C (2.7 V to 3.6 V)

• Total power dissipation: ≤300 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: Ptot≤ 400 mW

• Small plastic package suitable for surface mounted design

• Wide variety of voltage ranges: nominal 2.4 V to 36 V (E24 range)

• Tolerance approximately ± 2 %

• PDZ5.1B-Q - 10B-Q: Very low dynamic impedances at low currents, very low leakage current, hard breakdown knee

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: Ptot≤ 400 mW

• Small plastic package suitable for surface mounted design

• Wide variety of voltage ranges: nominal 2.4 V to 36 V (E24 range)

• Tolerance approximately ± 2 %

• PDZ5.1B - 10B: Very low dynamic impedances at low currents, very low leakage current, hard breakdown knee

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: Ptot≤ 400 mW

• Small plastic package suitable for surface mounted design

• Wide variety of voltage ranges: nominal 2.4 V to 36 V (E24 range)

• Tolerance approximately ± 2 %

• PDZ5.1B-Q - 10B-Q: Very low dynamic impedances at low currents, very low leakage current, hard breakdown knee

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Low current (max. 100 mA)

• Low voltage (max. 65 V)

• Total power dissipation: Ptot≤ 250 mW

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Leadless ultra small plastic package suitable for surface-mounted design

• AEC-Q101 qualified

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• JESD8-12 (0.8 V to 1.3 V)

• JESD8-11 (0.9 V to 1.65 V)

• JESD8-7 (1.65 V to 1.95 V)

• JESD8-5 (2.3 V to 2.7 V)

• JESD8C (2.7 V to 3.6 V)

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• General-purpose transistors

• SMD plastic packages

• Three different gain selections

• Total power dissipation: ≤ 250 mW

• Two tolerance series: ± 2 % and approximately ± 5 %

• Working voltage range: nominal 1.8 V to 51 V

• Specified at a low test current (50 μA), ideal for low bias and portable battery-powered applications

• BZX8450-B11 to -C51: Intentional minor rise of leakage current for optimized fast switching and noise reduction [AN90031].

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Total power dissipation: ≤ 250 mW

• Two tolerance series: ± 2 % and approximately ± 5 %

• Working voltage range: nominal 1.8 V to 51 V

• Specified at a low test current (50 μA), ideal for low bias and portable battery-powered applications

• BZX8450-B11 to -C51: Intentional minor rise of leakage current for optimized fast switching and noise reduction [AN90031].

• Wide supply voltage range from 1.65 V to 5.5 V

• High noise immunity

• ±24 mA output drive (VCC= 3.0 V)

• CMOS low power dissipation

• Direct interface with TTL levels

• Overvoltage tolerant inputs to 5.5 V

• IOFFcircuitry provides partial Power-down mode operation

• Latch-up performance ≤ 250 mA

• Complies with JEDEC standard:

• JESD8-7 (1.65 V to 1.95 V)

• JESD8-5 (2.3 V to 2.7 V)

• JESD8C (2.7 V to 3.6 V)

• JESD36 (4.5 V to 5.5 V)

• ESD protection:

• HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

• CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

• Multiple package options

• Specified from −40 °C to +85 °C and −40 °C to +125 °C

• High collector current capability ICand ICM

• Three current gain selections

• High power dissipation capability

• Total power dissipation: Ptot≤ 590 mW

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Small plastic package suitable for surface-mounted design

• Low differential resistance

• Tight tolerance: ± 2 %

• JESD8-12 (0.8 V to 1.3 V)

• JESD8-11 (0.9 V to 1.65 V)

• JESD8-7 (1.2 V to 1.95 V)

• JESD8-5 (1.8 V to 2.7 V)

• JESD8-B (2.7 V to 3.6 V)

• JESD8-12 (0.8 V to 1.3 V)

• JESD8-11 (0.9 V to 1.65 V)

• JESD8-7 (1.2 V to 1.95 V)

• JESD8-5 (1.8 V to 2.7 V)

• JESD8-B (2.7 V to 3.6 V)

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: Ptot≤ 590 mW

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Small plastic package suitable for surface-mounted design

• Low differential resistance

• Tight tolerance: ± 2 %

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• JESD8-12 (0.8 V to 1.3 V)

• JESD8-11 (0.9 V to 1.65 V)

• JESD8-7 (1.2 V to 1.95 V)

• JESD8-5 (1.8 V to 2.7 V)

• JESD8-B (2.7 V to 3.6 V)

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• General-purpose transistors

• SMD plastic packages

• Three different gain selections

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Wide supply voltage range from 1.65 V to 5.5 V

• High noise immunity

• ±24 mA output drive (VCC= 3.0 V)

• CMOS low power consumption

• Latch-up performance exceeds 250 mA

• Direct interface with TTL levels

• Inputs accept voltages up to 5 V

• Complies with JEDEC standard:

• JESD8-7 (1.65 V to 1.95 V)

• JESD8-5 (2.3 V to 2.7 V)

• JESD8C (2.7 V to 3.6 V)

• JESD36 (4.5 V to 5.5 V)

• ESD protection:

• HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

• CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

• Multiple package options

• Specified from -40 °C to +85 °C and -40 °C to +125 °C

• JESD8-7 (1.65 V to 1.95 V)

• JESD8-5 (2.3 V to 2.7 V)

• JESD8C (2.7 V to 3.6 V)

• JESD36 (4.5 V to 5.5 V)

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Rated peak pulse power: PPPM= 400 W

• Reverse standoff voltage range: VRWM= 20 V

• Reverse current: IRM= 0.001 μA

• Small plastic package suitable for surface-mounted design

• Very low package height: 1 mm

• AEC-Q101 qualified

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Total power dissipation: Ptot≤ 590 mW

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Small plastic package suitable for surface-mounted design

• Low differential resistance

• Tight tolerance: ± 2 %

• For 74AHC1G125: CMOS level

• For 74AHCT1G125: TTL level

• Total power dissipation: ≤ 300 mW

• Two tolerance series: ± 2 % and approximately ± 5 %

• Working voltage range: nominal 1.8 V to 51 V

• Specified at a low test current (50 μA), ideal for low bias and portable battery-powered applications

• BZX38450-B11-Q to -C51-Q: Intentional minor rise of leakage current for optimized fast switching and noise reduction [AN90031]

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• 100 mA output current capability

• Built-in bias resistors

• Simplifies circuit design

• Reduces component count

• Reduces pick and place costs

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• For 74AHC1G04: CMOS level

• For 74AHCT1G04: TTL level

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: ≤ 300 mW

• Two tolerance series: ± 2 % and approximately ± 5 %

• Working voltage range: nominal 1.8 V to 51 V

• Specified at a low test current (50 μA), ideal for low bias and portable battery-powered applications

• BZX38450-B11 to -C51: Intentional minor rise of leakage current for optimized fast switching and noise reduction [AN90031]

• Total power dissipation: Ptot≤ 400 mW

• Small plastic package suitable for surface mounted design

• Wide variety of voltage ranges: nominal 2.4 V to 36 V (E24 range)

• Tolerance approximately ± 2 %

• PDZ5.1B - 10B: Very low dynamic impedances at low currents, very low leakage current, hard breakdown knee

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• JESD8-7 (1.65 V to 1.95 V)

• JESD8-5 (2.3 V to 2.7 V)

• JESD8C (2.7 V to 3.6 V)

• JESD36 (4.5 V to 5.5 V)

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• JESD8-7 (1.65 V to 1.95 V)

• JESD8-5 (2.3 V to 2.7 V)

• JESD8C (2.7 V to 3.6 V)

• JESD36 (4.5 V to 5.5 V)

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Total power dissipation: ≤ 250 mW

• Two tolerance series: ± 2 % and approximately ± 5 %

• Working voltage range: nominal 1.8 V to 51 V

• Specified at a low test current (50 μA), ideal for low bias and portable battery-powered applications

• BZX8450-B11-Q to -C51-Q: Intentional minor rise of leakage current for optimized fast switching and noise reduction [AN90031]

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• General-purpose transistors

• SMD plastic packages

• Three different gain selections

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Total power dissipation: ≤ 250 mW

• Two tolerance series: ± 2 % and approximately ± 5 %

• Working voltage range: nominal 1.8 V to 51 V

• Specified at a low test current (50 μA), ideal for low bias and portable battery-powered applications

• BZX8450-B11-Q to -C51-Q: Intentional minor rise of leakage current for optimized fast switching and noise reduction [AN90031]

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: Ptot≤ 400 mW

• Small plastic package suitable for surface mounted design

• Wide variety of voltage ranges: nominal 2.4 V to 36 V (E24 range)

• Tolerance approximately ± 2 %

• PDZ5.1B - 10B: Very low dynamic impedances at low currents, very low leakage current, hard breakdown knee

• HBM: ANSI/ESDA/JEDEC JS-001 class 3A exceeds 5000 V

• CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

• JESD8-12 (0.8 V to 1.3 V)

• JESD8-11 (0.9 V to 1.65 V)

• JESD8-7 (1.65 V to 1.95 V)

• JESD8-5 (2.3 V to 2.7 V)

• JESD8C (2.7 V to 3.6 V)

• High current

• Three current gain selections

• High power dissipation capability

• Exposed heatsink for excellent thermal and electrical conductivity

• AEC-Q101 qualified

• JESD8-12 (0.8 V to 1.3 V)

• JESD8-11 (0.9 V to 1.65 V)

• JESD8-7 (1.2 V to 1.95 V)

• JESD8-5 (1.8 V to 2.7 V)

• JESD8C (2.7 V to 3.6 V)

• Total power dissipation: Ptot≤ 590 mW

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Small plastic package suitable for surface-mounted design

• Low differential resistance

• Tight tolerance: ± 2 %

• High current

• Three current gain selections

• High power dissipation capability

• AEC-Q101 qualified

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• High current

• Three current gain selections

• High power dissipation capability

• AEC-Q101 qualified

• Total power dissipation: Ptot≤ 400 mW

• Small plastic package suitable for surface mounted design

• Wide variety of voltage ranges: nominal 2.4 V to 36 V (E24 range)

• Tolerance approximately ± 2 %

• PDZ5.1B - 10B: Very low dynamic impedances at low currents, very low leakage current, hard breakdown knee

• For 74AHC1G126: CMOS level

• For 74AHCT1G126: TTL level

• Total power dissipation: ≤300 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: ≤ 250 mW

• Two tolerance series: ± 2 % and approximately ± 5 %

• Working voltage range: nominal 1.8 V to 51 V

• Specified at a low test current (50 μA), ideal for low bias and portable battery-powered applications

• BZX8450-B11 to -C51: Intentional minor rise of leakage current for optimized fast switching and noise reduction [AN90031].

• HBM: ANSI/ESDA/JEDEC JS-001 class 3A exceeds 5000 V

• CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

• Total power dissipation: ≤ 590 mW

• Two tolerance series: ±2 % and approximately ±5 %

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Small plastic package suitable for surface-mounted design

• Low differential resistance

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: ≤ 250 mW

• Two tolerance series: ± 2 % and approximately ± 5 %

• Working voltage range: nominal 1.8 V to 51 V

• Specified at a low test current (50 μA), ideal for low bias and portable battery-powered applications

• BZX8450-B11 to -C51: Intentional minor rise of leakage current for optimized fast switching and noise reduction [AN90031].

• Total power dissipation: Ptot≤ 590 mW

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Small plastic package suitable for surface-mounted design

• Low differential resistance

• Tight tolerance: ± 2 %

• Total power dissipation: ≤ 300 mW

• Two tolerance series: ± 2 % and approximately ± 5 %

• Working voltage range: nominal 1.8 V to 51 V

• Specified at a low test current (50 μA), ideal for low bias and portable battery-powered applications

• BZX38450-B11 to -C51: Intentional minor rise of leakage current for optimized fast switching and noise reduction [AN90031]

• High current

• Three current gain selections

• High power dissipation capability

• Exposed heatsink for excellent thermal and electrical conductivity

• AEC-Q101 qualified

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: Ptot≤ 590 mW

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Small plastic package suitable for surface-mounted design

• Low differential resistance

• Tight tolerance: ± 2 %

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Low current (max. 100 mA)

• Low voltage (max. 65 V)

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: ≤ 300 mW

• Two tolerance series: ± 2 % and approximately ± 5 %

• Working voltage range: nominal 1.8 V to 51 V

• Specified at a low test current (50 μA), ideal for low bias and portable battery-powered applications

• BZX38450-B11-Q to -C51-Q: Intentional minor rise of leakage current for optimized fast switching and noise reduction [AN90031]

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: Ptot≤ 400 mW

• Small plastic package suitable for surface mounted design

• Wide variety of voltage ranges: nominal 2.4 V to 36 V (E24 range)

• Tolerance approximately ± 2 %

• PDZ5.1B - 10B: Very low dynamic impedances at low currents, very low leakage current, hard breakdown knee

• JESD8-12 (0.8 V to 1.3 V)

• JESD8-11 (0.9 V to 1.65 V)

• JESD8-7 (1.2 V to 1.95 V)

• JESD8-5 (1.8 V to 2.7 V)

• JESD8C (2.7 V to 3.6 V)

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• HBM: ANSI/ESDA/JEDEC JS-001 class 3A exceeds 5000 V

• CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

• JESD8-7 (1.65 V to 1.95 V)

• JESD8-5 (2.3 V to 2.7 V)

• JESD8C (2.7 V to 3.6 V)

• JESD36 (4.5 V to 5.5 V)

• General-purpose transistors

• SMD plastic packages

• Three different gain selections

• Total power dissipation: ≤ 250 mW

• Two tolerance series: ± 2 % and approximately ± 5 %

• Working voltage range: nominal 1.8 V to 51 V

• Specified at a low test current (50 μA), ideal for low bias and portable battery-powered applications

• BZX8450-B11-Q to -C51-Q: Intentional minor rise of leakage current for optimized fast switching and noise reduction [AN90031]

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• High current

• Three current gain selections

• High power dissipation capability

• Exposed heatsink for excellent thermal and electrical conductivity

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: ≤ 300 mW

• Two tolerance series: ± 2 % and approximately ± 5 %

• Working voltage range: nominal 1.8 V to 51 V

• Specified at a low test current (50 μA), ideal for low bias and portable battery-powered applications

• BZX38450-B11 to -C51: Intentional minor rise of leakage current for optimized fast switching and noise reduction [AN90031]

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Total power dissipation: Ptot≤ 590 mW

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Small plastic package suitable for surface-mounted design

• Low differential resistance

• Tight tolerance: ± 2 %

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Wide supply voltage range from 1.65 V to 5.5 V

• Very low ON resistance:

• 7.5 Ω (typical) at VCC= 2.7 V

• 6.5 Ω (typical) at VCC= 3.3 V

• 6 Ω (typical) at VCC= 5 V

• 32 mA continuous switch current

• Break-before-make switching

• High noise immunity

• CMOS low power dissipation

• TTL interface compatibility at 3.3 V

• Latch-up performance meets requirements of JESD 78 Class I

• Overvoltage tolerant control inputs to 5.5 V

• ESD protection:

• HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

• CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

• Multiple package options

• Specified from -40 °C to +85 °C and from -40 °C to +125 °C

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• JESD8-7 (1.65 V to 1.95 V)

• JESD8-5 (2.3 V to 2.7 V)

• JESD8C (2.7 V to 3.6 V)

• JESD36 (4.5 V to 5.5 V)

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: ≤300 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• JESD8-12 (0.8 V to 1.3 V)

• JESD8-11 (0.9 V to 1.65 V)

• JESD8-7 (1.65 V to 1.95 V)

• JESD8-5 (2.3 V to 2.7 V)

• JESD8C (2.7 V to 3.6 V)

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Low current (max. 100 mA)

• Low voltage (max. 65 V)

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• For 74AHC1G126: CMOS level

• For 74AHCT1G126: TTL level

• Total power dissipation: Ptot≤ 400 mW

• Small plastic package suitable for surface mounted design

• Wide variety of voltage ranges: nominal 2.4 V to 36 V (E24 range)

• Tolerance approximately ± 2 %

• PDZ5.1B - 10B: Very low dynamic impedances at low currents, very low leakage current, hard breakdown knee

• Total power dissipation: Ptot≤ 400 mW

• Small plastic package suitable for surface mounted design

• Wide variety of voltage ranges: nominal 2.4 V to 36 V (E24 range)

• Tolerance approximately ± 2 %

• PDZ5.1B-Q - 10B-Q: Very low dynamic impedances at low currents, very low leakage current, hard breakdown knee

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Low current (max. 100 mA)

• Low voltage (max. 65 V)

• JESD8-7 (1.65 V to 1.95 V)

• JESD8-5 (2.3 V to 2.7 V)

• JESD8C (2.7 V to 3.6 V)

• JESD36 (4.5 V to 5.5 V)

• Total power dissipation: Ptot≤ 400 mW

• Small plastic package suitable for surface mounted design

• Wide variety of voltage ranges: nominal 2.4 V to 36 V (E24 range)

• Tolerance approximately ± 2 %

• PDZ5.1B-Q - 10B-Q: Very low dynamic impedances at low currents, very low leakage current, hard breakdown knee

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• B: approximately ±5 %

• B1, B2, B3: approximately ±2 %

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: ≤ 250 mW

• Two tolerance series: ± 2 % and approximately ± 5 %

• Working voltage range: nominal 1.8 V to 51 V

• Specified at a low test current (50 μA), ideal for low bias and portable battery-powered applications

• BZX8450-B11-Q to -C51-Q: Intentional minor rise of leakage current for optimized fast switching and noise reduction [AN90031]

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• High collector current capability ICand ICM

• Three current gain selections

• High power dissipation capability

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: ≤300 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Total power dissipation: ≤ 250 mW

• Two tolerance series: ± 2 % and approximately ± 5 %

• Working voltage range: nominal 1.8 V to 51 V

• Specified at a low test current (50 μA), ideal for low bias and portable battery-powered applications

• BZX8450-B11 to -C51: Intentional minor rise of leakage current for optimized fast switching and noise reduction [AN90031].

• HBM: ANSI/ESDA/JEDEC JS-001 class 3A exceeds 5000 V

• CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

• Total power dissipation: ≤300 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• High collector current capability ICand ICM

• Three current gain selections

• High power dissipation capability

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: ≤ 300 mW

• Two tolerance series: ± 2 % and approximately ± 5 %

• Working voltage range: nominal 1.8 V to 51 V

• Specified at a low test current (50 μA), ideal for low bias and portable battery-powered applications

• BZX38450-B11 to -C51: Intentional minor rise of leakage current for optimized fast switching and noise reduction [AN90031]

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• High collector current capability ICand ICM

• Three current gain selections

• High power dissipation capability

• Total power dissipation: Ptot≤ 400 mW

• Small plastic package suitable for surface mounted design

• Wide variety of voltage ranges: nominal 2.4 V to 36 V (E24 range)

• Tolerance approximately ± 2 %

• PDZ5.1B-Q - 10B-Q: Very low dynamic impedances at low currents, very low leakage current, hard breakdown knee

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: ≤ 300 mW

• Two tolerance series: ± 2 % and approximately ± 5 %

• Working voltage range: nominal 1.8 V to 51 V

• Specified at a low test current (50 μA), ideal for low bias and portable battery-powered applications

• BZX38450-B11 to -C51: Intentional minor rise of leakage current for optimized fast switching and noise reduction [AN90031]

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Total power dissipation: Ptot≤ 590 mW

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Small plastic package suitable for surface-mounted design

• Low differential resistance

• Tight tolerance: ± 2 %

• Wide supply voltage range from 0.8 V to 3.6 V

• High noise immunity

• Complies with JEDEC standards:

• JESD8-12 (0.8 V to 1.3 V)

• JESD8-11 (0.9 V to 1.65 V)

• JESD8-7 (1.2 V to 1.95 V)

• JESD8-5 (1.8 V to 2.7 V)

• JESD8-B (2.7 V to 3.6 V)

• Low static power consumption; ICC= 0.9 μA (maximum)

• Latch-up performance exceeds 100 mA per JESD 78 Class II

• Inputs accept voltages up to 3.6 V

• Low noise overshoot and undershoot < 10 % of VCC

• Input-disable feature allows floating input conditions

• IOFFcircuitry provides partial Power-down mode operation

• Multiple package options

• ESD protection:

• HBM: ANSI/ESDA/JEDEC JS-001 class 3A exceeds 5000 V

• CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

• Specified from -40 °C to +85 °C and -40 °C to +125 °C

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Total power dissipation: Ptot≤ 400 mW

• Small plastic package suitable for surface mounted design

• Wide variety of voltage ranges: nominal 2.4 V to 36 V (E24 range)

• Tolerance approximately ± 2 %

• PDZ5.1B-Q - 10B-Q: Very low dynamic impedances at low currents, very low leakage current, hard breakdown knee

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• High current

• Three current gain selections

• High power dissipation capability

• Exposed heatsink for excellent thermal and electrical conductivity

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• HBM: ANSI/ESDA/JEDEC JS-001 class 3A exceeds 5000 V

• CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• General-purpose transistors

• SMD plastic packages

• Three different gain selections

• High current

• Three current gain selections

• High power dissipation capability

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Total power dissipation: Ptot≤ 400 mW

• Small plastic package suitable for surface mounted design

• Wide variety of voltage ranges: nominal 2.4 V to 36 V (E24 range)

• Tolerance approximately ± 2 %

• PDZ5.1B-Q - 10B-Q: Very low dynamic impedances at low currents, very low leakage current, hard breakdown knee

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• JESD8-7 (1.65 V to 1.95 V)

• JESD8-5 (2.3 V to 2.7 V)

• JESD8C (2.7 V to 3.6 V)

• JESD36 (4.5 V to 5.5 V)

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• 100 mA output current capability

• Built-in bias resistors

• Simplifies circuit design

• Reduces component count

• Reduces pick and place costs

• Total power dissipation: Ptot≤ 400 mW

• Small plastic package suitable for surface mounted design

• Wide variety of voltage ranges: nominal 2.4 V to 36 V (E24 range)

• Tolerance approximately ± 2 %

• PDZ5.1B - 10B: Very low dynamic impedances at low currents, very low leakage current, hard breakdown knee

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Low current (max. 100 mA)

• Low voltage (max. 65 V)

• Total power dissipation: Ptot≤ 590 mW

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Small plastic package suitable for surface-mounted design

• Low differential resistance

• Tight tolerance: ± 2 %

• Total power dissipation: ≤ 300 mW

• Two tolerance series: ± 2 % and approximately ± 5 %

• Working voltage range: nominal 1.8 V to 51 V

• Specified at a low test current (50 μA), ideal for low bias and portable battery-powered applications

• BZX38450-B11 to -C51: Intentional minor rise of leakage current for optimized fast switching and noise reduction [AN90031]

• Total power dissipation: ≤ 300 mW

• Two tolerance series: ± 2 % and approximately ± 5 %

• Working voltage range: nominal 1.8 V to 51 V

• Specified at a low test current (50 μA), ideal for low bias and portable battery-powered applications

• BZX38450-B11-Q to -C51-Q: Intentional minor rise of leakage current for optimized fast switching and noise reduction [AN90031]

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• JESD8-12 (0.8 V to 1.3 V)

• JESD8-11 (0.9 V to 1.65 V)

• JESD8-7 (1.65 V to 1.95 V)

• JESD8-5 (2.3 V to 2.7 V)

• JESD8C (2.7 V to 3.6 V)

• Total power dissipation: Ptot≤ 590 mW

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Small plastic package suitable for surface-mounted design

• Low differential resistance

• Tight tolerance: ± 2 %

• High current

• Three current gain selections

• High power dissipation capability

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• High current

• Three current gain selections

• High power dissipation capability

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• General-purpose transistors

• SMD plastic packages

• Three different gain selections

• JESD8-7 (1.65 V to 1.95 V)

• JESD8-5 (2.3 V to 2.7 V)

• JESD-8B/JESD36 (2.7 V to 3.6 V)

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Total power dissipation: ≤ 250 mW

• Two tolerance series: ± 2 % and approximately ± 5 %

• Working voltage range: nominal 1.8 V to 51 V

• Specified at a low test current (50 μA), ideal for low bias and portable battery-powered applications

• BZX8450-B11 to -C51: Intentional minor rise of leakage current for optimized fast switching and noise reduction [AN90031].

