Catalog
30 V, P-channel Trench MOSFET
Description
AI
P-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Beta
⌘K
30 V, P-channel Trench MOSFET
30 V, P-channel Trench MOSFET
| Part | Vgs (Max) | Vgs(th) (Max) | Power Dissipation (Max) | Rds On (Max) | Gate Charge (Max) | Technology | Current - Continuous Drain (Id) (Ta) | Current - Continuous Drain (Id) (Tc) | Input Capacitance (Ciss) (Max) | Operating Temperature (Min) | Operating Temperature (Max) | Mounting Type | FET Type | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Package / Case | Package Name | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 25 V | 2 V | 1.7 W 16 W | 15.8 mOhm | 36.9 nC | MOSFET (Metal Oxide) | 8 A | 24.7 A | 1200 pF | -55 °C | 150 °C | Surface Mount | P-Channel | 10 V | 4.5 V | 8-PowerVDFN | MLPAK33 | 30 V |