IC NVSRAM 16MBIT PARALLEL 36EDIP
Part | Memory Organization | Access Time | Memory Format | Memory Interface | Memory Size | Operating Temperature [Max] | Operating Temperature [Min] | Write Cycle Time - Word, Page [custom] | Write Cycle Time - Word, Page [custom] | Mounting Type | Package / Case | Package / Case | Technology | Voltage - Supply [Min] | Voltage - Supply [Max] | Supplier Device Package | Memory Type |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Analog Devices Inc./Maxim Integrated DS1270Y-100# | 2 M | 100 ns | NVSRAM | Parallel | 16 Mb | 70 °C | 0 °C | 100 ns | 100 ns | Through Hole | 36-DIP Module | 0.61 ", 15.49 mm | NVSRAM (Non-Volatile SRAM) | 4.5 V | 5.5 V | 36-EDIP | Non-Volatile |
Analog Devices Inc./Maxim Integrated DS1270Y-70IND# | 2 M | 70 ns | NVSRAM | Parallel | 16 Mb | 85 °C | -40 °C | Through Hole | 36-DIP Module | 0.61 ", 15.49 mm | NVSRAM (Non-Volatile SRAM) | 4.5 V | 5.5 V | 36-EDIP | Non-Volatile | ||
Analog Devices Inc./Maxim Integrated DS1270Y-100 | 2 M | 100 ns | NVSRAM | Parallel | 16 Mb | 70 °C | 0 °C | 100 ns | 100 ns | Through Hole | 36-DIP Module | 0.61 ", 15.49 mm | NVSRAM (Non-Volatile SRAM) | 4.5 V | 5.5 V | 36-EDIP | Non-Volatile |
Analog Devices Inc./Maxim Integrated DS1270Y-70 | 2 M | 70 ns | NVSRAM | Parallel | 16 Mb | 70 °C | 0 °C | Through Hole | 36-DIP Module | 0.61 ", 15.49 mm | NVSRAM (Non-Volatile SRAM) | 4.5 V | 5.5 V | 36-EDIP | Non-Volatile | ||
Analog Devices Inc./Maxim Integrated DS1270Y-70IND | 2 M | 70 ns | NVSRAM | Parallel | 16 Mb | 85 °C | -40 °C | Through Hole | 36-DIP Module | 0.61 ", 15.49 mm | NVSRAM (Non-Volatile SRAM) | 4.5 V | 5.5 V | 36-EDIP | Non-Volatile | ||
Analog Devices Inc./Maxim Integrated DS1270Y-70# | 2 M | 70 ns | NVSRAM | Parallel | 16 Mb | 70 °C | 0 °C | Through Hole | 36-DIP Module | 0.61 ", 15.49 mm | NVSRAM (Non-Volatile SRAM) | 4.5 V | 5.5 V | 36-EDIP | Non-Volatile |