• Total power dissipation: Ptot≤ 590 mW

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Small plastic package suitable for surface-mounted design

• Low differential resistance

• Tight tolerance: ± 2 %

• Total power dissipation: ≤300 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Total power dissipation: Ptot≤ 400 mW

• Small plastic package suitable for surface mounted design

• Wide variety of voltage ranges: nominal 2.4 V to 36 V (E24 range)

• Tolerance approximately ± 2 %

• PDZ5.1B - 10B: Very low dynamic impedances at low currents, very low leakage current, hard breakdown knee

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: ≤300 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Total power dissipation: Ptot≤ 400 mW

• Small plastic package suitable for surface mounted design

• Wide variety of voltage ranges: nominal 2.4 V to 36 V (E24 range)

• Tolerance approximately ± 2 %

• PDZ5.1B - 10B: Very low dynamic impedances at low currents, very low leakage current, hard breakdown knee

• Total power dissipation: Ptot≤ 400 mW

• Small plastic package suitable for surface mounted design

• Wide variety of voltage ranges: nominal 2.4 V to 36 V (E24 range)

• Tolerance approximately ± 2 %

• PDZ5.1B - 10B: Very low dynamic impedances at low currents, very low leakage current, hard breakdown knee

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Low current (max. 100 mA)

• Low voltage (max. 65 V)

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: ≤300 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: Ptot≤ 400 mW

• Small plastic package suitable for surface mounted design

• Wide variety of voltage ranges: nominal 2.4 V to 36 V (E24 range)

• Tolerance approximately ± 2 %

• PDZ5.1B - 10B: Very low dynamic impedances at low currents, very low leakage current, hard breakdown knee

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• High collector current capability ICand ICM

• Three current gain selections

• High power dissipation capability

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: Ptot≤ 590 mW

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Small plastic package suitable for surface-mounted design

• Low differential resistance

• Tight tolerance: ± 2 %

• Wide supply voltage range from 0.8 V to 3.6 V

• CMOS low power dissipation

• High noise immunity

• Overvoltage tolerant inputs to 3.6 V

• Low static power consumption; ICC= 0.9 μA (maximum)

• Latch-up performance exceeds 100 mA per JESD 78 Class II

• Low noise overshoot and undershoot < 10 % of VCC

• IOFFcircuitry provides partial Power-down mode operation

• Complies with JEDEC standards:

• ESD protection:

• HBM: ANSI/ESDA/JEDEC JS-001 class 3A exceeds 5000 V

• CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

• Multiple package options

• Specified from -40 °C to +85 °C and -40 °C to +125 °C

• Total power dissipation: ≤ 300 mW

• Two tolerance series: ± 2 % and approximately ± 5 %

• Working voltage range: nominal 1.8 V to 51 V

• Specified at a low test current (50 μA), ideal for low bias and portable battery-powered applications

• BZX38450-B11-Q to -C51-Q: Intentional minor rise of leakage current for optimized fast switching and noise reduction [AN90031]

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Total power dissipation: ≤300 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Low current (max. 100 mA)

• Low voltage (max. 65 V)

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• JESD8-12 (0.8 V to 1.3 V)

• JESD8-11 (0.9 V to 1.65 V)

• JESD8-7 (1.2 V to 1.95 V)

• JESD8-5 (1.8 V to 2.7 V)

• JESD8-B (2.7 V to 3.6 V)

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• General-purpose transistors

• SMD plastic packages

• Three different gain selections

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• High collector current capability ICand ICM

• Three current gain selections

• High power dissipation capability

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: ≤ 300 mW

• Two tolerance series: ± 2 % and approximately ± 5 %

• Working voltage range: nominal 1.8 V to 51 V

• Specified at a low test current (50 μA), ideal for low bias and portable battery-powered applications

• BZX38450-B11 to -C51: Intentional minor rise of leakage current for optimized fast switching and noise reduction [AN90031]

• Wide supply voltage range from 0.8 V to 3.6 V

• CMOS low power dissipation

• High noise immunity

• Complies with JEDEC standards:

• JESD8-12 (0.8 V to 1.3 V)

• JESD8-11 (0.9 V to 1.65 V)

• JESD8-7 (1.65 V to 1.95 V)

• JESD8-5 (2.3 V to 2.7 V)

• JESD8C (2.7 V to 3.6 V)

• Low static power consumption; ICC= 0.9 μA (maximum)

• Latch-up performance exceeds 100 mA per JESD 78 Class II

• Overvoltage tolerant inputs to 3.6 V

• Low noise overshoot and undershoot < 10 % of VCC

• IOFFcircuitry provides partial Power-down mode operation

• Multiple package options

• ESD protection:

• HBM: ANSI/ESDA/JEDEC JS-001 class 3A exceeds 5000 V

• CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

• Specified from -40 °C to +85 °C and -40 °C to +125 °C

• Wide supply voltage range from 0.8 V to 3.6 V

• High noise immunity

• CMOS low power dissipation

• Low static power consumption; ICC= 0.9 μA (maximum)

• Latch-up performance exceeds 100 mA per JESD 78 Class II

• Overvoltage tolerant inputs to 3.6 V

• Low noise overshoot and undershoot < 10 % of VCC

• IOFFcircuitry provides partial Power-down mode operation

• Complies with JEDEC standards:

• JESD8-12 (0.8 V to 1.3 V)

• JESD8-11 (0.9 V to 1.65 V)

• JESD8-7 (1.65 V to 1.95 V)

• JESD8-5 (2.3 V to 2.7 V)

• JESD8C (2.7 V to 3.6 V)

• ESD protection:

• HBM: ANSI/ESDA/JEDEC JS-001 class 3A exceeds 5000 V

• CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

• Multiple package options

• Specified from −40 °C to +85 °C and −40 °C to +125 °C

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• General-purpose transistors

• SMD plastic packages

• Three different gain selections

• Total power dissipation: ≤ 300 mW

• Two tolerance series: ± 2 % and approximately ± 5 %

• Working voltage range: nominal 1.8 V to 51 V

• Specified at a low test current (50 μA), ideal for low bias and portable battery-powered applications

• BZX38450-B11-Q to -C51-Q: Intentional minor rise of leakage current for optimized fast switching and noise reduction [AN90031]

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• High collector current capability ICand ICM

• Three current gain selections

• High power dissipation capability

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Total power dissipation: ≤ 300 mW

• Two tolerance series: ± 2 % and approximately ± 5 %

• Working voltage range: nominal 1.8 V to 51 V

• Specified at a low test current (50 μA), ideal for low bias and portable battery-powered applications

• BZX38450-B11 to -C51: Intentional minor rise of leakage current for optimized fast switching and noise reduction [AN90031]

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Total power dissipation: Ptot≤ 590 mW

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Small plastic package suitable for surface-mounted design

• Low differential resistance

• Tight tolerance: ± 2 %

• JESD8-12 (0.8 V to 1.3 V)

• JESD8-11 (0.9 V to 1.65 V)

• JESD8-7 (1.65 V to 1.95 V)

• JESD8-5 (2.3 V to 2.7 V)

• JESD8C (2.7 V to 3.6 V)

• Total power dissipation: Ptot≤ 400 mW

• Small plastic package suitable for surface mounted design

• Wide variety of voltage ranges: nominal 2.4 V to 36 V (E24 range)

• Tolerance approximately ± 2 %

• PDZ5.1B-Q - 10B-Q: Very low dynamic impedances at low currents, very low leakage current, hard breakdown knee

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• JESD8-7 (1.65 V to 1.95 V)

• JESD8-5 (2.3 V to 2.7 V)

• JESD8C (2.7 V to 3.6 V)

• JESD36 (4.5 V to 5.5 V)

• Total power dissipation: ≤ 300 mW

• Two tolerance series: ± 2 % and approximately ± 5 %

• Working voltage range: nominal 1.8 V to 51 V

• Specified at a low test current (50 μA), ideal for low bias and portable battery-powered applications

• BZX38450-B11 to -C51: Intentional minor rise of leakage current for optimized fast switching and noise reduction [AN90031]

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: ≤300 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• High collector current capability ICand ICM

• Three current gain selections

• High power dissipation capability

• Total power dissipation: ≤ 250 mW

• Two tolerance series: ± 2 % and approximately ± 5 %

• Working voltage range: nominal 1.8 V to 51 V

• Specified at a low test current (50 μA), ideal for low bias and portable battery-powered applications

• BZX8450-B11-Q to -C51-Q: Intentional minor rise of leakage current for optimized fast switching and noise reduction [AN90031]

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• High collector current capability ICand ICM

• Three current gain selections

• High power dissipation capability

• JESD8-12 (0.8 V to 1.3 V)

• JESD8-11 (0.9 V to 1.65 V)

• JESD8-7 (1.2 V to 1.95 V)

• JESD8-5 (1.8 V to 2.7 V)

• JESD8-B (2.7 V to 3.6 V)

• High collector current capability ICand ICM

• Three current gain selections

• High power dissipation capability

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Total power dissipation: ≤250 mW

• Three tolerance series: ±1 %, ±2 % and approximately ±5 %

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

• High current

• Three current gain selections

• High power dissipation capability

• AEC-Q101 qualified

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

• Two tolerance series: ± 2 % and ± 5 %

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Low current (max. 100 mA)

• Low voltage (max. 65 V)

• Qualified according to AEC-Q101 and recommended for use in automotive applications

• Total power dissipation: Ptot≤ 400 mW

• Small plastic package suitable for surface mounted design

• Wide variety of voltage ranges: nominal 2.4 V to 36 V (E24 range)

• Tolerance approximately ± 2 %

• PDZ5.1B-Q - 10B-Q: Very low dynamic impedances at low currents, very low leakage current, hard breakdown knee

• Qualified according to AEC-Q101 and recommended for use in automotive applications

