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60 V, dual N-channel Trench MOSFET
Description
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Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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60 V, dual N-channel Trench MOSFET
60 V, dual N-channel Trench MOSFET
| Part | Mounting Type | Qualification | Operating Temperature (Max) | Operating Temperature (Min) | Current - Continuous Drain (Id) (Ta) | Package / Case | Technology | Channel Count | Configuration | Grade | Drain to Source Voltage (Vdss) | Package Name | Input Capacitance (Ciss) (Max) | Rds On (Max) | Vgs(th) (Max) | Power - Max (Ta) | Power - Max (Tc) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | Surface Mount | AEC-Q101 | 175 °C | -55 °C | 220 mA | 6-TSSOP SC-88 SOT-363 | MOSFET (Metal Oxide) | 2 | N-Channel | Automotive | 60 V | 6-TSSOP | 9.2 pF | 3 Ohm | 2.6 V | 270 mW | 1.3 W |