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20 V, N-channel Trench MOSFET
Description
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N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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20 V, N-channel Trench MOSFET
20 V, N-channel Trench MOSFET
| Part | Current - Continuous Drain (Id) (Ta) | Package Name | Technology | Grade | Rds On (Max) | Power Dissipation (Max) | Operating Temperature (Min) | Operating Temperature (Max) | FET Type | Gate Charge (Max) | Vgs(th) (Max) | Vgs (Max) | Package / Case | Drain to Source Voltage (Vdss) | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Qualification | Input Capacitance (Ciss) (Max) | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 2.8 A | TO-236AB | MOSFET (Metal Oxide) | Automotive | 73 mOhm | 940 mW | -55 °C | 150 °C | N-Channel | 6 nC | 1 V | 8 V | SC-59 SOT-23-3 TO-236-3 | 20 V | 4.5 V | 1.8 V | AEC-Q101 | 291 pF | Surface Mount |