Description

Low-current voltage regulator diodes in a small SOT23 Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages. The diodes are available in the normalized E24 +- 2 pct. (BZX79-B) and approx. +- 5 pct. (BZX79-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V. Low-power general purpose voltage regulator diodes in a very small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. General-purpose Schottky diode in a SOD323 (SC-76) very small Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD) plastic package. NPN/NPN general-purpose double transistors in a small SOT363 (SC-88) Surface Mounted Device (SMD) plastic package. PNP medium power transistors in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN/NPN general-purpose double transistor in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Low-current voltage regulator diodes in a small SOT23 Surface-Mounted Device (SMD) plastic package. Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP general-purpose transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN medium power transistor series in a small SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD) plasic package. The 74LVC1T45; 74LVCH1T45 are single bit, dual supply transceivers with 3-state outputs that enable bidirectional level translation. They feature two 1-bit input-output ports (A and B), a direction control input (DIR) and dual supply pins (VCC(A)and VCC(B)). Both VCC(A)and VCC(B)can be supplied at any voltage between 1.2 V and 5.5 V making the device suitable for translating between any of the low voltage nodes (1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V and 5.0 V). Pins A and DIR are referenced to VCC(A)and pin B is referenced to VCC(B). A HIGH on DIR allows transmission from A to B and a LOW on DIR allows transmission from B to A. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. High-speed switching double diode, encapsulated in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. NPN Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. The HEF4051B-Q100 is a single-pole octal-throw analog switch (SP8T) suitable for use in analog or digital 8:1 multiplexer/demultiplexer applications. The switch features three digital select inputs (S1, S2 and S3), eight independent inputs/outputs (Yn), a common input/output (Z) and a digital enable input (E). WhenEis HIGH, the switches are turned off. Inputs include clamp diodes. This enables the use of current limiting resistors to interface inputs to voltages in excess of VCC. Three-terminal shunt regulator family with an output voltage range between Vref= 1.24 V and 14 V, to be set by two external resistors. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages. The diodes are available in the normalized E24 +- 2 pct. (BZX79-B) and approx. +- 5 pct. (BZX79-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V. The 74AUP1T97 is a configurable multiple function gate with level translating, Schmitt-trigger inputs. The device can be configured as any of the following logic functions MUX, AND, OR, NAND, NOR, inverter and buffer; using the 3-bit input. All inputs can be connected directly to VCCor GND. Low threshold Schmitt trigger inputs allow these devices to be driven by 1.8 V logic levels in 3.3 V applications. This device ensures very low static and dynamic power consumption across the entire VCCrange from 2.3 V to 3.6 V. This device is fully specified for partial power down applications using IOFF. The IOFFcircuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down. PNP Resistor-Equipped Transistor (RET) family in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in an SOD523 (SC-79) ultra small flat lead Surface-Mounted Device (SMD) plastic package. The 74LVC1G11 is a single 3-input AND gate. Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of these devices as translators in mixed 3.3 V and 5 V environments. NPN/PNP Resistor-Equipped Transistor (RET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages. The diodes are available in the normalized E24 +- 2 pct. (BZX79-B) and approx. +- 5 pct. (BZX79-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V. PNP medium power transistors in a SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in small hermetically sealed glass SOD80C Surface-Mounted Device (SMD) packages. The diodes are available in the normalized E24 ±2 % (BZV55-B) and approximately ±5 % (BZV55-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 V to 75 V. The 74AUP1G32 is a single 2-input OR gate. Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise and fall times. This device ensures very low static and dynamic power consumption across the entire VCCrange from 0.8 V to 3.6 V. This device is fully specified for partial power down applications using IOFF. The IOFFcircuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down. Low-current voltage regulator diodes in a small SOT23 Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages. The diodes are available in the normalized E24 +- 2 pct. (BZX79-B) and approx. +- 5 pct. (BZX79-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V. General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in small hermetically sealed glass SOD80C Surface-Mounted Device (SMD) packages. The diodes are available in the normalized E24 ±2 % (BZV55-B) and approximately ±5 % (BZV55-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 V to 75 V. Low-power voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. NPN low VCEsattransistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. The PMBD7000 consists of two high-speed switching diodes connected in series, fabricated in planar technology, and encapsulated in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Dual high-voltage switching diodes, encapsulated in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. The 74AVC4T774-Q100 is a 4-bit, dual supply transceiver that enables bidirectional level translation. It features eight 1-bit input-output ports (An and Bn), four direction control inputs (DIR1, DIR2, DIR3 and DIR4), an output enable input (OE) and dual supply pins (VCC(A)and VCC(B)). Both VCC(A)and VCC(B)can be supplied at any voltage between 0.8 V and 3.6 V making the device suitable for translating between any of the low voltage nodes (0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V and 3.3 V). Pins An,OEand DIRn are referenced to VCC(A)and pins Bn are referenced to VCC(B). A HIGH on DIRn allows transmission from An to Bn and a LOW on DIRn allows transmission from Bn to An. The output enable input (OE) can be used to disable the outputs so the buses are effectively isolated. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. 500 mA, 50 V NPN/PNP double Resistor-Equipped Transistor (RET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. PNP general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOD323F (SC-90) very small and flat lead Surface Mounted Device (SMD) plastic package. Ultra low capacitance double rail-to-rail ElectroStatic Discharge (ESD) protection diode in a small SOT457 Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages. The diodes are available in the normalized E24 +- 2 pct. (BZX79-B) and approx. +- 5 pct. (BZX79-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V. PNP medium power transistor in a SOT89 Surface-Mounted Device (SMD) plastic package. PNP general-purpose transistors in a very small SOT323 (SC-70), Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages. The diodes are available in the normalized E24 +- 2 pct. (BZX79-B) and approx. +- 5 pct. (BZX79-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V. Planar Schottky barrier dual diode with an integrated guard ring for stress protection. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes encapsulated in an ultra small SOD523 plastic SMD package. PNP general-purpose transistors in a small SOT23 (TO-236AB), Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages. The diodes are available in the normalized E24 +- 2 pct. (BZX79-B) and approx. +- 5 pct. (BZX79-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V. General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD) plasic package. General-purpose Zener diodes in an SOD523 (SC-79) ultra small flat lead Surface-Mounted Device (SMD) plastic package. Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. The74AVCH1T45is a single bit, dual supply transceiver that enables bidirectional level translation. The 74AVCH1T45 has active bus hold circuitry which is provided to hold unused or floating data inputs at a valid logic level. This feature eliminates the need for external pull-up or pull-down resistors.The device is fully specified for partial power-down applications using IOFF. The IOFFcircuitry disables the output, preventing potentially damaging backflow current through the device when it is powered down. The 74AUP1Z04 is a crystal driver with enable and internal resistor. When not in use theENinput can be driven HIGH, putting the device in a low power disable mode with X1 pulled HIGH via RPU, X2 set LOW and Y set HIGH. Schmitt trigger action on theENinput makes the circuit tolerant to slower input rise and fall times across the entire VCCrange from 0.8 V to 3.6 V. The 74LVC1G57 is a configurable multiple function gate with Schmitt-trigger inputs. The device can be configured as any of the following logic functions AND, OR, NAND, NOR, XNOR, inverter and buffer; using the 3-bit input. All inputs can be connected directly to VCCor GND. Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of these devices as translators in mixed 3.3 V and 5 V environments. The 74LVC1G332 is a single 3-input OR gate. Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of these devices as translators in mixed 3.3 V and 5 V environments. Planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a SOD323 (SC-76) very small SMD plastic package. PNP medium power transistor in a SOT89 (SC-62) medium power and flat lead plastic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. NPN general-purpose transistor in a very small SOT323 (SC70) Surface-Mounted Device (SMD) plastic package. The 74LVC1G38 is a single 2-input NAND gate with open-drain output. Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of these devices as translators in mixed 3.3 V and 5 V environments. NPN/PNP Resistor-Equipped double Transistor (RET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. PNP transistor in a SOT23 plastic package. NPN general-purpose transistors in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection encapsulated in small SOD123 Surface-Mounted Device (SMD) plastic package. Low-power general purpose voltage regulator diodes in a very small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. Planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a very small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. High-voltage switching diode in an ultra small SOD523 (SC-72) flat lead Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a very small and flat lead SOD323F (SC-90) Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. NPN general-purpose transistors in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. The 74LVC1G175 is a low-power, low-voltage single positive edge triggered D-type flip-flop with individual data (D) input, clock (CP) input, master reset (MR) input, and Q output. NPN low VCEsattransistor in a SOT457 (SC-74) plastic package. Low-current voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP/PNP double transistor in a SOT666 ultra small and flat lead Surface-Mounted Device (SMD) plastic package. NPN 500 mA Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN/NPN matched double transistor in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. PNP general-purpose transistors in a very small SOT323 (SC-70), Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages. The diodes are available in the normalized E24 +- 2 pct. (BZX79-B) and approx. +- 5 pct. (BZX79-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V. NPN power transistors in a power SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. NPN general-purpose transistors in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. NPN switching transistor in a SOT223 plastic package. Common-mode ElectroMagnetic Interference (EMI) filters with integrated ElectroStatic Discharge (ESD) protection for one, two and three differential channels. The devices are designed to provide low insertion loss for differential high-speed signals on each channel while unwanted common-mode signals are attenuated. 120 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications. Unidirectional ElectroStatic Discharge (ESD) protection diode in a SOD523 plastic package designed to protect one transmission or data line from the damage caused by ESD and other transients. PNP transistor in a plastic SOT23 package. The 1N4531, 1N4532 are high-speed switching diodes fabricated in planar technology, and encapsulated in hermetically sealed leaded glass SOD68 (DO-34) packages. 400 W unidirectional Transient Voltage Suppressor (TVS) in a SOD123W small and flat lead low-profile Surface-Mounted Device (SMD) plastic package, designed for transient overvoltage protection. NPN/PNP general-purpose double transistors in an SOT457 (SC-74) plastic package. Three-terminal shunt regulator family with an output voltage range between Vref= 1.24 V and 14 V, to be set by two external resistors. Low-power general purpose voltage regulator diodes in a very small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. NPN/PNP double Resistor-Equipped Transistor (RET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. The devices are ElectroStatic Discharge (ESD) protection devices for one, two or three differential channels. NPN medium power transistors in a SOT223 (SC-73) flat lead Surface-Mounted Device (SMD) plastic package. Low-power general purpose voltage regulator diodes in a very small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages. The diodes are available in the normalized E24 +- 2 pct. (BZX79-B) and approx. +- 5 pct. (BZX79-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V. NPN general-purpose transistor in a medium power SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. PNP complement: BSR31-Q. PNP general-purpose transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Low-current voltage regulator diodes in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN low VCEsattransistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. Low-power general purpose voltage regulator diodes in a very small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. PNP medium power transistors in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. PNP general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP general-purpose double transistor in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN complement: BC847BS. PNP general-purpose transistors in a very small SOT323 (SC-70), Surface-Mounted Device (SMD) plastic package. The 74LVC1G00 is a single 2-input NAND gate. Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of these devices as translators in mixed 3.3 V and 5 V environments. Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise and fall times. This device is fully specified for partial power down applications using IOFF. The IOFFcircuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down. General-purpose dual Schottky diode in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Low voltage regulator diodes in hermetically sealed SOD66 (DO-41) packages. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. High-speed switching diode, encapsulated in a very small and flat lead SOD323F Surface-Mounted Device (SMD) plastic package. N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. PNP/PNP Resistor-Equipped double Transistor (RET) family in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. PNP general-purpose transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. General-purpose dual Schottky diode in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Low-current voltage regulator diodes in a small SOT23 Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes encapsulated in an ultra small SOD523 plastic SMD package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. Low-power general purpose voltage regulator diodes in a very small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. NPN/NPN double Resistor-Equipped Transistor (RET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. High-speed switching double diode, encapsulated in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in small hermetically sealed glass SOD80C Surface-Mounted Device (SMD) packages. The diodes are available in the normalized E24 ±2 % (BZV55-B) and approximately ±5 % (BZV55-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 V to 75 V. Low voltage regulator diodes in hermetically sealed SOD66 (DO-41) packages. Low-power voltage regulator diodes encapsulated in an ultra small SOD523 plastic SMD package. Epitaxial, medium-speed switching, double diode in a small SOT23 Surface-Mounted Device (SMD) plastic package. The diodes are connected in series. Planar Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a very small and flat lead SOD323F Surface Mounted Device (SMD) plastic package. The 74AUP1G157 is a single 2-input multiplexer. Schmitt trigger action at all inputs makes the circuit tolerant to slower input rise and fall times. This device ensures a very low static and dynamic power consumption across the entire VCCrange from 0.8 V to 3.6 V. This device is fully specified for partial power-down applications using IOFF. The IOFFcircuitry disables the output, preventing the damaging backflow current through the device when it is powered down. This bidirectional ESD protection device is designed to protect high-speed interfaces such as SuperSpeed USB 3.2 at 10 Gbps, HDMI, DisplayPort, external Serial Advanced Technology Attachment (eSATA), Low Voltage Differential Signaling (LVDS), and Gigabit Multimedia Serial Link (GMSL) Serializer/Deserializer (SerDes) against ElectroStatic Discharge (ESD). PNP/PNP double Resistor-Equipped Transistor (RET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN Resistor-Equipped Transistor (RET) family in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Low capacitance unidirectional fivefold ElectroStatic Discharge (ESD) protection diode array in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package, designed to protect up to five unidirectional signal lines from the damage caused by ESD and other transients. NPN general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. The 74AUP1G18 is a 1-to-2 demultiplexer with a 3-state outputs. The device buffers the data on input A and passes it to output 1Y or 2Y, depending on whether the state of the select input (S) is LOW or HIGH. The unused output assumes the high impedence OFF-state. Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise and fall times. This device ensures very low static and dynamic power consumption across the entire VCCrange from 0.8 V to 3.6 V. This device is fully specified for partial power down applications using IOFF. The IOFFcircuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down. General-purpose Zener diodes in an SOD123 small and flat lead Surface-Mounted Device (SMD) plastic package. PNP general-purpose double transistor in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN complement: BC847BS-Q. NPN transistor in a SOT323 plastic package. NPN general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. Low voltage regulator diodes in hermetically sealed SOD66 (DO-41) packages. This bidirectional ESD protection device is designed to protect high-speed interfaces such as SuperSpeed USB 3.2 at 10 Gbps, HDMI, DisplayPort, external Serial Advanced Technology Attachment (eSATA), Low Voltage Differential Signaling (LVDS), and Gigabit Multimedia Serial Link (GMSL) Serializer/Deserializer (SerDes) against ElectroStatic Discharge (ESD). PNP/PNP Resistor-Equipped double Transistor (RET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. NPN general-purpose transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Low-power general purpose voltage regulator diodes in a very small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD) plastic package. Low-current voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. NPN medium power transistors in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package PNP general-purpose transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia’s unique "SchottkyPlus" technology delivers high efficiency, low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies. NPN medium frequency transistor in a SOT23 plastic package. Planar medium power Schottky barrier single diode with an integrated guard ring for stress protection, encapsulated in a very small SOD323 (SC-76) Surface-Mounted Device SMD plastic package. PNP medium power transistor in a SOT89 Surface-Mounted Device (SMD) plastic package. Low-current voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. NPN general-purpose transistors in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN high-voltage transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. Planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes encapsulated in an ultra small SOD523 plastic SMD package. PNP/PNP matched double transistors in SOT363 (SC-88) small Surface-Mounted Device (SMD) plastic package. The transistors are fully isolated internally. Medium-power voltage regulator diodes in SOT223 plastic SMD packages. NPN transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN low VCEsattransistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. Low-power general purpose voltage regulator diodes in a very small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. Dual high-voltage switching diodes, encapsulated in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD) plastic package. Low-power general purpose voltage regulator diodes in a very small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in small hermetically sealed glass SOD80C Surface-Mounted Device (SMD) packages. The diodes are available in the normalized E24 ±2 % (BZV55-B) and approximately ±5 % (BZV55-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 V to 75 V. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. NPN general-purpose transistor in a very small SOT323 (SC70) Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. Low-current voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. P-channel enhancement mode Field-Effect Transistor (FET) in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. NPN general-purpose transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. General-purpose dual Schottky diode in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD) plasic package. Low-power voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages. The diodes are available in the normalized E24 +- 2 pct. (BZX79-B) and approx. +- 5 pct. (BZX79-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V. The 74LVC2G14 is a dual inverter with Schmitt-trigger inputs. Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of these devices as translators in mixed 3.3 V and 5 V environments. The 74AUP1G02 is a single 2-input NOR gate. Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise and fall times. This device ensures very low static and dynamic power consumption across the entire VCCrange from 0.8 V to 3.6 V. This device is fully specified for partial power down applications using IOFF. The IOFFcircuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down. PNP general-purpose transistors in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. NPN/NPN double Resistor-Equipped Transistor (RET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package. General-purpose dual Schottky diode in a small SOT323 Surface-Mounted Device (SMD) plastic package. Low-power general purpose voltage regulator diodes in a very small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD) plastic package. The HEF4069UB-Q100 is a hex unbuffered inverter. Inputs include clamp diodes. This enables the use of current limiting resistors to interface inputs to voltages in excess of VDD. PNP medium power transistors in a SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. PNP general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD) plastic package. N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. NPN 500 mA Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. Unidirectional double ElectroStatic Discharge (ESD) protection diode in a common cathode configuration, encapsulated in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. The device is designed for ESD and transient overvoltage protection of up to two signal lines. NPN low VCEsatBreakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. Planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. The 74LVC1G86 provides the 2-input EXCLUSIVE-OR function. Low-current voltage regulator diodes in a small SOT23 Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD) plastic package. PNP switching transistor in a SOT323 (SC-70) very small Surface-Mounted Device (SMD) plastic package. Planar Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a very small and flat lead SOD323F Surface Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD) plastic package. Low-power general purpose voltage regulator diodes in a very small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. The devices are ElectroStatic Discharge (ESD) protection devices for one, two or three differential channels. The 74AUP2G06 provides two inverting buffers with open-drain output. The output of the device is an open drain and can be connected to other open-drain outputs to implement active-LOW wired-OR or active-HIGH wired-AND functions. Low-power voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages. The diodes are available in the normalized E24 +- 2 pct. (BZX79-B) and approx. +- 5 pct. (BZX79-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V. PNP Resistor-Equipped Transistor (RET) family in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. The 74AUP1T34 is a single dual supply translating buffer. Input A is referenced to VCC(A)and output Y is referenced to VCC(Y). Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise and fall times. This device ensures very low static and dynamic power consumption across the entire VCCrange from 1.1 V to 3.6 V. This device is fully specified for partial power down applications using IOFF. The IOFFcircuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. Low voltage regulator diodes in hermetically sealed SOD66 (DO-41) packages. Transient voltage suppressor in a DFN1006-2 (SOD882) ultra small and leadless Surface-Mounted Device (SMD) package designed to protect one line against high surge currents and other transients. General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD) plasic package. Low-power voltage regulator diodes in small hermetically sealed glass SOD80C Surface-Mounted Device (SMD) packages. The diodes are available in the normalized E24 ±2 % (BZV55-B) and approximately ±5 % (BZV55-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 V to 75 V. Low-power voltage regulator diodes encapsulated in an ultra small SOD523 plastic SMD package. Medium-power voltage regulator diodes in small hermetically sealed leaded SOD66 (DO-41) glass packages. P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Epitaxial medium-speed switching diode with a low leakage current in a small SOT23 plastic SMD package. General purpose diode fabricated in planar technology and encapsulated in a very small SOD323 (SC-76) plastic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. Low-current voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. NPN switching transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN general-purpose transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP general-purpose transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. General-purpose dual Schottky diode in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages. The diodes are available in the normalized E24 +- 2 pct. (BZX79-B) and approx. +- 5 pct. (BZX79-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V. 4-bit wide monolithic bidirectional ESD transient voltage suppressor in a six lead SOT457 (SC-74) package. The 74AVC1T45 is a single bit, dual supply transceiver with 3-state output that enables bidirectional level translation. It features two 1-bit input-output ports (A and B), a direction control input (DIR) and dual supply pins (VCC(A)and VCC(B)). Both VCC(A)and VCC(B)can be supplied at any voltage between 0.8 V and 3.6 V making the device suitable for translating between any of the low voltage nodes (0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V and 3.3 V). Pins A and DIR are referenced to VCC(A)and pin B is referenced to VCC(B). A HIGH on DIR allows transmission from A to B and a LOW on DIR allows transmission from B to A. Low-power voltage regulator diodes in small hermetically sealed glass SOD80C Surface-Mounted Device (SMD) packages. The diodes are available in the normalized E24 ±2 % (BZV55-B) and approximately ±5 % (BZV55-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 V to 75 V. P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. NPN low VCEsattransistor in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. Low-power general purpose voltage regulator diodes in a very small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Low-current voltage regulator diodes in a small SOT23 Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD) plastic package. NPN medium power transistors in a SOT223 (SC-73) flat lead Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection in a DFN0603-2 (SOD972E) leadless ultra small Surface-Mounted Device (SMD) package. NPN general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. This unidirectional ESD protection device is designed to protect high-speed interfaces such as SuperSpeed USB 3.2 at 10 Gbps, HDMI, DisplayPort, external Serial Advanced Technology Attachment (eSATA), Low Voltage Differential Signaling (LVDS), and Gigabit Multimedia Serial Link (GMSL) Serializer/Deserializer (SerDes) against ElectroStatic Discharge (ESD). Low-power voltage regulator diodes encapsulated in an ultra small SOD523 plastic SMD package. Low-power voltage regulator diodes encapsulated in an ultra small SOD523 plastic SMD package. NPN Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP/PNP Resistor-Equipped Transistors (RET) in a very SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD) plasic package. NPN Darlington transistor in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages. The diodes are available in the normalized E24 +- 2 pct. (BZX79-B) and approx. +- 5 pct. (BZX79-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V. High-voltage switching diode, encapsulated in an SOD123 small Surface-Mounted Device (SMD) plastic package. NPN medium power transistor in a SOT223 Surface-Mounted Device (SMD) plastic package. PNP complement: BCP69. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. High-speed switching double diode, encapsulated in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. Bidirectional ElectroStatic Discharge (ESD) protection diode in a very small SOD323 (SC-76) SMD plastic package designed to protect one signal line from the damage caused by ESD and other transients. Low-power general purpose voltage regulator diodes in a very small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. The 74AUP1G58 is a configurable multiple function gate with Schmitt-trigger inputs. The device can be configured as any of the following logic functions AND, OR, NAND, NOR, XOR, inverter and buffer; using the 3-bit input. All inputs can be connected directly to VCCor GND. This device ensures very low static and dynamic power consumption across the entire VCCrange from 0.8 V to 3.6 V. This device is fully specified for partial power down applications using IOFF. The IOFFcircuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down. This bidirectional ESD protection device is designed to protect high-speed interfaces such as SuperSpeed USB 3.2 at 10 Gbps, HDMI, DisplayPort, external Serial Advanced Technology Attachment (eSATA), Low Voltage Differential Signaling (LVDS), and Gigabit Multimedia Serial Link (GMSL) Serializer/Deserializer (SerDes) against ElectroStatic Discharge (ESD). PNP medium power transistors in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD) plastic package. General-purpose Schottky diode in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. 