IR MOSFET™ P-CHANNEL MOSFET ; DPAK TO-252 PACKAGE; 105 MOHM;
| Part | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Mounting Type | Package / Case | Supplier Device Package | Technology | FET Type | Power Dissipation (Max) | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 4.5 V 10 V | 105 mOhm | Surface Mount | DPAK (2 Leads + Tab) SC-63 TO-252-3 | PG-TO252-3 | MOSFET (Metal Oxide) | P-Channel | 79 W | 20 V | 20 A | -40 C | 175 °C | 55 V | 1 V | 660 pF |