400 W unidirectional Transient Voltage Suppressor (TVS) in a SOD123W small and flat lead low-profile Surface-Mounted Device (SMD) plastic package, designed for transient overvoltage protection. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP/PNP double Resistor-Equipped Transistor (RET) in a ultra small flat lead SOT666 Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD) plastic package. NPN general-purpose transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Low-current voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. Medium-power voltage regulator diodes in small hermetically sealed leaded SOD66 (DO-41) glass packages. ESD protection device in a small SOT323 Surface-Mounted Device (SMD) plastic package, designed to protect two automotive in-vehicle network bus lines from the damage caused by ElectroStatic Discharge (ESD) and other transients. NPN low VCEsattransistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. NPN general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. The 74LVC1G125 is a single buffer/line driver with 3-state output. Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of these devices as translators in mixed 3.3 V and 5 V environments. Medium-power voltage regulator diodes in small hermetically sealed leaded SOD66 (DO-41) glass packages. Low-current voltage regulator diodes in a small SOT23 Surface-Mounted Device (SMD) plastic package. Planar Schottky barrier diode with an integrated guard ring for stress protection, in a very small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. PNP medium power transistors in a SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra-high performance, low loss, high efficiency power conversion applications. The Merged PiN Schottky (MPS) diode delivered as bare die in Tape and Reel (T & R) offers temperature independent capacitive turn-off, zero recovery switching behavior combined with an outstanding figure-of-merit (QCx VF) and improves the robustness expressed in a high IFSM. General-purpose Zener diodes in a SOD323 (SC-76) very small Surface-Mounted Device (SMD) plastic package. Low-current voltage regulator diodes in a small SOT23 Surface-Mounted Device (SMD) plastic package. The 74LVC1G126 is a single buffer/line driver with 3-state output. Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of these devices as translators in mixed 3.3 V and 5 V environments. Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise and fall times. This device is fully specified for partial power down applications using IOFF. The IOFFcircuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down. The 74LVC1G32 is a single 2-input OR gate. Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of these devices as translators in mixed 3.3 V and 5 V environments. Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise and fall times. This device is fully specified for partial power down applications using IOFF. The IOFFcircuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down. General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD) plastic package. Unidirectional ElectroStatic Discharge (ESD) protection diode in a very small Surface-Mounted Device (SMD) plastic package designed to protect one signal line from the damage caused by ESD and transient overvoltage. Low-current voltage regulator diodes in a small SOT23 Surface-Mounted Device (SMD) plastic package. The 74LVC1GU04 is a single unbuffered inverter. The input can be driven from either 3.3 V or 5 V devices. This feature allows the use of this device in a mixed 3.3 V and 5 V environment. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Dual high-voltage switching diodes, encapsulated in a small SOT143B Surface-Mounted Device (SMD) plastic package. PNP high-voltage low VCEsattransistor in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package. Low-power general purpose voltage regulator diodes in a very small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. PNP general-purpose transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Low-current voltage regulator diodes in a small SOT23 Surface-Mounted Device (SMD) plastic package. Planar Schottky barrier diode encapsulated in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. High-speed switching double diode, encapsulated in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes encapsulated in an ultra small SOD523 plastic SMD package. NPN high-voltage transistor in a SOT23 plastic package. Monolithic transient voltage suppressor diode in a six lead SOT457 (SC-74) package for 4-bit wide ESD transient suppression at 6.2 V level. High-voltage switching diode in an ultra small SOD523 (SC-72) flat lead Surface-Mounted Device (SMD) plastic package. High-speed switching diode, encapsulated in a ultra small and flat lead SOD523 (SC-79) Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. PNP Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. NPN/PNP low VCEsattransistor pair in an SC-74 (SOT457) plastic package. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages. The diodes are available in the normalized E24 +- 2 pct. (BZX79-B) and approx. +- 5 pct. (BZX79-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V. This unidirectional ESD protection device is designed to protect high-speed interfaces such as SuperSpeed USB 3.2 at 10 Gbps, HDMI, DisplayPort, external Serial Advanced Technology Attachment (eSATA), Low Voltage Differential Signaling (LVDS), and Gigabit Multimedia Serial Link (GMSL) Serializer/Deserializer (SerDes) against ElectroStatic Discharge (ESD). High-speed switching diode, encapsulated in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP low VCEsattransistor in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in small hermetically sealed glass SOD80C Surface-Mounted Device (SMD) packages. The diodes are available in the normalized E24 ±2 % (BZV55-B) and approximately ±5 % (BZV55-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 V to 75 V. PNP Resistor-Equipped Transistor (RET) in a leadless SOT23 Surface-Mounted Device (SMD) plastic package. Low voltage regulator diodes in hermetically sealed SOD66 (DO-41) packages. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. NPN/NPN general-purpose transistor pair in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOD323 (SC-76) very small Surface-Mounted Device (SMD) plastic package. PNP general-purpose transistors in a very small SOT323 (SC-70), Surface-Mounted Device (SMD) plastic package. High-speed switching double diode, encapsulated in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection encapsulated in a small SOD323F (SC-90) Surface-Mounted Device (SMD) plastic package. PNP Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. Bidirectional ElectroStatic Discharge (ESD) protection diode in a very small SOD323 (SC-76) SMD plastic package designed to protect one signal line from the damage caused by ESD and other transients. PNP Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic packages. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN general-purpose transistors in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. NPN high-voltage transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. NPN/NPN general-purpose double transistor in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN/PNP Resistor-Equipped double Transistor (RET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. NPN medium power transistors in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. PNP Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. Low-current voltage regulator diodes in a small SOT23 Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Three-terminal shunt regulator family with an output voltage range between Vref= 1.24 V and 14 V, to be set by two external resistors. General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD) plastic package. Low-current voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. High performance voltage regulator diodes in a small SOT23 (TO-236AB), Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages. The diodes are available in the normalized E24 +- 2 pct. (BZX79-B) and approx. +- 5 pct. (BZX79-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V. General-purpose dual Schottky diode in a small SOT323 Surface-Mounted Device (SMD) plastic package. NPN low VCEsattransistor in a SOT89 (SC-62) medium power and flat lead plastic package. Low-power voltage regulator diodes encapsulated in an ultra small SOD523 plastic SMD package. NPN transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages. The diodes are available in the normalized E24 +- 2 pct. (BZX79-B) and approx. +- 5 pct. (BZX79-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V. Low-current voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. PNP medium power transistors in a SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. NPN medium power transistors in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. Dual high-voltage switching diodes, encapsulated in a small SOT143B Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes encapsulated in an ultra small SOD523 plastic SMD package. NPN switching transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Triple high-voltage switching diodes, encapsulated in a SOT457 (SC-74/TSOP6) small Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes encapsulated in an ultra small SOD523 plastic SMD package. P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 160 A, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications. NPN medium power transistors in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. NPN/NPN double Resistor-Equipped Transistor (RET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package. This bidirectional ESD protection device is designed to protect high-speed interfaces such as SuperSpeed USB 3.2 at 10 Gbps, HDMI, DisplayPort, external Serial Advanced Technology Attachment (eSATA), Low Voltage Differential Signaling (LVDS), and Gigabit Multimedia Serial Link (GMSL) Serializer/Deserializer (SerDes) against ElectroStatic Discharge (ESD). The 74AUP1G79 is a single positive-edge triggered D-type flip-flop. Data at the D-input that meets the set-up and hold time requirements on the LOW-to-HIGH clock transition will be stored in the flip-flop and appear at the Q output.. Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise and fall times. This device ensures very low static and dynamic power consumption across the entire VCCrange from 0.8 V to 3.6 V. This device is fully specified for partial power down applications using IOFF. The IOFFcircuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. The 74AUP1G04 is a single inverter. NPN Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP low VCEsattransistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. 400 W unidirectional Transient Voltage Suppressor (TVS) in a SOD123W small and flat lead low-profile Surface-Mounted Device (SMD) plastic package, designed for transient overvoltage protection. Low-current voltage regulator diodes in a small SOT23 Surface-Mounted Device (SMD) plastic package. General-purpose dual Schottky diode in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. The 74AUP1G0832 is a single 3-input AND-OR gate. Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise and fall times. This device ensures very low static and dynamic power consumption across the entire VCCrange from 0.8 V to 3.6 V. This device is fully specified for partial power down applications using IOFF. The IOFFcircuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down. NPN general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. The 74LVC1G79 is a single positive-edge triggered D-type flip-flop. Data at the D-input that meets the set-up and hold time requirements on the LOW-to-HIGH clock transition will be stored in the flip-flop and appear at the Q output. Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of these devices as translators in mixed 3.3 V and 5 V environments. Planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. NPN transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD) plastic package. This bidirectional ESD protection device is designed to protect high-speed interfaces such as SuperSpeed USB 3.2, HDMI, DisplayPort, external Serial Advanced Technology Attachment (eSATA), Low Voltage Differential Signaling (LVDS), and Gigabit Multimedia Serial Link (GMSL) Serializer/Deserializer (SerDes) against ElectroStatic Discharge (ESD). High-speed switching diode, encapsulated in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN Resistor-Equipped Transistor (RET) family in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN/NPN matched double transistor in a very small Surface-Mounted Device (SMD) SOT363 (SC-88) plastic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages. The diodes are available in the normalized E24 +- 2 pct. (BZX79-B) and approx. +- 5 pct. (BZX79-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V. NPN/PNP Resistor-Equipped double Transistor (RET) family in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD) plasic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia's unique "SchottkyPlus" technology delivers high efficiency, low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies. NPN Resistor-Equipped Transistor (RET) family in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. NPN Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD) plasic package. PNP general-purpose transistor in a small SOT23 plastic package. NPN complement: PMBTA06. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. PNP general-purpose transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP medium power transistors in a medium power SOT223 (SC73) Surface-Mounted Device (SMD) plastic package. Low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode in a very small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package designed to protect one signal line from the damage caused by ESD and other transients. PNP Resistor-Equipped Transistor (RET) family in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. NPN/PNP Resistor-Equipped double Transistor (RET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package. Low voltage regulator diodes in hermetically sealed SOD66 (DO-41) packages. NPN/NPN general-purpose double transistor in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD) plastic package. PNP high-voltage low VCEsattransistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. NPN low VCEsatBreakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS5240X. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. Planar Schottky barrier rectifier with an integrated guard ring for stress protection encapsulated in a small SOD123 Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages. The diodes are available in the normalized E24 +- 2 pct. (BZX79-B) and approx. +- 5 pct. (BZX79-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V. NPN/PNP Resistor-Equipped double Transistor (RET) in a very small SOT363 (TSSOP6) Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Epitaxial, medium-speed switching diode with a low-leakage current encapsulated in a small SOD323 SMD plastic package. The 74LVC1G02 is a single 2-input NOR gate. Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of these devices as translators in mixed 3.3 V and 5 V environments. Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise and fall times. This device is fully specified for partial power down applications using IOFF. The IOFFcircuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down. N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 400 W unidirectional Transient Voltage Suppressor (TVS) in a SOD123W small and flat lead low-profile Surface-Mounted Device (SMD) plastic package, designed for transient overvoltage protection. NPN/NPN matched double transistor in a SOT363 (SC-88) very small Surface-Mounted Device (SMD) plastic package. The transistors are fully isolated internally. Epitaxial, medium-speed switching, double diode in a small SOT23 Surface-Mounted Device (SMD) plastic package. The diodes are connected in series. PNP general-purpose transistors in a small SOT23 (TO-236AB), Surface-Mounted Device (SMD) plastic package. Low voltage regulator diodes in hermetically sealed SOD66 (DO-41) packages. General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD) plasic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages. The diodes are available in the normalized E24 +- 2 pct. (BZX79-B) and approx. +- 5 pct. (BZX79-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V. PNP/PNP matched double transistor in an an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package. The transistors are fully isolated internally. Transient voltage suppressor in a DFN1610-2 (SOD1610-1) ultra small and leadless Surface-Mounted Device (SMD) package designed to protect one line against high surge currents and other transients. NPN/NPN double Resistor-Equipped Transistor (RET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD323 (SC-76) very small Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. Low-current voltage regulator diodes in a small SOT23 Surface-Mounted Device (SMD) plastic package. Low-power general purpose voltage regulator diodes in a very small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD) plastic package. Low-current voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. NPN medium power transistors in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. NPN general-purpose transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP low VCEsatBreakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4240X. Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection in a DFN0603-2 (SOD972E) leadless ultra small Surface-Mounted Device (SMD) package. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP Resistor-Equipped Transistor (RET) family in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOSFET technology. NPN low VCEsattransistor in a SOT89 plastic package. NPN general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN low VCEsattransitor in a medium power SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. PNP high-voltage low VCEsattransistor in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package. Common-mode ElectroMagnetic Interference (EMI) filters with integrated ElectroStatic Discharge (ESD) protection for one, two and three differential channels. The devices are designed to provide low insertion loss for differential high-speed signals on each channel while unwanted common-mode signals are attenuated. PNP general-purpose transistors in a small SOT23 (TO-236AB) or SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. Trench Maximum Efficiency General Application (MEGA) Schottky barrier rectifier, encapsulated in a CFP15 (SOT1289) power and flat lead Surface-Mounted Device (SMD) plastic package. 240 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications. NPN switching transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in small hermetically sealed glass SOD80C Surface-Mounted Device (SMD) packages. The diodes are available in the normalized E24 ±2 % (BZV55-B) and approximately ±5 % (BZV55-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 V to 75 V. Planar Schottky barrier diode rectifier with an integrated guard ring for stress protection, encapsulated in an SOD123 small Surface-Mounted Device (SMD) plastic package. The 74AVC4T245 is an 4-bit, dual supply transceiver that enables bidirectional level translation. The device can be used as two 2-bit transceivers or as a 4-bit transceiver. It features four 2-bit input-output ports (nAn and nBn), a direction control input (nDIR), an output enable input (nOE) and dual supply pins (VCC(A)and VCC(B)). Both VCC(A)and VCC(B)can be supplied at any voltage between 0.8 V and 3.6 V making the device suitable for translating between any of the low voltage nodes (0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V and 3.3 V). Pins nAn, nOEand nDIR are referenced to VCC(A)and pins nBn are referenced to VCC(B). A HIGH on nDIR allows transmission from nAn to nBn and a LOW on nDIR allows transmission from nBn to nAn. The output enable input (nOE) can be used to disable the outputs so the buses are effectively isolated. The 74AUP1T98 is a configurable multiple function gate with level translating, Schmitt-trigger inputs. The device can be configured as any of the following logic functions MUX, AND, OR, NAND, NOR, inverter and buffer; using the 3-bit input. All inputs can be connected directly to VCCor GND. Low threshold Schmitt trigger inputs allow these devices to be driven by 1.8 V logic levels in 3.3 V applications. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. The 74LVC1G66 is a single-pole, single-throw analog switch with two input/output terminals (nY and nZ) and a digital enable input (nE). When nE is LOW, the analog switch is turned off. Control inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of these devices as translators in mixed 3.3 V and 5 V environments. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. NPN switching transistor in a SOT23 plastic package. Planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP/PNP matched double transistor in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Low-power voltage regulator diodes in small hermetically sealed glass SOD80C Surface-Mounted Device (SMD) packages. The diodes are available in the normalized E24 ±2 % (BZV55-B) and approximately ±5 % (BZV55-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 V to 75 V. Low-power voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages. The diodes are available in the normalized E24 +- 2 pct. (BZX79-B) and approx. +- 5 pct. (BZX79-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V. The 74LVC1G157 is a single 2-input multiplexer. Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of these devices as translators in mixed 3.3 V and 5 V environments. NPN/PNP general-purpose transistor pair in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. Three-terminal shunt regulator family with an output voltage range between Vref= 1.24 V and 14 V, to be set by two external resistors. Low-power voltage regulator diodes encapsulated in an ultra small SOD523 plastic SMD package. Low-power voltage regulator diodes in small hermetically sealed glass SOD80C Surface-Mounted Device (SMD) packages. The diodes are available in the normalized E24 ±2 % (BZV55-B) and approximately ±5 % (BZV55-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 V to 75 V. Medium-power voltage regulator diodes in small hermetically sealed leaded SOD66 (DO-41) glass packages. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. High-voltage switching diode encapsulated in a small SOT23 Surface-Mounted Device (SMD) plastic package. High-voltage switching diode, fabricated in planar technology, and encapsulated in a SOD523 (SC-79) ultra small Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD) plastic package. PNP low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP general-purpose transistors in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in small hermetically sealed glass SOD80C Surface-Mounted Device (SMD) packages. The diodes are available in the normalized E24 ±2 % (BZV55-B) and approximately ±5 % (BZV55-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 V to 75 V. Medium-power voltage regulator diodes in small hermetically sealed leaded SOD66 (DO-41) glass packages. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. NPN/NPN double Resistor-Equipped Transistor (RET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. PNP transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. Low voltage regulator diodes in hermetically sealed SOD66 (DO-41) packages. LED driver consisting of a resistor-equipped NPN transistor with two diodes on one chip in a medium power SOT223 (SC-73) plastic package. The 74LVC1G10 provides a low-power, low-voltage single 3-input NAND gate. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. PNP general-purpose transistors in a small SOT23 (TO-236AB) or SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. NPN/NPN matched double transistor in a SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. The transistors are fully isolated internally. PNP general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Transient voltage suppressor in a DFN1610-2 (SOD1610-1) ultra small and leadless Surface-Mounted Device (SMD) package designed to protect one line against high surge currents and other transients. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. The 74AVC4T245-Q100 is an 4-bit, dual supply transceiver that enables bidirectional level translation. The device can be used as two 2-bit transceivers or as a 4-bit transceiver. It features four 2-bit input-output ports (nAn and nBn), a direction control input (nDIR), an output enable input (nOE) and dual supply pins (VCC(A)and VCC(B)). Both VCC(A)and VCC(B)can be supplied at any voltage between 0.8 V and 3.6 V making the device suitable for translating between any of the low voltage nodes (0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V and 3.3 V). Pins nAn, nOEand nDIR are referenced to VCC(A)and pins nBn are referenced to VCC(B). A HIGH on nDIR allows transmission from nAn to nBn and a LOW on nDIR allows transmission from nBn to nAn. The output enable input (nOE) can be used to disable the outputs so the buses are effectively isolated. The device is fully specified for partial power-down applications using IOFF. The IOFFcircuitry disables the output, preventing any damaging backflow current through the device when it is powered down. In suspend mode when either VCC(A)or VCC(B)are at GND level, both nAn and nBn are in the high-impedance OFF-state. Planar Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a very small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. PNP general-purpose transistors in a very small SOT323 (SC-70), Surface-Mounted Device (SMD) plastic package. 500 mA, 50 V NPN/PNP double Resistor-Equipped Transistor (RET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages. The diodes are available in the normalized E24 +- 2 pct. (BZX79-B) and approx. +- 5 pct. (BZX79-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V. NPN general-purpose transistors in a small SOT23 (TO236AB) Surface-Mounted Device (SMD) plastic package. PNP/PNP matched double transistor in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. General-purpose Schottky diode in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. Low-current voltage regulator diodes in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 400 W unidirectional Transient Voltage Suppressor (TVS) in a SOD123W small and flat lead low-profile Surface-Mounted Device (SMD) plastic package, designed for transient overvoltage protection. Low voltage regulator diodes in hermetically sealed SOD66 (DO-41) packages. P-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. PNP/PNP matched double transistor in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. The transistors are fully isolated internally. Planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. NPN medium power transistors in a medium power SOT223 (SC73) Surface-Mounted Device (SMD) plastic package. Medium-power voltage regulator diodes in small hermetically sealed leaded SOD66 (DO-41) glass packages. General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD) plastic package. Planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD) plasic package. Planar Schottky barrier diode encapsulated in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. NPN transistors in a plastic SOT23 package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. Low-power general purpose voltage regulator diodes in a very small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD) plastic package. Low-power general purpose voltage regulator diodes in a very small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. NPN switching transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. High-speed switching diode, encapsulated in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. NPN/NPN double transistor in a SOT666 ultra small and flat lead Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in small hermetically sealed glass SOD80C Surface-Mounted Device (SMD) packages. The diodes are available in the normalized E24 ±2 % (BZV55-B) and approximately ±5 % (BZV55-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 V to 75 V. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Bidirectional ElectroStatic Discharge (ESD) protection diode in very small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package designed to protect one signal line from the damage caused by ESD and other transients. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. NPN switching transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in small hermetically sealed glass SOD80C Surface-Mounted Device (SMD) packages. The diodes are available in the normalized E24 ±2 % (BZV55-B) and approximately ±5 % (BZV55-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 V to 75 V. Medium-power voltage regulator diodes in small hermetically sealed leaded SOD66 (DO-41) glass packages. NPN/PNP Resistor-Equipped double Transistors (RET) family in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. Low-current voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. Low-power general purpose voltage regulator diodes in a very small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. Planar Schottky barrier diodes with an integrated guard ring for stress protection, encapsulated in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. 400 W unidirectional Transient Voltage Suppressor (TVS) in a SOD123W small and flat lead low-profile Surface-Mounted Device (SMD) plastic package, designed for transient overvoltage protection. General purpose switching diode, encapsulated in a small SOT23 Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. PNP Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device(SMD) plastic package. Low-power voltage regulator diodes encapsulated in an ultra small SOD523 plastic SMD package. Three-terminal shunt regulator family with an output voltage range between Vref= 1.24 V and 14 V, to be set by two external resistors. Single high-speed switching diode, fabricated in planar technology, and encapsulated in a small hermetically sealed glass SOD80C Surface-Mounted Device (SMD) package. High-speed switching diode, encapsulated in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN switching transistor in an SC-70 (SOT323) plastic package. PNP general-purpose transistors in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD) plasic package. Low-power voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages. The diodes are available in the normalized E24 +- 2 pct. (BZX79-B) and approx. +- 5 pct. (BZX79-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V. NPN medium power transistors in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. The 74AHC1G04; 74AHCT1G04 is a single inverter. Inputs are overvoltage tolerant. This feature allows the use of these devices as translators in mixed voltage environments. PNP low VCEsattransistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. The 74LVC2G04 is a dual inverter. Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of these devices as translators in mixed 3.3 V and 5 V environments. Medium-power voltage regulator diodes in small hermetically sealed leaded SOD66 (DO-41) glass packages. NPN high-voltage transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD) plasic package. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. The 74AUP1T45 is a single bit transceiver featuring two data input-outputs (A and B), a direction control input (DIR) and dual supply pins (VCC(A)and VCC(B)) which enable bidirectional level translation. Both VCC(A)and VCC(B)can be supplied at any voltage between 1.1 V and 3.6 V making the device suitable for interfacing between any of the low voltage nodes (1.2 V, 1.5 V, 1.8 V, 2.5 V and 3.3 V). Pins A and DIR are referenced to VCC(A)and pin B is referenced to VCC(B). A HIGH on DIR allows transmission from A to B and a LOW on DIR allows transmission from B to A. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Femtofarad bidirectional ElectroStatic Discharge (ESD) protection diode in a leadless ultra small SOD882 Surface-Mounted Device (SMD) plastic package designed to protect one signal line from the damage caused by ESD and other transients. The combination of extremely low capacitance, high ESD maximum rating and ultra small package makes the device ideal for high-speed data line protection and antenna protection applications. NPN transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN/PNP double Resistor-Equipped Transistor (RET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package. P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. PNP general-purpose transistors in a very small SOT323 (SC-70), Surface-Mounted Device (SMD) plastic package. The 74AUP1G374 is a single D-type flip-flop; positive-edge trigger (3-state). Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise and fall times. This device ensures very low static and dynamic power consumption across the entire VCCrange from 0.8 V to 3.6 V. This device is fully specified for partial power down applications using IOFF. The IOFFcircuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down. PNP Resistor-Equipped Transistor (RET) family in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. High-voltage switching diode encapsulated in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP medium frequency transistor in a SOT23 plastic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. This unidirectional ESD protection device is designed to protect high-speed interfaces such as SuperSpeed USB 3.2, HDMI, DisplayPort, external Serial Advanced Technology Attachment (eSATA), Low Voltage Differential Signaling (LVDS), and Gigabit Multimedia Serial Link (GMSL) Serializer/Deserializer (SerDes) against ElectroStatic Discharge (ESD). Low-current voltage regulator diodes in a small SOT23 Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. This unidirectional ESD protection device is designed to protect high-speed interfaces such as SuperSpeed USB 3.2, HDMI, DisplayPort, external Serial Advanced Technology Attachment (eSATA), Low Voltage Differential Signaling (LVDS), and Gigabit Multimedia Serial Link (GMSL) Serializer/Deserializer (SerDes) against ElectroStatic Discharge (ESD). NPN Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages. The diodes are available in the normalized E24 +- 2 pct. (BZX79-B) and approx. +- 5 pct. (BZX79-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V. Low-power voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages. The diodes are available in the normalized E24 +- 2 pct. (BZX79-B) and approx. +- 5 pct. (BZX79-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V. Unidirectional ElectroStatic Discharge (ESD) protection diode in a SOD882 leadless ultra small Surface Mounted Device (SMD) plastic package, designed to protect one signal line from the damage caused by ESD and other transients. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Trench Maximum Efficiency General Application (MEGA) Schottky barrier rectifier encapsulated in a CFP15 (SOT1289) power and flat lead Surface-Mounted Device (SMD) plastic package. NPN high-voltage transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP high-voltage transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages. The diodes are available in the normalized E24 +- 2 pct. (BZX79-B) and approx. +- 5 pct. (BZX79-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V. NPN/PNP double Resistor-Equipped Transistor (RET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. Unidirectional double ElectroStatic Discharge (ESD) protection diode in a common anode configuration, encapsulated in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. The device is designed for ESD and transient overvoltage protection of up to two signal lines. Low-power voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages. The diodes are available in the normalized E24 +- 2 pct. (BZX79-B) and approx. +- 5 pct. (BZX79-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V. High-speed switching diode, encapsulated in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. The 74AUP1G126 provides a single non-inverting buffer/line driver with 3-state output. The 3-state output is controlled by the output enable input (OE). A LOW level at pin OE causes the output to assume a high-impedance OFF-state. This device has the input-disable feature, which allows floating input signals. The inputs are disabled when the output enable input OE is LOW. PNP general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Low-power general purpose voltage regulator diodes in a very small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. PNP general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD)plastic package. NPN low VCEsattransistor in a SOT23 plastic package. Low-power voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages. The diodes are available in the normalized E24 +- 2 pct. (BZX79-B) and approx. +- 5 pct. (BZX79-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V. General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD) plastic package. PNP Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD) plastic package. PNP medium power transistors in a medium power SOT223 (SC73) Surface-Mounted Device (SMD) plastic package. PNP high-voltage low VCEsattransistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. Medium-power voltage regulator diodes in small hermetically sealed leaded SOD66 (DO-41) glass packages. PNP high-voltage transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. Three-terminal shunt regulator family with an output voltage range between NPN general-purpose transistor in a very small SOT323 (SC70) Surface-Mounted Device (SMD) plastic package. Low-current voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. This unidirectional ESD protection device is designed to protect high-speed interfaces such as SuperSpeed USB 3.2 at 10 Gbps, HDMI, DisplayPort, external Serial Advanced Technology Attachment (eSATA), Low Voltage Differential Signaling (LVDS), and Gigabit Multimedia Serial Link (GMSL) Serializer/Deserializer (SerDes) against ElectroStatic Discharge (ESD). This bidirectional ESD protection device is designed to protect high-speed interfaces such as SuperSpeed USB 3.2 at 10 Gbps, HDMI, DisplayPort, external Serial Advanced Technology Attachment (eSATA), Low Voltage Differential Signaling (LVDS), and Gigabit Multimedia Serial Link (GMSL) Serializer/Deserializer (SerDes) against ElectroStatic Discharge (ESD). NPN Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP general-purpose transistors in a very small SOT323 (SC-70), Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOD323F (SC-90) very small and flat lead Surface Mounted Device (SMD) plastic package. NPN general-purpose transistors in a small SOT23 (TO236AB) Surface-Mounted Device (SMD) plastic package. NPN general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Low voltage regulator diodes in hermetically sealed SOD66 (DO-41) packages. Planar medium power Schottky barrier single diode with an integrated guard ring for stress protection, encapsulated in a very small SOD323 (SC-76) Surface-Mounted Device SMD plastic package. PNP general-purpose transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. Medium-power voltage regulator diodes in small hermetically sealed leaded SOD66 (DO-41) glass packages. NPN Darlington transistor in an SOT223 Surface-Mounted Device (SMD) plastic package. NPN Resistor-Equipped Transistor (RET) family in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. Planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a SOD323 (SC-76) very small SMD plastic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. Low voltage regulator diodes in hermetically sealed SOD66 (DO-41) packages. PNP general-purpose transistors in a very small SOT323 (SC-70), Surface-Mounted Device (SMD) plastic package. NPN Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. Medium-power voltage regulator diodes in small hermetically sealed leaded SOD66 (DO-41) glass packages. Low-power voltage regulator diodes in small hermetically sealed glass SOD80C Surface-Mounted Device (SMD) packages. The diodes are available in the normalized E24 ±2 % (BZV55-B) and approximately ±5 % (BZV55-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 V to 75 V. NPN transistor in a SOT23 plastic package. Planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in an SOD123 small Surface-Mounted Device (SMD) plastic package. High-speed switching diode, encapsulated in a small SOT23 Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages. The diodes are available in the normalized E24 +- 2 pct. (BZX79-B) and approx. +- 5 pct. (BZX79-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V. NPN transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP Resistor-Equipped Transistor (RET) family in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP Resistor-Equipped Transistors (RET) family. The IP4234CZ6 is designed to protect Input/Output (I/O) USB 2.0 ports, that are sensitive to capacitive loads, from being damaged by ElectroStatic Discharge (ESD). The π-filter structure is implemented with a small series resistor to provide the necessary protection to signal and supply components from ESD voltages greater than +-8 kV contact discharge according IEC 61000-4-2, level 4. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. 400 W unidirectional Transient Voltage Suppressor (TVS) in a SOD123W small and flat lead low-profile Surface-Mounted Device (SMD) plastic package, designed for transient overvoltage protection. This unidirectional ESD protection device is designed to protect high-speed interfaces such as SuperSpeed USB 3.2 at 10 Gbps, HDMI, DisplayPort, external Serial Advanced Technology Attachment (eSATA), Low Voltage Differential Signaling (LVDS), and Gigabit Multimedia Serial Link (GMSL) Serializer/Deserializer (SerDes) against ElectroStatic Discharge (ESD). Low-power voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. High-speed switching diode, encapsulated in small SOT23 Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in small hermetically sealed glass SOD80C Surface-Mounted Device (SMD) packages. The diodes are available in the normalized E24 ±2 % (BZV55-B) and approximately ±5 % (BZV55-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 V to 75 V. General-purpose Zener diodes in a SOD323F (SC-90) very small and flat lead Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages. The diodes are available in the normalized E24 +- 2 pct. (BZX79-B) and approx. +- 5 pct. (BZX79-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. NPN high-voltage transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes encapsulated in an ultra small SOD523 plastic SMD package. NPN/NPN matched double transistor in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. The 74AUP1G175 is a single positive edge triggered D-type flip-flop with individual data (D), clock (CP), master reset (MR) inputs, and Q output. The D-input that meets the set-up and hold time requirements on the LOW-to-HIGH clock transition will be stored in the flip-flop and appear at the Q output. A LOW onMRcauses the flip-flop and output to be reset to LOW. Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise and fall times. This device ensures very low static and dynamic power consumption across the entire VCCrange from 0.8 V to 3.6 V. This device is fully specified for partial power down applications using IOFF. The IOFFcircuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down. Low-current voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. Monolithic transient voltage suppressor diode in a six lead SOT457 (SC-74) package for 4-bit wide ESD transient suppression at 20 V level. Low-power voltage regulator diodes in small hermetically sealed glass SOD80C Surface-Mounted Device (SMD) packages. The diodes are available in the normalized E24 ±2 % (BZV55-B) and approximately ±5 % (BZV55-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 V to 75 V. NPN low VCEsattransistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN/PNP low VCEsattransistor pair in an SC-74 (SOT457) plastic package. NPN Resistor-Equipped Transistor (RET) family in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP low VCEsattransistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP general-purpose transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. Low-power general purpose voltage regulator diodes in a very small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. NPN general-purpose transistors in a small SOT23 Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in an SOD523 (SC-79) ultra small flat lead Surface-Mounted Device (SMD) plastic package. NPN general-purpose transistors in a small SOT23 Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD) plastic package. NPN high-voltage transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD) plastic package. NPN general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD) plastic package. Low-current voltage regulator diodes in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN/NPN Resistor-Equipped Transistors (RET). Planar Schottky barrier dual diode with an integrated guard ring for stress protection, encapsulated in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. Low-power general purpose voltage regulator diodes in a very small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. Planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in an SOD123 small Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP transistor in a SOT323 plastic package. NPN/NPN matched double transistor in a very small Surface-Mounted Device (SMD) SOT363 (SC-88) plastic package. The transistors in the SOT363 package are fully isolated internally. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN Resistor-Equipped Transistor (RET) family in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in small hermetically sealed glass SOD80C Surface-Mounted Device (SMD) packages. The diodes are available in the normalized E24 ±2 % (BZV55-B) and approximately ±5 % (BZV55-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 V to 75 V. Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia's unique "SchottkyPlus" technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes encapsulated in an ultra small SOD523 plastic SMD package. PNP general-purpose transistors in a very small SOT323 (SC-70), Surface-Mounted Device (SMD) plastic package. Trench Maximum Efficiency General Application (MEGA) Schottky barrier rectifier, encapsulated in a CFP15 (SOT1289) power and flat lead Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in small hermetically sealed glass SOD80C Surface-Mounted Device (SMD) packages. The diodes are available in the normalized E24 ±2 % (BZV55-B) and approximately ±5 % (BZV55-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 V to 75 V. Low-current voltage regulator diodes in a small SOT23 Surface-Mounted Device (SMD) plastic package. Medium-power voltage regulator diodes in small hermetically sealed leaded SOD66 (DO-41) glass packages. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Three-terminal shunt regulator family with an output voltage range between Vref= 1.24 V and 14 V, to be set by two external resistors. NPN Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. Planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP general-purpose double transistors in a small SOT143B Surface-Mounted General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. General-purpose dual Schottky diode in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes encapsulated in an ultra small SOD523 plastic SMD package. Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD523 (SC-79) ultra small and flat lead Surface-Mounted Device (SMD) plastic package. Three-terminal shunt regulator family with an output voltage range between Vref= 1.24 V and 14 V, to be set by two external resistors. 400 W unidirectional Transient Voltage Suppressor (TVS) in a SOD123W small and flat lead low-profile Surface-Mounted Device (SMD) plastic package, designed for transient overvoltage protection. NPN Resistor-Equipped Transistor (RET) family in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. 400 W unidirectional Transient Voltage Suppressor (TVS) in a SOD123W small and flat lead low-profile Surface-Mounted Device (SMD) plastic package, designed for transient overvoltage protection. Low-power voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. The 74LVC1G384 is a single pole, single throw analog switch. It has two input/output terminals (Y and Z) and an enable pin (E). WhenEis HIGH, the analog switch is turned off. Control inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of these devices as translators in mixed 3.3 V and 5 V environments. PNP/PNP general-purpose double transistor in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in small hermetically sealed glass SOD80C Surface-Mounted Device (SMD) packages. The diodes are available in the normalized E24 ±2 % (BZV55-B) and approximately ±5 % (BZV55-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 V to 75 V. High-voltage switching diode encapsulated in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN/PNP double Resistor-Equipped Transistor (RET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. High-speed switching diode, encapsulated in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Low-power voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in small hermetically sealed glass SOD80C Surface-Mounted Device (SMD) packages. The diodes are available in the normalized E24 ±2 % (BZV55-B) and approximately ±5 % (BZV55-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 V to 75 V. Three-terminal shunt regulator family with an output voltage range between Vref= 1.24 V and 14 V, to be set by two external resistors. NPN medium power transistors in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. Low-current voltage regulator diodes in a small SOT23 Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN/PNP general-purpose double transistors in a very small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. PNP general-purpose transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN Resistor-Equipped Transistor (RET) family in Surface-Mounted Device (SMD) plastic packages. Planar Schottky barrier dual diode with an integrated guard ring for stress protection, encapsulated in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. The 74AUP1G38 is a single 2-input NAND gate with open-drain output. Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise and fall times. This device ensures very low static and dynamic power consumption across the entire VCCrange from 0.8 V to 3.6 V. This device is fully specified for partial power down applications using IOFF. The IOFFcircuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down. NPN medium power transistors in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. PNP power transistors in a power SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. Low-power general purpose voltage regulator diodes in a very small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. The 74LVC2GU04 is a dual unbuffered inverter. Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of these devices as translators in mixed 3.3 V and 5 V environments. PNP general-purpose transistors in a small SOT23 (TO-236AB), Surface-Mounted Device (SMD) plastic package. Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD323 (SC-76) very small SMD plastic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. Planar Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD523 (SC-79) ultra small and flat lead Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes encapsulated in an ultra small SOD523 plastic SMD package. PNP low VCEsattransistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. High-speed switching diode, encapsulated in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN low VCEsattransistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. High-speed switching diode, encapsulated in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Unidirectional ElectroStatic Discharge (ESD) protection diode in a SOD882 leadless ultra small Surface Mounted Device (SMD) plastic package, designed to protect one signal line from the damage caused by ESD and other transients. N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages. The diodes are available in the normalized E24 +- 2 pct. (BZX79-B) and approx. +- 5 pct. (BZX79-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V. General-purpose Zener diodes in an SOD523 (SC-79) ultra small flat lead Surface-Mounted Device (SMD) plastic package. NPN/PNP double Resistor-Equipped Transistor (RET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN low VCEsattransistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOD323F (SC-90) very small and flat lead Surface-Mounted Device (SMD) plastic package. This bidirectional ESD protection device is designed to protect high-speed interfaces such as SuperSpeed USB 3.2, HDMI, DisplayPort, external Serial Advanced Technology Attachment (eSATA), Low Voltage Differential Signaling (LVDS), and Gigabit Multimedia Serial Link (GMSL) Serializer/Deserializer (SerDes) against ElectroStatic Discharge (ESD). PNP medium power transistors in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. NPN general-purpose transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. Medium-power voltage regulator diodes in small hermetically sealed leaded SOD66 (DO-41) glass packages. Three-terminal shunt regulator family with an output voltage range between Vref= 1.24 V and 14 V, to be set by two external resistors. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. The 74LVC1G34 is a single buffer. Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of these devices as translators in mixed 3.3 V and 5 V environments. NPN Darlington transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Low-current voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD) plasic package. Low-current voltage regulator diodes in a small SOT23 Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in small hermetically sealed glass SOD80C Surface-Mounted Device (SMD) packages. The diodes are available in the normalized E24 ±2 % (BZV55-B) and approximately ±5 % (BZV55-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 V to 75 V. Low-power voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages. The diodes are available in the normalized E24 +- 2 pct. (BZX79-B) and approx. +- 5 pct. (BZX79-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V. Low-power general purpose voltage regulator diodes in a very small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP/PNP Resistor-Equipped double Transistor (RET) family in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Low leakage switching diode, encapsulated in an SOD123 small Surface-Mounted Device (SMD) plastic package. Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection encapsulated in small SOD123 Surface-Mounted Device (SMD) plastic package. PNP general-purpose transistors in a small SOT23 (TO-236AB), Surface-Mounted Device (SMD) plastic package. 50 A, logic level N-channel enhancement mode MOSFET in 175 °C LFPAK33 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high efficiency applications operating at high switching frequencies. PNP transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. Low-power general purpose voltage regulator diodes in a very small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD) plastic package. NPN general-purpose transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN small-signal Darlington transistor in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD) plastic package. NPN medium frequency transistor in a SOT23 plastic package. Medium-power voltage regulator diodes in small hermetically sealed leaded SOD66 (DO-41) glass packages. PNP transistor in a SOT23 plastic package. Low-power general purpose voltage regulator diodes in a very small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. The BAS28 consists of two high-speed switching diodes, fabricated in planar technology, and encapsulated in the small plastic SMD SOT143 package. The diodes are not connected. High-speed switching diode, encapsulated in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. PNP/PNP Resistor-Equipped double Transistor (RET) family in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. Bidirectional ElectroStatic Discharge (ESD) protection diode in a very small SOD323 (SC-76) SMD plastic package designed to protect one signal line from the damage caused by ESD and other transients. NPN/PNP double Resistor-Equipped Transistor (RET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package. This unidirectional ESD protection device is designed to protect high-speed interfaces such as SuperSpeed USB 3.2 at 10 Gbps, HDMI, DisplayPort, external Serial Advanced Technology Attachment (eSATA), Low Voltage Differential Signaling (LVDS), and Gigabit Multimedia Serial Link (GMSL) Serializer/Deserializer (SerDes) against ElectroStatic Discharge (ESD). Low-current voltage regulator diodes in a small SOT23 Surface-Mounted Device (SMD) plastic package. Bidirectional ElectroStatic Discharge (ESD) protection diode in an ultra-small and flat lead SOD523 plastic package designed to protect one signal line from the damage caused by ESD and other transients. Medium-power voltage regulator diodes in small hermetically sealed leaded SOD66 (DO-41) glass packages. PNP transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. Low-power general purpose voltage regulator diodes in a very small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD) plasic package. Low-power general purpose voltage regulator diodes in a very small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. Medium-power voltage regulator diodes in small hermetically sealed leaded SOD66 (DO-41) glass packages. PNP general-purpose transistors in a very small SOT323 (SC-70), Surface-Mounted Device (SMD) plastic package. PNP general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP general-purpose transistors in a very small SOT323 (SC-70), Surface-Mounted Device (SMD) plastic package. Low-current voltage regulator diodes in a small SOT23 Surface-Mounted Device (SMD) plastic package. This unidirectional ESD protection device is designed to protect high-speed interfaces such as SuperSpeed USB 3.2, HDMI, DisplayPort, external Serial Advanced Technology Attachment (eSATA), Low Voltage Differential Signaling (LVDS), and Gigabit Multimedia Serial Link (GMSL) Serializer/Deserializer (SerDes) against ElectroStatic Discharge (ESD). NPN general-purpose double transistors in a small SOT143B Surface-Mounted Device (SMD) plastic package. PNP Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN/PNP general-purpose transistors in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode in an SOD882 leadless ultra-small plastic package, designed to protect one signal line from the damage caused by ESD and other transients. General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD) plasic package. The 74AUP2G14 is a dual inverter with Schmitt-trigger inputs. This device ensures very low static and dynamic power consumption across the entire VCCrange from 0.8 V to 3.6 V. This device is fully specified for partial power down applications using IOFF. The IOFFcircuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down. NPN general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD)plastic package. Low-power general purpose voltage regulator diodes in a very small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD523 (SC-79) ultra small and flat lead Surface Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. SOT1023A with improved creepage and clearance to meet UL2595 requirements. 300 Amp logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. Part of the ASFETs for Battery Isolation and DC Motor control family and using Nexperia’s unique "SchottkyPlus" technology delivers high efficiency and low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current, particularly suited to battery powered appliance applications. NPN switching transistor in a SOT323 plastic package. Epitaxial, medium-speed switching, double diode in a small SOT23 plastic SMD package. The diodes are in common cathode configuration. N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. PNP general-purpose transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN/PNP double Resistor-Equipped Transistor (RET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN/NPN general-purpose transistor pair in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN/NPN Resistor-Equipped double Transistors (RET) family in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages. The diodes are available in the normalized E24 +- 2 pct. (BZX79-B) and approx. +- 5 pct. (BZX79-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V. General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD) plastic package. NPN BISS (Breakthrough In Small Signal) transistor in a SOT23 plastic package. PNP complement: PMMT591A. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in an SOD523 (SC-79) ultra small flat lead Surface-Mounted Device (SMD) plastic package. NPN/PNP Resistor-Equipped double Transistor (RET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. PNP switching transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN low VCEsattransistor in a SOT89 (SC-62) medium power and flat lead plastic package. PNP Resistor-Equipped Transistor (RET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP general-purpose transistors in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. High-speed switching diode, encapsulated in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes encapsulated in an ultra small SOD523 plastic SMD package. High-speed switching double diode, encapsulated in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD) plastic package. Planar Schottky barrier diode in a SOD523 (SC-79) ultra small Surface-Mounted Device (SMD) plastic package. Unidirectional double ElectroStatic Discharge (ESD) protection diode in a common anode configuration, encapsulated in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. The device is designed for ESD and transient overvoltage protection of up to two signal lines. N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. NPN Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. The PMBD6050 is a high-speed switching diode fabricated in planar technology, and encapsulated in a small SOT23 plastic SMD package. NPN medium power transistors in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. NPN Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. Epitaxial, medium-speed switching, double diode in a small SOT23 plastic SMD package. The diodes are in common cathode configuration. Low-power voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages. The diodes are available in the normalized E24 +- 2 pct. (BZX79-B) and approx. +- 5 pct. (BZX79-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V. NPN switching transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. Low-current voltage regulator diodes in a small SOT23 Surface-Mounted Device (SMD) plastic package. Low-current voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. P-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. NPN double transistor in a very small SOT363 (SC-88) plastic six lead package. General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD) plasic package. Low-power voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages. The diodes are available in the normalized E24 +- 2 pct. (BZX79-B) and approx. +- 5 pct. (BZX79-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V. NPN medium power transistors in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. Low-power general purpose voltage regulator diodes in a very small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. Medium-power voltage regulator diodes in small hermetically sealed leaded SOD66 (DO-41) glass packages. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. PNP transistor in a SOT323 plastic package. PNP medium power transistors in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. The 74AUP2GU04 is a dual unbuffered inverter. This device ensures very low static and dynamic power consumption across the entire VCCrange from 0.8 V to 3.6 V. General-purpose dual Schottky diode in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a very small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. PNP Darlington transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. Planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a SOD523 (SC-79) ultra small Surface-Mounted Device (SMD) plastic package. PNP general-purpose transistors in a small SOT23 (TO-236AB), Surface-Mounted Device (SMD) plastic package. PNP Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN/PNP Resistor-Equipped double Transistor (RET) family in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages. The diodes are available in the normalized E24 +- 2 pct. (BZX79-B) and approx. +- 5 pct. (BZX79-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V. Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Low-power voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages. The diodes are available in the normalized E24 +- 2 pct. (BZX79-B) and approx. +- 5 pct. (BZX79-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V. NPN general-purpose transistor encapsulated in a small SOT23 Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages. The diodes are available in the normalized E24 +- 2 pct. (BZX79-B) and approx. +- 5 pct. (BZX79-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V. PNP/PNP matched double transistor in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. ESD protection device in a small SOT323 Surface-Mounted Device (SMD) plastic package, designed to protect two automotive in-vehicle network bus lines from the damage caused by ElectroStatic Discharge (ESD) and other transients. Low-current voltage regulator diodes in a small SOT23 Surface-Mounted Device (SMD) plastic package. Low-current voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. PNP medium power transistors in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. Planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in an SOD123 small Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD) plastic package. General-purpose dual Schottky diode in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP/PNP matched double transistor in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes encapsulated in an ultra small SOD523 plastic SMD package. Low-power voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages. The diodes are available in the normalized E24 +- 2 pct. (BZX79-B) and approx. +- 5 pct. (BZX79-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V. The 74LVC1G06 is a single inverter with open-drain output. Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of these devices as translators in mixed 3.3 V and 5 V environments. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN medium power transistors in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. NPN/PNP Resistor-Equipped double Transistor (RET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes encapsulated in an ultra small SOD523 plastic SMD package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. PNP general-purpose transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. NPN transistor in a SOT323 plastic package. PNP transistor in a plastic SOT23 package. NPN medium power transistors in a SOT223 (SC-73) flat lead Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages. The diodes are available in the normalized E24 +- 2 pct. (BZX79-B) and approx. +- 5 pct. (BZX79-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V. The 74LVC1G07 is a single buffer with open-drain output. Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of these devices as translators in mixed 3.3 V and 5 V environments. Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise and fall times. This device is fully specified for partial power down applications using IOFF. The IOFFcircuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down. NPN high-voltage transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Unidirectional Transient Voltage Suppressor (TVS) in a very small leadless DSN1608-2 (SOD964) package. The 74AUP1G3208 is a single 3-input OR-AND gate. Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise and fall times. This device ensures very low static and dynamic power consumption across the entire VCCrange from 0.8 V to 3.6 V. This device is fully specified for partial power down applications using IOFF. The IOFFcircuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down. Three-terminal shunt regulator family with an output voltage range between Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection encapsulated in a small SOD323F (SC-90) Surface-Mounted Device (SMD) plastic package. Low-power general purpose voltage regulator diodes in a very small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. PNP/PNP general-purpose transistor pair in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. Low-current voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. NPN switching transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. Low voltage regulator diodes in hermetically sealed SOD66 (DO-41) packages. Low-power voltage regulator diodes encapsulated in an ultra small SOD523 plastic SMD package. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD) plastic package. NPN medium power transistors in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. PNP/PNP general-purpose double transistors in an SOT457 (SC-74) plastic package. High-voltage switching diode encapsulated in a small SOT23 Surface-Mounted Device (SMD) plastic package. Low-current voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. PNP medium power transistors in a medium power SOT223 (SC73) Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in small hermetically sealed glass SOD80C Surface-Mounted Device (SMD) packages. The diodes are available in the normalized E24 ±2 % (BZV55-B) and approximately ±5 % (BZV55-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 V to 75 V. Ultra low capacitance unidirectional double ElectroStatic Discharge (ESD) protection diode in a DFN1006-3 (SOT883) leadless ultra small Surface-Mounted Device (SMD) plastic package designed to protect up to two signal lines from the damage caused by ESD and other transients. Three-terminal shunt regulator family with an output voltage range between Vref= 1.24 V and 14 V, to be set by two external resistors. NPN/PNP double Resistor-Equipped Transistor (RET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. PNP low VCEsat(BISS) transistor in a SOT89 (SC-62) plastic package. NPN medium power transistor series in a small SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. General-purpose Schottky diode in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. NPN general-purpose transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. General-purpose Schottky diode in an ultra small SOD523 (SC-79) Surface-Mounted Device (SMD) flat lead plastic package. General-purpose Zener diodes in a SOD323F (SC-90) very small and flat lead Surface Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Low capacitance unidirectional fivefold ElectroStatic Discharge (ESD) protection diode array in a very small flat lead SOT666 Surface-Mounted Device (SMD) plastic package, designed to protect up to five unidirectional signal lines from the damage caused by ESD and other transients. NPN Resistor-Equipped Transistors (RET) family in Surface Mounted Device (SMD) plastic packages. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. NPN/NPN general-purpose double transistors in an SOT457 (SC-74) plastic package. NPN general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN/NPN general-purpose double transistors in a small SOT363 (SC-88) Surface Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. High-speed switching diode, encapsulated in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. Low-current voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. Planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a SOD523 (SC-79) ultra small Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes encapsulated in an ultra small SOD523 plastic SMD package. P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. NPN/NPN double Resistor-Equipped Transistor (RET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. PNP general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD)plastic package. Low-power voltage regulator diodes encapsulated in an ultra small SOD523 plastic SMD package. General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD) plastic package. Planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a SOD523 (SC-79) ultra small Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. PNP transistor in a SOT23 plastic package. NPN medium power transistors in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages. The diodes are available in the normalized E24 +- 2 pct. (BZX79-B) and approx. +- 5 pct. (BZX79-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V. Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD523 (SC-79) ultra small plastic SMD package. NPN Darlington transistor in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. This bidirectional ESD protection device is designed to protect high-speed interfaces such as SuperSpeed USB 3.2 at 10 Gbps, HDMI, DisplayPort, external Serial Advanced Technology Attachment (eSATA), Low Voltage Differential Signaling (LVDS), and Gigabit Multimedia Serial Link (GMSL) Serializer/Deserializer (SerDes) against ElectroStatic Discharge (ESD). Low voltage regulator diodes in hermetically sealed SOD66 (DO-41) packages. PNP general-purpose transistors in a small SOT23 (TO-236AB) or SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. NPN Resistor-Equipped Transistor (RET) family in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. High performance voltage regulator diodes in a small SOT23 (TO-236AB), Surface-Mounted Device (SMD) plastic package. This unidirectional ESD protection device is designed to protect high-speed interfaces such as SuperSpeed USB 3.2 at 10 Gbps, HDMI, DisplayPort, external Serial Advanced Technology Attachment (eSATA), Low Voltage Differential Signaling (LVDS), and Gigabit Multimedia Serial Link (GMSL) Serializer/Deserializer (SerDes) against ElectroStatic Discharge (ESD). The 74LVC1G19 is a 1-of-2 decoder/demultiplexer with a common output enable. This device buffers the data on input A and passes it to the outputs 1Y (true) and 2Y (complement) when the enable (E) input signal is LOW. A HIGHEcauses both outputs to assume a HIGH state. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. Unidirectional double ElectroStatic Discharge (ESD) protection diode in a common cathode configuration, encapsulated in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. The device is designed for ESD and transient overvoltage protection of up to two signal lines. Single high-speed switching diodes, fabricated in planar technology, and encapsulated in small hermetically sealed glass SOD80C Surface-Mounted Device (SMD) packages. Low-current voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. 300 Amp Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia’s unique "SchottkyPlus" technology delivers high efficiency, low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies. Low-power voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages. The diodes are available in the normalized E24 +- 2 pct. (BZX79-B) and approx. +- 5 pct. (BZX79-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V. PNP high-voltage low VCEsattransistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. Low-current voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. NPN general-purpose transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection encapsulated in small SOD123 Surface-Mounted Device (SMD) plastic package. NPN general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. This bidirectional ESD protection device is designed to protect high-speed interfaces such as SuperSpeed USB 3.2, HDMI, DisplayPort, external Serial Advanced Technology Attachment (eSATA), Low Voltage Differential Signaling (LVDS), and Gigabit Multimedia Serial Link (GMSL) Serializer/Deserializer (SerDes) against ElectroStatic Discharge (ESD). Low-current voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. Planar Schottky barrier diode in a SOD523 (SC-79) ultra small Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN small-signal Darlington transistor in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-4) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Low-current voltage regulator diodes in a small SOT23 Surface-Mounted Device (SMD) plastic package. General purpose diode fabricated in planar technology and encapsulated in a very small SOD323 (SC-76) plastic package. General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD) plastic package. NPN Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. NPN Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. General-purpose dual Schottky diode in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. The devices are ElectroStatic Discharge (ESD) protection devices for one, two or three differential channels. General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD) plastic package. NPN medium power transistor in a SOT223 Surface-Mounted Device (SMD) plastic package. PNP complement: BCP69. NPN/NPN Resistor-Equipped double Transistor (RET) family in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. Medium-power voltage regulator diodes in small hermetically sealed leaded SOD66 (DO-41) glass packages. High-voltage switching diode, encapsulated in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN/NPN low VCEsattransistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package. PNP general-purpose transistors in a small SOT23 (TO-236AB) or SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. Medium-power voltage regulator diodes in small hermetically sealed leaded SOD66 (DO-41) glass packages. High-speed switching diode, encapsulated in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Unidirectional ElectroStatic Discharge (ESD) protection diodes in a very small SOD323 Surface-Mounted Device (SMD) plastic package designed to protect one signal line from the damage caused by ESD and transient overvoltage. Low-power voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages. The diodes are available in the normalized E24 +- 2 pct. (BZX79-B) and approx. +- 5 pct. (BZX79-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. NPN general-purpose transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN single switching transistor in a SOT883 (SC-101) leadless ultra small Surface-Mounted Device (SMD) plastic package. Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection encapsulated in small SOD123 Surface-Mounted Device (SMD) plastic package. Medium-power voltage regulator diodes in small hermetically sealed leaded SOD66 (DO-41) glass packages. PNP transistor in a SOT23 plastic package. NPN complements: BCW31 and BCW32. Planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. Low-current voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. Low-current voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. The 74AUP1G132 is a single 2-input NAND gate with Schmitt-trigger inputs. Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise and fall times. This device ensures very low static and dynamic power consumption across the entire VCCrange from 0.8 V to 3.6 V. This device is fully specified for partial power down applications using IOFF. The IOFFcircuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down. Low-power voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages. The diodes are available in the normalized E24 +- 2 pct. (BZX79-B) and approx. +- 5 pct. (BZX79-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V. NPN medium power transistors in a medium power SOT223 (SC73) Surface-Mounted Device (SMD) plastic package. Planar Schottky barrier rectifier with an integrated guard ring for stress protection encapsulated in small SOD123 Surface-Mounted Device (SMD) plastic package. NPN/NPN Resistor-Equipped double Transistors (RET) family in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. Low voltage regulator diodes in hermetically sealed SOD66 (DO-41) packages. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. NPN transistor in a SOT23 plastic package. NPN Darlington transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP transistor in a plastic SOT23 package. NPN low VCEsattransistor in a SOT457 (SC-74) plastic package. NPN/NPN low VCEsattransistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 500 mA, 50 V NPN/NPN double Resistor-Equipped Transistor (RET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. NPN Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. NPN medium power transistors in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Medium-power voltage regulator diodes in small hermetically sealed leaded SOD66 (DO-41) glass packages. PNP Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages. The diodes are available in the normalized E24 +- 2 pct. (BZX79-B) and approx. +- 5 pct. (BZX79-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V. PNP high-voltage low VCEsattransistor in a SOT23 (TO-263AB) small Surface-Mounted Device (SMD) plastic package. NPN complement PBHV8115T-Q. Planar Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD523 (SC-79) ultra small and flat lead Surface-Mounted Device (SMD) plastic package. High-speed switching diode, encapsulated in small SOT23 Surface-Mounted Device (SMD) plastic package. Low-current voltage regulator diodes in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP general-purpose transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. NPN/NPN Resistor-Equipped Transistor (RET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. High-speed switching diode, encapsulated in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD) plastic package. NPN/PNP double Resistor-Equipped Transistor (RET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. PNP Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. The 74AUP1G34 is a single buffer. Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise and fall times. This device ensures very low static and dynamic power consumption across the entire VCCrange from 0.8 V to 3.6 V. This device is fully specified for partial power down applications using IOFF. The IOFFcircuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down. NPN low VCEsattransistor in a SOT89 plastic package. PNP Resistor-Equipped Transistor (RET) family in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Epitaxial medium-speed switching diode with a low leakage current in a hermetically-sealed glass SOD68 (DO-34) package. Three-terminal shunt regulator family with an output voltage range between Vref= 1.24 V and 14 V, to be set by two external resistors. Low-current voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. The 74AUP1G158 is a single 2-input inverting multiplexer. Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise and fall times. This device ensures very low static and dynamic power consumption across the entire VCCrange from 0.8 V to 3.6 V. This device is fully specified for partial power down applications using IOFF. The IOFFcircuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down. Bidirectional ElectroStatic Discharge (ESD) protection diode in a very small SOD323 (SC-76) SMD plastic package designed to protect one signal line from the damage caused by ESD and other transients. PNP power transistors in a power SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes encapsulated in an ultra small SOD523 plastic SMD package. Low-power general purpose voltage regulator diodes in a very small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. Low-power general purpose voltage regulator diodes in a very small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP general-purpose transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. Low-power general purpose voltage regulator diodes in a very small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. NPN/PNP general-purpose double transistor in a SOT363 (SC-88) very small Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. PNP general-purpose transistors in a very small SOT323 (SC-70), Surface-Mounted Device (SMD) plastic package. NPN/NPN general-purpose transistor pair in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN switching transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in an SOD882 (DFN1006-2) leadless ultra small Surface-Mounted Device (SMD) plastic package. Bidirectional ElectroStatic Discharge (ESD) protection diode in an ultra-small and flat lead SOD523 plastic package designed to protect one signal line from the damage caused by ESD and other transients. PNP medium power transistor in a SOT89 Surface-Mounted Device (SMD) plastic package. Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in an ultra small SOD523 (SC-79) Surface-Mounted Device (SMD) flat lead plastic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. Planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a very small SOD323 Surface-Mounted Device (SMD) plastic package. Planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a very small SOD323 Surface-Mounted Device (SMD) plastic package. Medium-power voltage regulator diodes in a SOT89 plastic SMD package. P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Low-power voltage regulator diodes encapsulated in an ultra small SOD523 plastic SMD package. NPN Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. The 74AUP1G373 is a single D-type transparent latch; 3-state. Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise and fall times. This device ensures very low static and dynamic power consumption across the entire VCCrange from 0.8 V to 3.6 V. This device is fully specified for partial power-down applications using IOFF. The IOFFcircuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down. PNP transistor in a SOT23 plastic package. NPN complements: BCW31 and BCW32. This bidirectional ESD protection device is designed to protect high-speed interfaces such as SuperSpeed USB 3.2, HDMI, DisplayPort, external Serial Advanced Technology Attachment (eSATA), Low Voltage Differential Signaling (LVDS), and Gigabit Multimedia Serial Link (GMSL) Serializer/Deserializer (SerDes) against ElectroStatic Discharge (ESD). This unidirectional ESD protection device is designed to protect high-speed interfaces such as SuperSpeed USB 3.2 at 10 Gbps, HDMI, DisplayPort, external Serial Advanced Technology Attachment (eSATA), Low Voltage Differential Signaling (LVDS), and Gigabit Multimedia Serial Link (GMSL) Serializer/Deserializer (SerDes) against ElectroStatic Discharge (ESD). NPN high-voltage transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD) plasic package. XC7SET125 is a high-speed Si-gate CMOS devices. It provides one non-inverting buffer/line driver with 3-state output. The 3-state output is controlled by the output enable input (OE). A HIGH atOEcauses the output to assume a high-impedance OFF-state. Planar Schottky barrier rectifier with an integrated guard ring for stress protection encapsulated in a small SOD123 Surface-Mounted Device (SMD) plastic package. Unidirectional double ElectroStatic Discharge (ESD) protection diode in a common anode configuration, encapsulated in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. The device is designed for ESD and transient overvoltage protection of up to two signal lines. Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD523 (SC-79) ultra small plastic SMD package. Low-power voltage regulator diodes in small hermetically sealed glass SOD80C Surface-Mounted Device (SMD) packages. The diodes are available in the normalized E24 ±2 % (BZV55-B) and approximately ±5 % (BZV55-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 V to 75 V. Planar Schottky barrier diode in a small SOT23 plastic SMD package. Three-terminal shunt regulator family with an output voltage range between Three-terminal shunt regulator family with an output voltage range between Vref= 1.24 V and 14 V, to be set by two external resistors. PNP Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP general-purpose double transistors in a small SOT143B Surface-Mounted Three-terminal shunt regulator family with an output voltage range between Vref= 1.24 V and 14 V, to be set by two external resistors. PNP general-purpose transistors in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. NPN/NPN resistor-equipped transistors (see ?Simplified outline, symbol and pinning? for package details). PNP/PNP general-purpose double transistor in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. Triple high-voltage switching diodes, encapsulated in a SOT457 (SC-74/TSOP6) small Surface-Mounted Device (SMD) plastic package. Low-current voltage regulator diodes in a small SOT23 Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages. The diodes are available in the normalized E24 +- 2 pct. (BZX79-B) and approx. +- 5 pct. (BZX79-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V. High-speed switching diode, encapsulated in a ultra small and flat lead SOD523 (SC-79) Surface-Mounted Device (SMD) plastic package. Ultra low capacitance unidirectional ElectroStatic Discharge (ESD) protection diode in a SOD523 (SC-79) ultra small and flat lead Surface-Mounted Device (SMD) plastic package designed to protect one signal line from the damage caused by ESD and other transients. Low-power voltage regulator diodes in small hermetically sealed glass SOD80C Surface-Mounted Device (SMD) packages. The diodes are available in the normalized E24 ±2 % (BZV55-B) and approximately ±5 % (BZV55-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 V to 75 V. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD) plastic package. Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in DFN1006-2 (SOD882) leadless ultra small Surface-Mounted Device (SMD) plastic package. Low-current voltage regulator diodes in a small SOT23 Surface-Mounted Device (SMD) plastic package. High-speed switching diode, encapsulated in a very small and flat lead SOD323F Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD) plasic package. The 74LVC1G08 is a single 2-input AND gate. Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of these devices as translators in mixed 3.3 V and 5 V applications. High-speed switching diode, fabricated in planar technology, and encapsulated in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD) plastic package. NPN medium power transistors in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. PNP high-voltage low VCEsattransistor in a SOT23 (TO-263AB) small Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages. The diodes are available in the normalized E24 +- 2 pct. (BZX79-B) and approx. +- 5 pct. (BZX79-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V. PNP general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Three-terminal shunt regulator family with an output voltage range between Vref= 1.24 V and 14 V, to be set by two external resistors. Monolithic transient voltage suppressor diode in a six lead SOT457 (SC-74) package for 4-bit wide ESD transient suppression at 5.6 V level. General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD) plastic package. PNP switching transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. The 74AUP1G11 is a single 3-input AND gate. Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise and fall times. This device ensures very low static and dynamic power consumption across the entire VCCrange from 0.8 V to 3.6 V. This device is fully specified for partial power down applications using IOFF. The IOFFcircuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down. The 74AUP1G386 is a single 3-input EXCLUSIVE-OR gate. Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise and fall times. This device ensures very low static and dynamic power consumption across the entire VCCrange from 0.8 V to 3.6 V. This device is fully specified for partial power down applications using IOFF. The IOFFcircuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down. Low-power voltage regulator diodes encapsulated in an ultra small SOD523 plastic SMD package. Transient voltage suppressor in a DFN1610-2 (SOD1610-1) ultra small and leadless Surface-Mounted Device (SMD) package designed to protect one line against high surge currents and other transients. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. PNP low VCEsattransistor in a SOT89 plastic package. Planar Schottky barrier diode with an integrated guard ring for stress protection, in a very small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. Dual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. Low voltage regulator diodes in hermetically sealed SOD66 (DO-41) packages. PNP high-voltage low VCEsattransistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. NPN Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD) plastic package. Medium-power voltage regulator diodes in small hermetically sealed leaded SOD66 (DO-41) glass packages. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. NPN general-purpose transistors in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP general-purpose transistors in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP power transistors in a power SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. Planar Schottky barrier rectifier with an integrated guard ring for stress protection encapsulated in small SOD123 Surface-Mounted Device (SMD) plastic package. NPN general-purpose double transistors in a small SOT143B Surface-Mounted Device (SMD) plastic package. The 74AVC4T774 is a 4-bit, dual supply transceiver that enables bidirectional level translation. It features eight 1-bit input-output ports (An and Bn), four direction control inputs (DIR1, DIR2, DIR3 and DIR4), an output enable input (OE) and dual supply pins (VCC(A)and VCC(B)). Both VCC(A)and VCC(B)can be supplied at any voltage between 0.8 V and 3.6 V making the device suitable for translating between any of the low voltage nodes (0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V and 3.3 V). Pins An,OEand DIRn are referenced to VCC(A)and pins Bn are referenced to VCC(B). A HIGH on DIRn allows transmission from An to Bn and a LOW on DIRn allows transmission from Bn to An. The output enable input (OE) can be used to disable the outputs so the buses are effectively isolated. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes encapsulated in an ultra small SOD523 plastic SMD package. 400 W unidirectional Transient Voltage Suppressor (TVS) in a SOD123W small and flat lead low-profile Surface-Mounted Device (SMD) plastic package, designed for transient overvoltage protection. General-purpose Zener diodes in a SOD323F (SC-90) very small and flat lead Surface-Mounted Device (SMD) plastic package. The 74LVC1G27 provides one 3-input NOR function. The 74LVC1G80 is a single positive-edge triggered D-type flip-flop. Data at the D-input that meets the set-up and hold time requirements on the LOW-to-HIGH clock transition will be stored in the flip-flop and its complement will appear at theQoutput. Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of these devices as translators in mixed 3.3 V and 5 V environments. PNP general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. Planar Schottky barrier rectifier with an integrated guard ring for stress protection encapsulated in small SOD123 Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages. The diodes are available in the normalized E24 +- 2 pct. (BZX79-B) and approx. +- 5 pct. (BZX79-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V. NPN transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. 400 W unidirectional Transient Voltage Suppressor (TVS) in a SOD123W small and flat lead low-profile Surface-Mounted Device (SMD) plastic package, designed for transient overvoltage protection. Medium-power voltage regulator diodes in small hermetically sealed leaded SOD66 (DO-41) glass packages. Low-power voltage regulator diodes in small hermetically sealed glass SOD80C Surface-Mounted Device (SMD) packages. The diodes are available in the normalized E24 ±2 % (BZV55-B) and approximately ±5 % (BZV55-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 V to 75 V. Ultra low capacitance double rail-to-rail ElectroStatic Discharge (ESD) protection diode in a small SOT143B Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages. The diodes are available in the normalized E24 +- 2 pct. (BZX79-B) and approx. +- 5 pct. (BZX79-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD) plastic package. The 74AHC1G125/74AHCT1G125 is a single buffer/line driver with 3-state output. Inputs are overvoltage tolerant. This feature allows the use of these devices as translators in mixed voltage environments. PNP medium power transistor in a SOT89 Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD) plastic package. NPN/PNP double Resistor-Equipped Transistor (RET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. This bidirectional ESD protection device is designed to protect high-speed interfaces such as SuperSpeed USB 3.2 at 10 Gbps, HDMI, DisplayPort, external Serial Advanced Technology Attachment (eSATA), Low Voltage Differential Signaling (LVDS), and Gigabit Multimedia Serial Link (GMSL) Serializer/Deserializer (SerDes) against ElectroStatic Discharge (ESD). Low-current voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. NPN general-purpose transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN/NPN Resistor-Equipped double Transistor (RET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. General-purpose Schottky diode in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. The 74AHC1G04; 74AHCT1G04 is a single inverter. Inputs are overvoltage tolerant. This feature allows the use of these devices as translators in mixed voltage environments. NPN Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP/PNP matched double transistor in a very small Surface-Mounted Device (SMD) SOT363 (SC-88) plastic package. The transistors are fully isolated internally. NPN/PNP general-purpose transistor pair in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. Low voltage regulator diodes in hermetically sealed SOD66 (DO-41) packages. Medium-power voltage regulator diodes in small hermetically sealed leaded SOD66 (DO-41) glass packages. Low-current voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. Low-power general purpose voltage regulator diodes in a very small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. High-speed switching diode, encapsulated in an SOD123 small Surface-Mounted Device (SMD) plastic package. NPN high-voltage transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. Medium-power voltage regulator diodes in small hermetically sealed leaded SOD66 (DO-41) glass packages. PNP Resistor-Equipped Transistor (RET) family in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in small hermetically sealed glass SOD80C Surface-Mounted Device (SMD) packages. The diodes are available in the normalized E24 ±2 % (BZV55-B) and approximately ±5 % (BZV55-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 V to 75 V. High-speed switching diode, encapsulated in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages. The diodes are available in the normalized E24 +- 2 pct. (BZX79-B) and approx. +- 5 pct. (BZX79-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V. NPN low VCEsattransistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. The 74LVC1G17 is a single buffer Schmitt-trigger. Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of these devices as translators in mixed 3.3 V and 5 V environments. This device is fully specified for partial power down applications using IOFF. The IOFFcircuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down. Low-power voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages. The diodes are available in the normalized E24 +- 2 pct. (BZX79-B) and approx. +- 5 pct. (BZX79-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages. The diodes are available in the normalized E24 +- 2 pct. (BZX79-B) and approx. +- 5 pct. (BZX79-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V. Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a very small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. NPN general-purpose transistor encapsulated in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Epitaxial, medium-speed switching diode with a low-leakage current encapsulated in a small SOD323 SMD plastic package. NPN general-purpose transistor in a very small SOT323 (SC70) Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD) plastic package. PNP low VCesattransistor in a SOT323 (SC-70) plastic package. The 74LVC1G14 is a single inverter with Schmitt-trigger inputs. Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of these devices as translators in mixed 3.3 V and 5 V environments. This device is fully specified for partial power down applications using IOFF. The IOFFcircuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down. High-voltage switching diode, encapsulated in an ultra small SOD523 (SC-79) flat lead Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. 240 Amp, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications. High-voltage switching diode, encapsulated in an SOD123 small Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages. The diodes are available in the normalized E24 +- 2 pct. (BZX79-B) and approx. +- 5 pct. (BZX79-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V. Low-current voltage regulator diodes in a small SOT23 Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages. The diodes are available in the normalized E24 +- 2 pct. (BZX79-B) and approx. +- 5 pct. (BZX79-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V. Low voltage regulator diodes in hermetically sealed SOD66 (DO-41) packages. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP low VCEsatBreakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. Low-current voltage regulator diodes in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN general-purpose transistor in a very small SOT323 (SC70) Surface-Mounted Device (SMD) plastic package. NPN general-purpose transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. Low-power general purpose voltage regulator diodes in a very small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. NPN Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN general-purpose transistor in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Epitaxial, medium-speed switching, double diode in a small SOT23 plastic SMD package. The diodes are in common anode configuration. Low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode in a ultra-small and flat lead SOD523 plastic package designed to protect one signal line from the damage caused by ESD and other transients. The 74AUP1T57 is a configurable multiple function gate with level translating, Schmitt-trigger inputs. The device can be configured as any of the following logic functions AND, OR, NAND, NOR, XNOR, inverter and buffer; using the 3-bit input. All inputs can be connected directly to VCCor GND. Low threshold Schmitt trigger inputs allow these devices to be driven by 1.8 V logic levels in 3.3 V applications. The 74AUP2G07 is a dual buffer with open-drain outputs. Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise and fall times. This device ensures very low static and dynamic power consumption across the entire VCCrange from 0.8 V to 3.6 V. This device is fully specified for partial power down applications using IOFF. The IOFFcircuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down. NPN general-purpose transistors in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN/PNP low VCEsatdouble transistor in a SOT666 ultra small and flat lead Surface-Mounted Device (SMD)plastic package. PNP medium power transistors in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. NPN general-purpose transistor in a very small SOT323 (SC70) Surface-Mounted Device (SMD) plastic package. Planar Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in an ultra small SOD523 (SC-79) Surface-Mounted Device (SMD) flat lead plastic package. The 74AUP2G17 is a dual buffer with Schmitt-trigger inputs. This device ensures very low static and dynamic power consumption across the entire VCCrange from 0.8 V to 3.6 V. This device is fully specified for partial power down applications using IOFF. The IOFFcircuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down. General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD) plastic package. Unidirectional ElectroStatic Discharge (ESD) protection diode in a SOD523 plastic package designed to protect one transmission or data line from the damage caused by ESD and other transients. PNP medium power transistors in a SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP medium power transistors in a SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. ESD protection device in a small SOT323 Surface-Mounted Device (SMD) plastic package, designed to protect two automotive in-vehicle network bus lines from the damage caused by ElectroStatic Discharge (ESD) and other transients. NPN general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN general-purpose transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD) plastic package. Low-power general purpose voltage regulator diodes in a very small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. PNP Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN/PNP Resistor-Equipped double Transistor (RET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package. The 74AHC1G126; 74AHCT1G126 is a single buffer/line driver with 3-state output. Inputs are overvoltage tolerant. This feature allows the use of these devices as translators in mixed voltage environments. General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD) plasic package. General-purpose dual Schottky diode in a small SOT23 Surface-Mounted Device (SMD) plastic package. Medium-power voltage regulator diodes in small hermetically sealed leaded SOD66 (DO-41) glass packages. This unidirectional ESD protection device is designed to protect high-speed interfaces such as SuperSpeed USB 3.2, HDMI, DisplayPort, external Serial Advanced Technology Attachment (eSATA), Low Voltage Differential Signaling (LVDS), and Gigabit Multimedia Serial Link (GMSL) Serializer/Deserializer (SerDes) against ElectroStatic Discharge (ESD). Unidirectional double ESD protection diode in common cathode configuration in a small SOT23 Surface-Mounted Device (SMD) plastic package, designed to protect up to two data lines against damage from ElectroStatic Discharge (ESD) and other transients. Low-power voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. Low-current voltage regulator diodes in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP switching transistor in a SOT23 small Surface-Mounted Device (SMD) plastic package. High-voltage switching diode, encapsulated in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in small hermetically sealed glass SOD80C Surface-Mounted Device (SMD) packages. The diodes are available in the normalized E24 ±2 % (BZV55-B) and approximately ±5 % (BZV55-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 V to 75 V. 300 Amp Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia’s unique "SchottkyPlus" technology delivers high efficiency, low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies. The 74AUP1G332 is a single 3-input OR gate. Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise and fall times. This device ensures very low static and dynamic power consumption across the entire VCCrange from 0.8 V to 3.6 V. This device is fully specified for partial power down applications using IOFF. The IOFFcircuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down. General-purpose Zener diodes in an SOD123 small and flat lead Surface-Mounted Device (SMD) plastic package. PNP general-purpose transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN general-purpose transistor in a very small SOT323 (SC70) Surface-Mounted Device (SMD) plastic package. Low-current voltage regulator diodes in a small SOT23 Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD) plastic package. NPN/NPN Resistor-Equipped double Transistors (RET) family in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. PNP general-purpose transistors in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. Low-current voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. NPN Resistor-Equipped Transistors (RET) family. PNP medium power transistors in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD) plasic package. PNP transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. PNP/PNP double Resistor-Equipped Transistor (RET) in a very SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. Common-mode ElectroMagnetic Interference (EMI) filters with integrated ElectroStatic Discharge (ESD) protection for one, two and three differential channels. The devices are designed to provide low insertion loss for differential high-speed signals on each channel while unwanted common-mode signals are attenuated. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD323 (SC-76) very small Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in small hermetically sealed glass SOD80C Surface-Mounted Device (SMD) packages. The diodes are available in the normalized E24 ±2 % (BZV55-B) and approximately ±5 % (BZV55-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 V to 75 V. NPN low VCEsattransistor in a small SOT23 plastic package. PNP complement: PBSS5160T. General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes encapsulated in an ultra small SOD523 plastic SMD package. Low-power voltage regulator diodes encapsulated in an ultra small SOD523 plastic SMD package. PNP Resistor-Equipped Transistor (RET) family in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP general-purpose transistors in a very small SOT323 (SC-70), Surface-Mounted Device (SMD) plastic package. Planar Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD523 (SC-79) ultra small and flat lead Surface-Mounted Device (SMD) plastic package. Low-current voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. High-voltage switching diode encapsulated in a small SOT23 Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD) plasic package. Low-power voltage regulator diodes encapsulated in an ultra small SOD523 plastic SMD package. Low-power general purpose voltage regulator diodes in a very small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. NPN/NPN double Resistor-Equipped Transistor (RET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package. NPN transistor in a SOT323 plastic package. The 74AUP1G17 is a single buffer with Schmitt-trigger input. This device ensures very low static and dynamic power consumption across the entire VCCrange from 0.8 V to 3.6 V. This device is fully specified for partial power down applications using IOFF. The IOFFcircuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down. PNP high-voltage low VCEsattransistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. NPN general-purpose transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN medium power transistors in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD) plastic package. N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. NPN/PNP Resistor-Equipped double Transistor (RET) family in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. PNP/PNP general-purpose double transistor in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Planar Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. Low-power voltage regulator diodes encapsulated in an ultra small SOD523 plastic SMD package. The 74AUP1G80 is a single positive-edge triggered D-type flip-flop. Data at the D-input that meets the set-up and hold time requirements on the LOW-to-HIGH clock transition will be stored in the flip-flop and its complement will appear at theQoutput. Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise and fall times. This device ensures very low static and dynamic power consumption across the entire VCCrange from 0.8 V to 3.6 V. This device is fully specified for partial power down applications using IOFF. The IOFFcircuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down. Three-terminal shunt regulator family with an output voltage range between Vref= 1.24 V and 14 V, to be set by two external resistors. Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection encapsulated in a small SOD323F (SC-90) Surface-Mounted Device (SMD) plastic package. The 74LVC2G07 is a dual buffer with open-drain outputs. Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of these devices as translators in mixed 3.3 V and 5 V environments. Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise and fall times. This device is fully specified for partial power down applications using IOFF. The IOFFcircuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down. NPN general-purpose transistors in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes encapsulated in an ultra small SOD523 plastic SMD package. NPN general-purpose transistors in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. General-purpose Schottky diode in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. Low-current voltage regulator diodes in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP medium power transistors in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. Low-current voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in small hermetically sealed glass SOD80C Surface-Mounted Device (SMD) packages. The diodes are available in the normalized E24 ±2 % (BZV55-B) and approximately ±5 % (BZV55-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 V to 75 V. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. PNP low VCEsattransistor in a SOT223 plastic package. Planar Schottky barrier rectifier with an integrated guard ring for stress protection encapsulated in small SOD123 Surface-Mounted Device (SMD) plastic package. Planar Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD323 (SC-76) very small SMD plastic package. NPN general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages. The diodes are available in the normalized E24 +- 2 pct. (BZX79-B) and approx. +- 5 pct. (BZX79-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V. NPN medium frequency transistor in a SOT23 plastic package. NPN/NPN matched double transistors in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. The 74LVC1G3157 is a single-pole double-throw analog switch with a digital select input (S), two independent inputs/outputs (Y0 and Y1) and a common input/output (Z). Control inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of these devices as translators in mixed 3.3 V and 5 V environments. Three-terminal shunt regulator family with an output voltage range between Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD) plastic package. PNP/PNP matched double transistors in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. Planar Schottky barrier dual diode with an integrated guard ring for stress protection, encapsulated in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. NPN/NPN Resistor-Equipped double Transistor (RET) family in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. The 74LVC2G06 is a dual inverter with open-drain outputs. Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of these devices as translators in mixed 3.3 V and 5 V environments. Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise and fall times. This device is fully specified for partial power down applications using IOFF. The IOFFcircuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in small hermetically sealed glass SOD80C Surface-Mounted Device (SMD) packages. The diodes are available in the normalized E24 ±2 % (BZV55-B) and approximately ±5 % (BZV55-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 V to 75 V. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN Resistor-Equipped Transistor (RET) in a small SOT23 (SC-101) Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages. The diodes are available in the normalized E24 +- 2 pct. (BZX79-B) and approx. +- 5 pct. (BZX79-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V. PNP/PNP double Resistor-Equipped Transistor (RET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. Three-terminal shunt regulator family with an output voltage range between Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. The 74AUP1G57 is a configurable multiple function gate with Schmitt-trigger inputs. The device can be configured as any of the following logic functions AND, OR, NAND, NOR, XNOR, inverter and buffer; using the 3-bit input. All inputs can be connected directly to VCCor GND. This device ensures very low static and dynamic power consumption across the entire VCCrange from 0.8 V to 3.6 V. This device is fully specified for partial power down applications using IOFF. The IOFFcircuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down. PNP/PNP Resistor-Equipped double Transistor (RET) family in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Medium-power voltage regulator diodes in small hermetically sealed leaded SOD66 (DO-41) glass packages. NPN Resistor-Equipped Transistor (RET) family in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-2) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. XC7SH125 is a high-speed Si-gate CMOS device. It provides one non-inverting buffer/line driver with 3-state output. The 3-state output is controlled by the output enable input (OE). A HIGH atOEcauses the output to assume a high-impedance OFF-state. General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD) plastic package. Medium-power voltage regulator diodes in small hermetically sealed leaded SOD66 (DO-41) glass packages. Low voltage regulator diodes in hermetically sealed SOD66 (DO-41) packages. NPN medium power transistors in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. PNP transistor in a SOT323 plastic package. Low-power voltage regulator diodes encapsulated in an ultra small SOD523 plastic SMD package. PNP general-purpose transistors in a very small SOT323 (SC-70), Surface-Mounted Device (SMD) plastic package. NPN Resistor-Equipped Transistor (RET) family in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. Bidirectional ElectroStatic Discharge (ESD) protection diode in very small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package designed to protect one signal line from the damage caused by ESD and other transients. General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD) plasic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. Bidirectional ElectroStatic Discharge (ESD) protection diode in a very small SOD323 (SC-76) SMD plastic package designed to protect one signal line from the damage caused by ESD and other transients. NPN Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. The 74AHC1G126; 74AHCT1G126 is a single buffer/line driver with 3-state output. Inputs are overvoltage tolerant. This feature allows the use of these devices as translators in mixed voltage environments. NPN general-purpose transistor in a very small SOT323 (SC70) Surface-Mounted Device (SMD) plastic package. Low-power general purpose voltage regulator diodes in a very small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. Planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a SOD523 (SC-79) ultra small Surface-Mounted Device (SMD) plastic package. Epitaxial medium-speed switching diode with a low leakage current in an ultra small SOD523 (SC-79) SMD plastic package. PNP general-purpose transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. High-speed switching double diode, encapsulated in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. Low-power general purpose voltage regulator diodes in a very small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. Dual Planar Schottky barrier diode in series configuration with an integrated guard ring for stress protection, encapsulated in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP general-purpose transistors in a small SOT23 (TO-236AB), Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD) plasic package. Single high-speed switching diode, encapsulated in a SOD323F (SC-90) very small and flat lead Surface-Mounted Device (SMD) plastic package. Very low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode in an SOD882 leadless ultra-small Surface-Mounted Device (SMD) plastic package, designed to protect one signal line from the damage caused by ESD and other transients. NPN switching transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. The 74LVC1G58 is a configurable multiple function gate with Schmitt-trigger inputs. The device can be configured as any of the following logic functions AND, OR, NAND, NOR, XOR, inverter and buffer; using the 3-bit input. All inputs can be connected diectly to VCCor GND. Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of these devices as translators in mixed 3.3 V and 5 V environments. NPN/PNP double Resistor-Equipped Transistor (RET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. PNP/PNP double Resistor-Equipped Transistors (RET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. Low voltage regulator diodes in hermetically sealed SOD66 (DO-41) packages. P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Medium-power voltage regulator diodes in SOT223 plastic SMD packages. Low-power voltage regulator diodes in small hermetically sealed glass SOD80C Surface-Mounted Device (SMD) packages. The diodes are available in the normalized E24 ±2 % (BZV55-B) and approximately ±5 % (BZV55-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 V to 75 V. N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Low-power general purpose voltage regulator diodes in a very small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. PNP low VCEsattransistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN power transistors in a power SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN transistor in a SOT23 plastic package. NPN/PNP Resistor-Equipped double Transistor (RET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. NPN general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP general-purpose transistors in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. General-purpose dual Schottky diode in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP switching transistor in a SOT223 plastic package. PNP transistor in a SOT323 plastic package. Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection encapsulated in small SOD123 Surface-Mounted Device (SMD) plastic package. Planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a hermetically-sealed subminiature SOD68 (DO-34) package. The diode is suitable for mounting on a 2 E (5.08 mm) pitch. General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD) plasic package. P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD) plastic package. P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. NPN low VCEsattransistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOD323 (SC-76) very small Surface-Mounted Device (SMD) plastic package. NPN transistor in a SOT23 plastic package. Low-power voltage regulator diodes in small hermetically sealed glass SOD80C Surface-Mounted Device (SMD) packages. The diodes are available in the normalized E24 ±2 % (BZV55-B) and approximately ±5 % (BZV55-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 V to 75 V. PNP low VCEsatBreakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes encapsulated in an ultra small SOD523 plastic SMD package. Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia’s unique "SchottkyPlus" technology delivers high efficiency, low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies. Low-power voltage regulator diodes in small hermetically sealed glass SOD80C Surface-Mounted Device (SMD) packages. The diodes are available in the normalized E24 ±2 % (BZV55-B) and approximately ±5 % (BZV55-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 V to 75 V. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Low-current voltage regulator diodes in a small SOT23 Surface-Mounted Device (SMD) plastic package. Planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. NPN/NPN general-purpose transistor pair in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. PNP Resistor-Equipped Transistor (RET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP general-purpose transistors in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. High-speed switching diode, encapsulated in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN medium power transistors in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. NPN low VCEsattransistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. PNP Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes encapsulated in an ultra small SOD523 plastic SMD package. Low-power voltage regulator diodes encapsulated in an ultra small SOD523 plastic SMD package. Low-power voltage regulator diodes encapsulated in an ultra small SOD523 plastic SMD package. Low-current voltage regulator diodes in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP low VCEsatBreakthrough in Smal Signal (BISS) transitor in a medium power SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. Low capacitance unidirectional ElectroStatic Discharge (ESD) protection diode in a SOD523 (SC-79) ultra small and flat lead Surface-Mounted Device (SMD) plastic package, designed to protect one signal line from the damage caused by ESD and other transients. The 74AUP1T58 is a configurable multiple function gate with level translating, Schmitt-trigger inputs. The device can be configured as any of the following logic functions AND, OR, NAND, NOR, XOR, inverter and buffer; using the 3-bit input. All inputs can be connected directly to VCCor GND. Low threshold Schmitt trigger inputs allow these devices to be driven by 1.8 V logic levels in 3.3 V applications. NPN low VCEsattransistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN general-purpose transistors in a small SOT23 (TO236AB) Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. PNP general-purpose transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN medium power transistors in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Low-current voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages. The diodes are available in the normalized E24 +- 2 pct. (BZX79-B) and approx. +- 5 pct. (BZX79-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V. NPN Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. 280 Amp, logic level gate drive N-channel enhancement mode MOSFET in 150 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications. High-voltage switching diode encapsulated in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN medium power transistors in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package NPN high-voltage transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. 160 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications. Low-power general purpose voltage regulator diodes in a very small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. NPN general-purpose transistors in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. Ultra low capacitance double rail-to-rail ElectroStatic Discharge (ESD) protection diode in a small SOT457 Surface-Mounted Device (SMD) plastic package. The device is designed to protect two high-speed data lines or high-frequency signal lines from the damage caused by ESD and other transients. The device integrates two ultra low capacitance rail-to-rail diodes and one additional ESD protection diode to ensure signal line protection even if no supply voltage is available. NPN/PNP general-purpose double transistor in a SOT363 (SC-88) very small Surface-Mounted Device (SMD) plastic package. Very low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode in an SOD882 leadless ultra-small Surface-Mounted Device (SMD) plastic package, designed to protect one signal line from the damage caused by ESD and other transients. NPN/NPN Resistor-Equipped double Transistor (RET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Low-current voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. PNP low VCEsattransistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. NPN Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. NPN general-purpose transistors in a small SOT23 (TO236AB) Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. Planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a very small and flat lead SOD323F (SC-90) Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. Schottky barrier quadruple diode with an integrated guard ring for stress protection. Two electrically isolated dual Schottky barrier diodes series, encapsulated in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD) plastic package. NPN general-purpose transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN Resistor-Equipped Transistor (RET) family in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD) plastic package. The 74AUP1G125 is a single buffer/line driver with 3-state output. Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise and fall times. This device ensures very low static and dynamic power consumption across the entire VCCrange from 0.8 V to 3.6 V. PNP general-purpose transistors in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. PNP transistor in a SOT23 plastic package. Low-power voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages. The diodes are available in the normalized E24 +- 2 pct. (BZX79-B) and approx. +- 5 pct. (BZX79-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V. NPN transistor in an SC-70; SOT323 plastic package. General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. PNP Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP low VCEsattransistor in a SOT89 plastic package. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Low-power general purpose voltage regulator diodes in a very small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. Unidirectional double ElectroStatic Discharge (ESD) protection diodes in a common anode configuration, encapsulated in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. The device is designed for ESD and transient overvoltage protection of up to two signal lines. General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD) plastic package. N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-2) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. PNP medium power transistors in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. NPN high-voltage transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in small hermetically sealed glass SOD80C Surface-Mounted Device (SMD) packages. The diodes are available in the normalized E24 ±2 % (BZV55-B) and approximately ±5 % (BZV55-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 V to 75 V. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. Planar Schottky barrier dual diode with an integrated guard ring for stress protection, encapsulated in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. The 74AUP1G240 is a 1-bit inverting buffer/line driver with 3-state outputs. The device features an output enable (OE). A HIGH onOEcauses the output to assume a high-impedance OFF-state. Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise and fall times. This device ensures very low static and dynamic power consumption across the entire VCCrange from 0.8 V to 3.6 V. This device is fully specified for partial power down applications using IOFF. The IOFFcircuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. The 74AUP2G34 is a dual buffer. Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise and fall times. This device ensures very low static and dynamic power consumption across the entire VCCrange from 0.8 V to 3.6 V. This device is fully specified for partial power down applications using IOFF. The IOFFcircuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down. General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD) plasic package. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. NPN/PNP Resistor-Equipped double Transistor (RET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. This bidirectional ESD protection device is designed to protect high-speed interfaces such as SuperSpeed USB 3.2 at 10 Gbps, HDMI, DisplayPort, external Serial Advanced Technology Attachment (eSATA), Low Voltage Differential Signaling (LVDS), and Gigabit Multimedia Serial Link (GMSL) Serializer/Deserializer (SerDes) against ElectroStatic Discharge (ESD). High-voltage switching diode in a very small SOD323F (SC-90) flat lead Surface-Mounted Device (SMD) plastic package. PNP medium power transistors in a SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN/NPN matched double transistor in a SOT666 ultra small Surface-Mounted Device (SMD) plastic package. The transistors are fully isolated internally. Low-power voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages. The diodes are available in the normalized E24 +- 2 pct. (BZX79-B) and approx. +- 5 pct. (BZX79-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V. Low-power general purpose voltage regulator diodes in a very small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 portfolio utilising Nexperia’s unique "SchottkyPlus" technology delivers high efficiency, low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies. Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia's unique "SchottkyPlus" technology delivers high efficiency, low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies. The 74LVC1G04 is a single inverter. Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of these devices as translators in mixed 3.3 V and 5 V environments. Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise and fall times. This device is fully specified for partial power down applications using IOFF. The IOFFcircuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down. PNP/PNP general-purpose transistor pair in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP low VCEsattransistor in a SOT223 plastic package. PNP/PNP Resistor-Equipped double Transistor (RET) family in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages. The diodes are available in the normalized E24 +- 2 pct. (BZX79-B) and approx. +- 5 pct. (BZX79-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V. Low-power voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages. The diodes are available in the normalized E24 +- 2 pct. (BZX79-B) and approx. +- 5 pct. (BZX79-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V. NPN/NPN Resistor-Equipped double Transistor (RET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. Low-power general purpose voltage regulator diodes in a very small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. PNP general-purpose transistors in a small SOT23 (TO-236AB), Surface-Mounted Device (SMD) plastic package. PNP/PNP double Resistor-Equipped Transistor (RET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN transistor in a SOT23 plastic package. General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD) plastic package. Low-current voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD) plastic package. Planar Schottky barrier rectifier with an integrated guard ring for stress protection encapsulated in small SOD123 Surface-Mounted Device (SMD) plastic package. Low-current voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. The 74AUP1Z125 is a crystal driver with enable, internal resistor and 3-state output. When not in use theENinput can be driven HIGH, putting the device in a low power disable mode with X1 pulled HIGH via RPU, X2 set LOW and Y in the high impedance OFF-state. In disable mode the output Y assumes the high impedance OFF-state. Schmitt trigger action on theENinput makes the circuit tolerant to slower input rise and fall times across the entire VCCrange from 0.8 V to 3.6 V. Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise and fall times. Medium-power voltage regulator diodes in small hermetically sealed leaded SOD66 (DO-41) glass packages. Low-power voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages. The diodes are available in the normalized E24 +- 2 pct. (BZX79-B) and approx. +- 5 pct. (BZX79-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V. General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD) plastic package. Bidirectional ElectroStatic Discharge (ESD) protection diode in a very small SOD323 (SC-76) SMD plastic package designed to protect one signal line from the damage caused by ESD and other transients. NPN power transistors in a power SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. PNP/PNP general-purpose transistor pair in a very small Surface-Mounted Device (SMD) plastic package. NPN low VCEsattransistor in a SOT323 plastic package. Low-power voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages. The diodes are available in the normalized E24 +- 2 pct. (BZX79-B) and approx. +- 5 pct. (BZX79-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V. NPN/PNP double Resistor-Equipped Transistors (RET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. PNP medium power transistors in a SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. PNP medium power transistors in a SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. NPN high-voltage transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. PNP Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. The 74LVC2G17 is a dual buffer with Schmitt-trigger inputs. Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of these devices as translators in mixed 3.3 V and 5 V environments. Planar Schottky barrier diodes with an integrated guard ring for stress protection, encapsulated in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP Resistor-Equipped Transistor (RET) family in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Triple high-voltage switching diodes, encapsulated in a SOT457 (SC-74/TSOP6) small Surface-Mounted Device (SMD) plastic package. PNP medium frequency transistor in a SOT23 plastic package. NPN/PNP double Resistor-Equipped Transistor (RET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package. PNP medium power transistor in a SOT89 Surface-Mounted Device (SMD) plastic package. NPN complement: BC868. Low-power voltage regulator diodes encapsulated in an ultra small SOD523 plastic SMD package. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Low-current voltage regulator diodes in a small SOT23 Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in small hermetically sealed glass SOD80C Surface-Mounted Device (SMD) packages. The diodes are available in the normalized E24 ±2 % (BZV55-B) and approximately ±5 % (BZV55-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 V to 75 V. Low-power voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages. The diodes are available in the normalized E24 +- 2 pct. (BZX79-B) and approx. +- 5 pct. (BZX79-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V. Low-power voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages. The diodes are available in the normalized E24 +- 2 pct. (BZX79-B) and approx. +- 5 pct. (BZX79-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V. PNP general-purpose transistors in a small SOT23 (TO-236AB) or SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. High-speed switching diode, encapsulated in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Low-power general purpose voltage regulator diodes in a very small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. NPN Resistor-Equipped Transistor (RET) family in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes encapsulated in an ultra small SOD523 plastic SMD package. Low-power voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in small hermetically sealed glass SOD80C Surface-Mounted Device (SMD) packages. The diodes are available in the normalized E24 ±2 % (BZV55-B) and approximately ±5 % (BZV55-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 V to 75 V. NPN Resistor-Equipped Transistor (RET) family in Surface-Mounted Device (SMD) plastic packages. Low-power voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages. The diodes are available in the normalized E24 +- 2 pct. (BZX79-B) and approx. +- 5 pct. (BZX79-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V. Low-power voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages. The diodes are available in the normalized E24 +- 2 pct. (BZX79-B) and approx. +- 5 pct. (BZX79-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V. Low-power voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages. The diodes are available in the normalized E24 +- 2 pct. (BZX79-B) and approx. +- 5 pct. (BZX79-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. Low-power general purpose voltage regulator diodes in a very small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. Low-power general purpose voltage regulator diodes in a very small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. NPN/PNP Resistor-Equipped double Transistor (RET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. PNP high-voltage transistor in a small SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. Medium-power voltage regulator diodes in small hermetically sealed leaded SOD66 (DO-41) glass packages. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Planar Schottky barrier double diode with an integrated guard ring for stress protection. Two electrically isolated Schottky barrier diodes, encapsulated in a small SOT143B Surface-Mounted Device (SMD) plastic package. NPN/PNP Resistor-Equipped Transistors (RET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD) plastic package. NPN Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP high-voltage transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes encapsulated in an ultra small SOD523 plastic SMD package. Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. PNP general-purpose transistors in a very small SOT323 (SC-70), Surface-Mounted Device (SMD) plastic package. NPN Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. PNP Resistor-Equipped Transistor (RET) family in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. NPN medium power transistor series in a small SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. Unidirectional double ElectroStatic Discharge (ESD) protection diodes in a common anode configuration, encapsulated in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. The device is designed for ESD and transient overvoltage protection of up to two signal lines. PNP switching transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. The BAS56 consists of two high-speed switching diodes fabricated in planar technology, and encapsulated in the small rectangular plastic SMD SOT143 package. The diodes are not connected. Low-power general purpose voltage regulator diodes in a very small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. General-purpose Schottky diode in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN low VCEsatBreakthrough in Smal Signal (BISS) transitor in a medium power SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. General-purpose Schottky diode in an ultra small SOD523 (SC-79) Surface-Mounted Device (SMD) flat lead plastic package. NPN Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. NPN low VCEsattransistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. PNP transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. NPN double transistor in a very small SOT363 (SC-88) plastic six lead package. Medium-power voltage regulator diodes in small hermetically sealed leaded SOD66 (DO-41) glass packages. NPN low VCEsattransistor in a small SOT23 plastic package. PNP complement: PBSS5160T-Q. NPN medium power transistor series in a small SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. General-purpose Schottky diode in a SOD323 (SC-76) very small Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. High-voltage switching diode in a very small SOD323F (SC-90) flat lead Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD) plasic package. Low-power voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages. The diodes are available in the normalized E24 +- 2 pct. (BZX79-B) and approx. +- 5 pct. (BZX79-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V. General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Three-terminal shunt regulator family with an output voltage range between Vref= 1.24 V and 14 V, to be set by two external resistors. Bidirectional ElectroStatic Discharge (ESD) protection diode in a very small SOD323 (SC-76) SMD plastic package designed to protect one signal line from the damage caused by ESD and other transients. Planar Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a very small and flat lead SOD323F Surface-Mounted Device (SMD) plastic package. NPN double transistor in an ultra small SOT666 flat lead plastic package. PNP high-voltage low VCEsattransistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. Low voltage regulator diodes in hermetically sealed SOD66 (DO-41) packages. NPN medium power transistors in a SOT223 (SC-73) flat lead Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD) plastic package. General-purpose dual Schottky diode in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Low voltage regulator diodes in hermetically sealed SOD66 (DO-41) packages. Low-power voltage regulator diodes in small hermetically sealed glass SOD80C Surface-Mounted Device (SMD) packages. The diodes are available in the normalized E24 ±2 % (BZV55-B) and approximately ±5 % (BZV55-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 V to 75 V. The 74AUP1G14 is a single inverter with Schmitt-trigger input. This device ensures very low static and dynamic power consumption across the entire VCCrange from 0.8 V to 3.6 V. This device is fully specified for partial power down applications using IOFF. The IOFFcircuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down. Logic level gate drive N-channel enhancement mode MOSFET in an LFPAK33 package. The NextPowerS3 portfolio, utilising Nexperia’s unique "SchottkyPlus" technology, delivers high efficiency and the low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like body diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies. The IP4220CZ6 is designed to protect I/O lines sensitive to capacitive load, such as USB 2.0, ethernet, Digital Video Interface (DVI) and so on, from damage due to ElectroStatic Discharge (ESD). It incorporates four pairs of ultra low capacitance rail-to-rail ESD protection diodes plus a Zener diode to provide protection to signal and supply components from ESD voltages up to ±8 kV contact discharge. Protection is supply voltage independent due to the rail-to-rail diodes being connected to the Zener diode. The device is encapsulated in a small 6-lead SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. Low-current voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. Trench Maximum Efficiency General Application (MEGA) Schottky barrier rectifier, encapsulated in a CFP15 (SOT1289) power and flat lead Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Low voltage regulator diodes in hermetically sealed SOD66 (DO-41) packages. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. NPN/PNP Resistor-Equipped double Transistors (RET) family in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Planar Schottky barrier rectifier with an integrated guard ring for stress protection encapsulated in small SOD123 Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. PNP general-purpose transistors in a small SOT23 (TO-236AB) or SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP general-purpose transistors in a small SOT23 (TO-236AB), Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOD323F (SC-90) very small and flat lead Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. This unidirectional ESD protection device is designed to protect high-speed interfaces such as SuperSpeed USB 3.2 at 10 Gbps, HDMI, DisplayPort, external Serial Advanced Technology Attachment (eSATA), Low Voltage Differential Signaling (LVDS), and Gigabit Multimedia Serial Link (GMSL) Serializer/Deserializer (SerDes) against ElectroStatic Discharge (ESD). Dual N-channel enhancement mode Field-Effect Transistor (FET) in a ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. The 74AUP1G19 is a 1-to-2 decoder/demultiplexer with a common output enable. This device buffers the data on input A and passes it to the outputs 1Y (true) and 2Y (complement) when the enable (E) input signal is LOW. A HIGHEcauses both outputs to assume a HIGH state. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD)plastic package. NPN low VCEsattransitor in a medium power SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. NPN medium power transistors in a medium power SOT223 (SC73) Surface-Mounted Device (SMD) plastic package. N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Low-power voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages. The diodes are available in the normalized E24 +- 2 pct. (BZX79-B) and approx. +- 5 pct. (BZX79-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages. The diodes are available in the normalized E24 +- 2 pct. (BZX79-B) and approx. +- 5 pct. (BZX79-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. NPN/NPN double Resistor-Equipped Transistor (RET) in a SOT363 (SC-88) very small Surface-Mounted Device (SMD) plastic package. Low-current voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. NPN general-purpose transistor in a medium power SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. PNP complement: BSR31. The 74AUP1G00 is a single 2-input NAND gate. Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise and fall times. This device ensures very low static and dynamic power consumption across the entire VCCrange from 0.8 V to 3.6 V. This device is fully specified for partial power down applications using IOFF. The IOFFcircuitry disables the output, preventing the damaging backflow current through the device when it is powered down. NPN Resistor-Equipped Transistor (RET) in a very small SOT23 Surface-Mounted Device (SMD) plastic package. LED driver consisting of resistor-equipped PNP transistor with two diodes on one chip in an SOT457 (SC-74) plastic package. NPN/PNP Resistor-Equipped double Transistors (RET) family in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP low VCEsattransistor in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. The 74AUP1G06 is a single inverter with open-drain output. Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise and fall times. The BAV74 consists of two high-speed switching diodes with common cathodes, fabricated in planar technology, and encapsulated in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP general-purpose transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. Planar Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. Low-current voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages. The diodes are available in the normalized E24 +- 2 pct. (BZX79-B) and approx. +- 5 pct. (BZX79-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V. NPN medium power transistors in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages. The diodes are available in the normalized E24 +- 2 pct. (BZX79-B) and approx. +- 5 pct. (BZX79-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V. Low-power voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages. The diodes are available in the normalized E24 +- 2 pct. (BZX79-B) and approx. +- 5 pct. (BZX79-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V. PNP Resistor-Equipped Transistor (RET) family in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD) plasic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. PNP low VCEsattransistor in a SOT457 (SC-74) plastic package. PNP medium power transistors in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Low-current voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. PNP Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages. The diodes are available in the normalized E24 +- 2 pct. (BZX79-B) and approx. +- 5 pct. (BZX79-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V. High-speed switching diode, encapsulated in a SOD323F (SC-90) very small and flat lead Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes encapsulated in an ultra small SOD523 plastic SMD package. General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes encapsulated in an ultra small SOD523 plastic SMD package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD) plasic package. General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD) plastic package. The 74AUP1G97 is a configurable multiple function gate with Schmitt-trigger inputs. The device can be configured as any of the following logic functions MUX, AND, OR, NAND, NOR, inverter and buffer; using the 3-bit input. All inputs can be connected directly to VCCor GND. This device ensures very low static and dynamic power consumption across the entire VCCrange from 0.8 V to 3.6 V. This device is fully specified for partial power down applications using IOFF. The IOFFcircuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down. Low-power general purpose voltage regulator diodes in a very small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. NPN/PNP general-purpose double transistor in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. PNP general-purpose transistor in a small SOT23 (TO-236AB) Surface-Mounted Device(SMD) plastic package. Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD323 (SC-76) very small Surface-Mounted Device (SMD) plastic package. NPN Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. General-purpose Schottky diode in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP general-purpose transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. The 74LVC2G34 is a dual buffer. Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of these devices as translators in mixed 3.3 V and 5 V environments. NPN Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. Low-current voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. NPN/PNP general-purpose double transistors in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in small hermetically sealed glass SOD80C Surface-Mounted Device (SMD) packages. The diodes are available in the normalized E24 ±2 % (BZV55-B) and approximately ±5 % (BZV55-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 V to 75 V. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. Planar Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a very small and flat lead SOD323F Surface-Mounted Device (SMD) plastic package. 400 W unidirectional Transient Voltage Suppressor (TVS) in a SOD123W small and flat lead low-profile Surface-Mounted Device (SMD) plastic package, designed for transient overvoltage protection. Planar Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a small SOD123 Surface-Mounted Device (SMD) plastic package. PNP general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Medium-power voltage regulator diodes in small hermetically sealed leaded SOD66 (DO-41) glass packages. Fivefold ElectroStatic Discharge (ESD) protection diode arrays in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package designed to protect up to five signal lines from the damage caused by ESD and other transients. Low-power voltage regulator diodes in small hermetically sealed glass SOD80C Surface-Mounted Device (SMD) packages. The diodes are available in the normalized E24 ±2 % (BZV55-B) and approximately ±5 % (BZV55-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 V to 75 V. NPN transistor in a SOT323 plastic package. Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia's unique "SchottkyPlus" technology delivers high efficiency, low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies. NPN/NPN Resistor-Equipped double Transistor (RET) family in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. Triple high-voltage switching diodes, encapsulated in a SOT457 (SC-74/TSOP6) small Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD) plasic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. General-purpose dual Schottky diode in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP medium power transistors in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. NPN medium power transistors in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package Unidirectional double ElectroStatic Discharge (ESD) protection diode in a common anode configuration, encapsulated in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. The device is designed for ESD and transient overvoltage protection of up to two signal lines. N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Low-current voltage regulator diodes in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN/NPN double Resistor-Equipped Transistor (RET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package. N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. NPN medium power transistors in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. The 74AUP2G04 is a dual inverter. Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise and fall times. This device ensures very low static and dynamic power consumption across the entire VCCrange from 0.8 V to 3.6 V. This device is fully specified for partial power down applications using IOFF. The IOFFcircuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down. NPN medium power transistors in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. Ultra low capacitance double rail-to-rail ElectroStatic Discharge (ESD) protection diode in a small SOT143B Surface-Mounted Device (SMD) plastic package. Unidirectional ElectroStatic Discharge (ESD) protection diodes in a very small SOD323 Surface-Mounted Device (SMD) plastic package designed to protect one signal line from the damage caused by ESD and transient overvoltage. PNP Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. Medium-power voltage regulator diodes in small hermetically sealed leaded SOD66 (DO-41) glass packages. NPN/NPN matched double transistors in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. PNP Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP BISS (Breakthrough In Small Signal) transistor in a SOT23 plastic package. NPN complement: PMMT491A. Single high-speed switching diodes, fabricated in planar technology, and encapsulated in small hermetically sealed glass SOD80C Surface-Mounted Device (SMD) packages. High-speed switching diode, encapsulated in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in small hermetically sealed glass SOD80C Surface-Mounted Device (SMD) packages. The diodes are available in the normalized E24 ±2 % (BZV55-B) and approximately ±5 % (BZV55-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 V to 75 V. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN switching transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP/PNP matched double transistor in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. 250 A logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia’s unique "SchottkyPlus" technology delivers high efficiency, low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies. NPN Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. NPN general-purpose transistor in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages. PNP medium power transistors in a SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. NPN/PNP general-purpose double transistor in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. Unidirectional double ElectroStatic Discharge (ESD) protection diode in a common anode configuration, encapsulated in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. The device is designed for ESD and transient overvoltage protection of up to two signal lines. NPN transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP general-purpose transistors in a small SOT23 (TO-236AB), Surface-Mounted Device (SMD) plastic package. NPN/NPN double Resistor-Equipped Transistor (RET) in a SOT363 (SC-88) very small Surface-Mounted Device (SMD) plastic package. NPN/NPN Resistor-Equipped Transistor (RET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. Low-power general purpose voltage regulator diodes in a very small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection encapsulated in small SOD123 Surface-Mounted Device (SMD) plastic package.